A wiring board with a built-in electronic component includes a substrate having cavity, an insulating layer formed on the substrate such that the insulating layer is covering the cavity, a conductor layer formed on the insulating layer, and an electronic component accommodated in the cavity and including a rectangular cuboid body and terminal electrodes such that each electrode has a metal film form formed on outer surface of the body, and via conductors formed in the insulating layer such that the via conductors are connecting the conductor layer and electrodes. The electrodes are arrayed in a matrix having rows and columns such that adjacent electrodes in row and column directions have the opposite polarities, and the conductor layer includes a line pattern shunting first group of the electrodes in one polarity and a solid pattern shunting second group of the electrodes in the other polarity.

In some general aspects, an apparatus may include a first semiconductor die, a second semiconductor die, and a capacitive isolation circuit being coupled to the first semiconductor die and the second semiconductor die. The capacitive isolation circuit may be disposed outside of the first semiconductor die and the second semiconductor die. The first semiconductor die, the second semiconductor die, and the capacitive circuit may be included in a molding of a semiconductor package.

An antenna that is formed of a conductor pattern is disposed on a dielectric substrate. A high-frequency semiconductor device that supplies a high-frequency signal to the antenna is mounted on the bottom surface of the dielectric substrate. A plurality of conductor columns project from the bottom surface. The conductor columns are embedded in a dielectric member that is disposed on the bottom surface. An end of each of the conductor columns is exposed through the dielectric member. The dielectric member defines a mounting surface that faces a mounting substrate. A step is formed in a side surface of a composite structure that includes the dielectric substrate and the dielectric member, and a side surface extending from the mounting surface to the step is more recessed than a side surface that is located above the step.

Embodiments of the invention include a microelectronic device and methods of forming a microelectronic device. In an embodiment the microelectronic device includes a semiconductor die and an inductor that is electrically coupled to the semiconductor die. The inductor may include one or more conductive coils that extend away from a surface of the semiconductor die. In an embodiment each conductive coils may include a plurality of traces. For example, a first trace and a third trace may be formed over a first dielectric layer and a second trace may be formed over a second dielectric layer and over a core. A first via through the second dielectric layer may couple the first trace to the second trace, and a second via through the second dielectric layer may couple the second trace to the third trace.

A redistribution circuit structure electrically connected to at least one conductor underneath is provided. The redistribution circuit structure includes a dielectric layer, an alignment, and a redistribution conductive layer. The dielectric layer covers the conductor and includes at least one contact opening for exposing the conductor. The alignment mark is disposed on the dielectric layer. The alignment mark includes a base portion on the dielectric layer and a protruding portion on the base portion, wherein a ratio of a maximum thickness of the protruding portion to a thickness of the base portion is smaller than 25%. The redistribution conductive layer is disposed on the dielectric layer. The redistribution conductive layer includes a conductive via, and the conductive via is electrically connected to the conductor through the contact opening. A method of fabricating the redistribution circuit structure and an integrated fan-out package are also provided.

A capacitance structure includes a first input terminal configured to input a first input signal, a first output terminal configured to output the first output signal, a second input terminal configured to input a second input signal, a second output terminal configured to output a second output signal, and a plurality of trench cells. Each of the plurality of trench cells includes a first electrode and a second electrode. The first electrodes of the plurality of trenches are interconnected to form a first electrode of the capacitor structure, the second electrodes of the plurality of trench cells are interconnected to form a second electrode of the capacitor structure, the first electrode of the capacitor structure is connected to the first input signal, and the second electrode of the capacitor structure is connected to the input second signal.

A semiconductor device is provided with: a semiconductor integrated circuit having a bump mounting surface; and a thin-film capacitor portion connected to the bump mounting surface via a bump. The semiconductor integrated circuit includes a first power supply pad, and a second power supply pad. The thin-film capacitor portion includes a first electrode layer connected to the first power supply pad, a second electrode layer connected to the second power supply pad, and a dielectric layer formed between the first electrode layer and the second electrode layer. The semiconductor device is provided with an electric power supply path configured to supply electric power to the semiconductor integrated circuit, and a thin plate-shaped metal resistor portion provided in the electric power supply path and made from a metal based high-resistance material having a volume resistivity higher than a volume resistivity of the first electrode layer and the second electrode layer.

A packaged electronic system having a support formed by an insulating organic substrate housing a buried conductive region that is floating. A first die is fixed to the support and carries, on a first main surface, a first die contact region capacitively coupled to a first portion of the buried conductive region. A second die is fixed to the support and carries, on a first main surface, a second die contact region capacitively coupled to a second portion of the buried conductive region. A packaging mass encloses the first die, the second die, the first die contact region, the second die contact region, and, at least partially, the support.

A method for fabricating a thin-film integrated circuit, IC, including a plurality of electronic components, the method comprising: forming, using a first fabrication technique, the plurality of electronic components, and forming, using a second fabrication technique, a conductive layer on the plurality of electronic components to form a redistribution layer, RDL, wherein the first fabrication technique includes photolithographic patterning, and the first fabrication technique is different to the second fabrication technique.

A semiconductor device includes a first die, a second die on the first die, and a third die on the second die, the second die being interposed between the first die and the third die. The first die includes a first substrate and a first interconnect structure on an active side of the first substrate. The second die includes a second substrate, a second interconnect structure on a backside of the second substrate, and a power distribution network (PDN) structure on the second interconnect structure such that the second interconnect structure is interposed between the PDN structure and the second substrate.