A semiconductor device assembly has a first substrate, a second substrate, and an anisotropic conductive film. The first substrate includes a first plurality of connectors. The second substrate includes a second plurality of connectors. The anisotropic conductive film is positioned between the first plurality of connectors and the second plurality of connectors. The anisotropic conductive film has an electrically insulative material and a plurality of interconnects laterally separated by the electrically insulative material. The plurality of interconnects forms electrically conductive channels extending from the first plurality of connectors to the second plurality of connectors. A method includes connecting the plurality of interconnects to the first plurality of connectors and the second plurality of connectors, such that the electrically conductive channels are operable to conduct electricity from the first substrate to the second substrate. The method may include passing electrical current through the plurality of interconnects.

A semiconductor device has a semiconductor element provided with a functional surface on which a functional circuit is formed and with a back surface facing in the opposite direction to the functional surface, while also having a lead supporting the semiconductor element and electrically connected to the semiconductor element, and a resin package covering at least a portion of the semiconductor element and the lead. The semiconductor element has a functional surface side electrode formed on the functional surface and equipped with a functional surface side raised part that projects in the direction in which the functional surface faces. The functional surface side raised part of the functional surface side electrode is joined to the lead by solid state bonding.

Provided is a multilayer substrate obtained by laminating semiconductor substrates each having a trough electrode. The multilayer substrate has excellent conduction characteristics and can be manufactured at low cost. Conductive particles are each selectively present at a position where the through electrodes face each other as viewed in a plan view of the multilayer substrate. The multilayer substrate has a connection structure in which the facing through electrodes are connected by the conductive particles, and the semiconductor substrates each having the through electrode are bonded by an insulating adhesive.

Semiconductor die assemblies having interconnect structures with redundant electrical connectors are disclosed herein. In one embodiment, a semiconductor die assembly includes a first semiconductor die, a second semiconductor die, and an interconnect structure between the first and the second semiconductor dies. The interconnect structure includes a first conductive film coupled to the first semiconductor die and a second conductive film coupled to the second semiconductor die. The interconnect structure further includes a plurality of redundant electrical connectors extending between the first and second conductive films and electrically coupled to one another via the first conductive film.

Structures and methods are disclosed for fabricating optoelectronic solid state array devices. In one case a backplane and array of micro devices is aligned and connected through bumps.

A transistor amplifier includes a semiconductor layer structure comprising first and second major surfaces and a plurality of unit cell transistors on the first major surface that are electrically connected in parallel, each unit cell transistor comprising a gate finger coupled to a gate manifold, a drain finger coupled to a drain manifold, and a source finger. The semiconductor layer structure is free of a via to the source fingers on the second major surface.

A multi-chip package includes a substrate having a plurality of first bump structures. A pitch between first bump structures of the plurality of first bump structures is uniform across a surface of the substrate. The multi-chip package includes a first chip bonded to the substrate and a second chip bonded to the substrate. The first chip includes a plurality of second bump structures, and the plurality of second bump structures are bonded to a first set of first bump structures of the plurality of first bump structures. The second chip includes a plurality of third bump structures, and the plurality of third bump structures are bonded to a second set of first bump structures of the plurality of first bump structures. A pitch between second bump structures of the plurality of second bump structures is different from a pitch between third bump structures of the plurality of third bump structures.

The present disclosure relates to bonding structures useful in semiconductor packages. In an embodiment, a semiconductor device includes a semiconductor element, two pillar structures, and an insulation layer. The semiconductor element has a surface and includes at least one bonding pad disposed adjacent to the surface. The two pillar structures are disposed on a single bonding pad. The insulation layer is disposed adjacent to the surface of the semiconductor element. The insulation layer defines an opening, the opening exposes a portion of the single bonding pad, and the two pillar structures are disposed in the opening.

A clip-bonded semiconductor chip package comprises a lead frame having a pad and a lead; a semiconductor chip bonded onto the pad of the lead frame; a bonding pad on the semiconductor chip; metal bumps formed on the bonding pad; a clip having first and second portions coupled to each other wherein the first portion is bonded to the bonding pad via the metal bumps, wherein the second portion is bonded to the lead of the lead frame; and a package body made of a molding material around the lead frame, the semiconductor chip and the clip.

A semiconductor device has a semiconductor element provided with a functional surface on which a functional circuit is formed and with a back surface facing in the opposite direction to the functional surface, while also having a lead supporting the semiconductor element and electrically connected to the semiconductor element, and a resin package covering at least a portion of the semiconductor element and the lead. The semiconductor element has a functional surface side electrode formed on the functional surface and equipped with a functional surface side raised part that projects in the direction in which the functional surface faces. The functional surface side raised part of the functional surface side electrode is joined to the lead by solid state bonding.