Disclosed embodiments include an integrated circuit (IC) comprising a silicon wafer, first and second conductive lines on the silicon wafer. There are first, second and third insulation blocks with portions on the first and second conductive lines and the silicon wafer, a metal pillar on the surface of the first conductive line opposite the silicon wafer, and a conductive adhesive block on the surface of the second conductive line opposite the silicon wafer. The IC also has a lead frame having first and second leads, and a capacitor having first and second capacitor terminals in which the first capacitor terminal is connected to the second lead using conductive adhesive, the second capacitor terminal is connected to the second conductive line through the conductive adhesive block, and the first lead is coupled to the first conductive line.

In one example, a semiconductor device includes a substrate having leads that include lead terminals, lead steps, and lead offsets extending between the lead steps so that at least some lead steps reside on different planes. A first electronic component is coupled to a first lead step side and includes a first electronic component first side, and a first electronic component second side opposite to the first electronic component first side. A second electronic component is coupled to a second lead step side, and includes a second electronic component first side, and a second electronic component second side opposite to the second electronic component first side. An encapsulant encapsulates the first electronic component, the second electronic component, and portions of the substrate. The lead terminals are exposed from a first side of the encapsulant. Other examples and related methods are also disclosed herein.

An electronic package is formed by disposing an electronic element and a lead frame having a plurality of conductive posts on a carrier structure having an antenna function, and encapsulating the electronic element and the lead frame with an encapsulant. The encapsulant is defined with a first encapsulating portion and a second encapsulating portion lower than the first encapsulating portion. The electronic element is positioned in the first encapsulating portion, and the plurality of conductive posts are positioned in the second encapsulating portion. End surfaces of the plurality of conductive posts are exposed from a surface of the second encapsulating portion so as to be electrically connected to a connector.

In some examples, a semiconductor package comprises a semiconductor die; a conductive member coupled to the semiconductor die; and a wirebonded protrusion coupled to the conductive member. A physical structure of the wirebonded protrusion is determined at least in part by a sequence of movements of a wirebonding capillary used to form the wirebonded protrusion, the wirebonded protrusion including a ball bond and a bond wire, and the bond wire having a proximal end coupled to the ball bond. The bond wire has a distal end. The package also comprises a mold compound covering the semiconductor die, the conductive member, and the wirebonded protrusion. The distal end is in a common vertical plane with the ball bond and is not connected to a structure other than the mold compound.

A method includes forming a solder layer on a surface of one or more chips. A lid is positioned over the solder layer on each of the one or more chips. Heat and pressure are applied to melt the solder layer and attach each lid to a corresponding solder layer. The solder layer has a thermal conductivity of ≥50 W/mK.

A method includes forming a solder layer on a surface of one or more chips. A lid is positioned over the solder layer on each of the one or more chips. Heat and pressure are applied to melt the solder layer and attach each lid to a corresponding solder layer. The solder layer has a thermal conductivity of ≥50 W/mK.

In a described example, an apparatus includes: a package substrate having a die mount surface; semiconductor die flip chip mounted to the package substrate on the die mount surface, the semiconductor die having post connects having proximate ends on bond pads on an active surface of the semiconductor die, and extending to distal ends away from the active surface of the semiconductor die and connected to the package substrate by solder joints; a thermal interposer comprising a thermally conductive material positioned over and in thermal contact with a backside surface of the semiconductor die; and mold compound covering a portion of the package substrate, a portion of the thermal interposer, the semiconductor die, and the post connects, the thermal interposer having a surface exposed from the mold compound.

A semiconductor chip that includes a chip body that has a first side surface, a second side surface, a third side surface, and a fourth side surface; a central region at a central portion of the chip body; and a peripheral region at a peripheral portion of the chip body and adjacent to at least one of the first side surface to the fourth side surface, wherein the peripheral region includes a first unit region that includes a plurality of first bumps of a first bump density, and a second unit region that includes a plurality of second bumps of a second bump density higher than the first bump density.

A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a substrate, a semiconductor device, an encapsulant, a balance structure, and a warpage-resistant layer. The semiconductor device is disposed on the substrate. The encapsulant encapsulates the semiconductor device. The balance structure is on the semiconductor device and contacting the encapsulant. The warpage-resistant layer is between the semiconductor device and the balance structure. The encapsulant contacts a lateral surface of the warpage-resistant layer.

A microelectronic device has bump bond structures on input/output (I/O) pads. The bump bond structures include copper-containing pillars, a barrier layer including cobalt and zinc on the copper-containing pillars, and tin-containing solder on the barrier layer. The barrier layer includes 0.1 weight percent to 50 weight percent cobalt and an amount of zinc equivalent to a layer of pure zinc 0.05 microns to 0.5 microns thick. A lead frame has a copper-containing member with a similar barrier layer in an area for a solder joint. Methods of forming the microelectronic device are disclosed.