An interconnection structure of a semiconductor chip may include an interconnection via, a lower pad, a conductive bump, and an upper pad. The interconnection via may be arranged in the semiconductor chip. The lower pad may be arranged on a lower end of the interconnection via exposed through a lower surface of the semiconductor chip. The conductive bump may be arranged on the lower pad. The upper pad may be arranged on an upper end of the interconnection via exposed through an upper surface of the semiconductor chip. The upper pad may have a width wider than a width of the interconnection via and narrower than a width of the lower pad. Thus, an electrical short between the conductive bumps may not be generated in the interconnection structure having a thin thickness.

Methods for fabricating packages with dummy dies having a construction that mimics warpage of the other components included in the package are described. A method for fabricating a package with a floor plan having sections for placement of components includes arranging a first component in a first section of the floor plan and arranging a second component in a second section of the floor plan, where each of the first component and the second component comprises active circuitry for providing at least one of compute, storage, or communication functionality. The method further includes forming a dummy die having a construction that mimics warpage of at least one of the first component or the second component. The method further includes arranging the dummy die in an unoccupied section of the floor plan for the package.

A semiconductor device having a package on package (PoP) structure, in which a fine pitch between package substrates is implemented, a total height of a package is reduced, and reliability is enhanced. The semiconductor package includes a first package substrate including a first body layer and a first passivation layer, a first semiconductor chip on the first package substrate, a second package substrate on the first package substrate, the second package substrate including a second body layer and a second passivation layer, a first connection member on the first package substrate outside the first semiconductor chip, and a gap filler filled between the first package substrate and the second package substrate, wherein the first package substrate includes a first trench, the second package substrate includes a second trench, and the first semiconductor chip is disposed between the first trench and the second trench.

An example microelectronic device package includes: a leadframe having leads extending from an exterior portion to an interior portion and having lead pads at an end of the interior portion, the lead pads having a first thickness that is less than the a second thickness of the leads; a multilayer package substrate including conductors spaced from one another by dielectric material, a board side surface of the multilayer package substrate mounted to the leadframe by solder joints on the lead pads; at least two semiconductor dies mounted to a device side surface of the multilayer package substrate opposite the board side surface; mold compound covering the multilayer package substrate, the at least two semiconductor dies, the lead pads, and the interior portions of the leads, the exterior portions of the leads free from the mold compound; and the exterior portions of the leads forming terminals for the microelectronic device package.

In examples, semiconductor package comprises a semiconductor die having a device side including circuitry; a sensor on the device side; a metal ring on the device side to at least partially define a cavity vertically aligned with the sensor, with the metal ring having a top metal ring surface facing away from the semiconductor die and an exterior metal ring surface facing away from the sensor; and a metal pillar on the device side and having a top metal pillar surface facing away from the semiconductor die. The package also comprises a tie bar extending approximately parallel to the device side of the semiconductor die and coupled with solder to the top metal ring surface, with the tie bar exposed to a first exterior surface of the package. The package comprises a conductive member including a conductive terminal exposed to a second exterior surface of the package, a vertical member coupled to the conductive terminal and extending toward the first exterior surface of the package, and a horizontal member coupled to the vertical member, with the horizontal member soldered to the top metal pillar surface. The package comprises a mold compound contacting the exterior metal ring surface, with the mold compound absent from the cavity.

A processing core includes a multi-core processor integrated directly onto a high bandwidth, high-capacity memory. The processor may for example be a large graphics processing unit (GPU) or artificial intelligence (AI) processor. The memory may include a non-volatile memory and a volatile memory. The non-volatile memory may comprise a CBA (CMOS bonded to array) memory tile having a single large NAND memory tile coupled together with a CMOS logic circuit tile. The volatile memory may comprise one or more DRAM memory tiles or the like. The processing core may further include stacks of high bandwidth memory (HBM) semiconductor dies affixed to the interposer around one or more sides of the processor, the one or more volatile memory tiles and CBA memory tile.

The present disclosure provides an electronic device. The electronic device includes an electronic component configured to laterally receive a power and configured to non-laterally transmit a signal. The electronic component includes an integrated circuit layer configured to receive the power.

A computer-implemented method for preventing body biasing attacks can include providing a stacked silicon die. The method can also include providing an oxide layer on a back side of the stacked silicon die, wherein the oxide layer restricts voltage glitches from reaching a power subsystem of the stacked silicon die. The method can further include permanently attaching a carrier to the oxide layer. Various other methods, systems, and computer-readable media are also disclosed.

According to one embodiment, a semiconductor device includes: a first conductive layer provided on a substrate; a second conductive layer provided on the substrate and to which a first voltage is supplied; a third conductive layer corresponding to an output node and provided on the substrate between the first conductive layer and the second conductive layer; a first switching device provided above the first conductive layer and including a first terminal to which a second voltage higher than the first voltage is supplied and a second terminal connected to the third conductive layer; and a second switching device provided above the second conductive layer and including a third terminal connected to the third conductive layer and a fourth terminal connected to the second conductive layer.