Semiconductor die assemblies having interconnect structures with redundant electrical connectors are disclosed herein. In one embodiment, a semiconductor die assembly includes a first semiconductor die, a second semiconductor die, and an interconnect structure between the first and the second semiconductor dies. The interconnect structure includes a first conductive film coupled to the first semiconductor die and a second conductive film coupled to the second semiconductor die. The interconnect structure further includes a plurality of redundant electrical connectors extending between the first and second conductive films and electrically coupled to one another via the first conductive film.

An electronic device with stud bumps is disclosed. In an embodiment an electronic device includes a carrier board having an upper surface and an electronic chip mounted on the upper surface, the electronic chip having a mounting side facing the upper surface of the carrier board, a top side facing away from the upper surface, and sidewalls connecting the mounting side to the top side, wherein the electronic chip has equal to or less than 5 stud bumps per square millimeter of a base area of the mounting side, wherein the carrier board has at least one recess in the upper surface, and wherein at least one of the stud bumps reaches into the recess.

Embodiments include semiconductor packages and methods to form the semiconductor packages. A semiconductor package includes a plurality of first dies on a substrate, an interface layer over the first dies, a backside metallization (BSM) layer directly on the interface layer, where the BSM layer includes first, second, and third conductive layer, and a heat spreader over the BSM layer. The first conductive layer includes a titanium material. The second conductive layer includes a nickel-vanadium material. The third conductive layer includes a gold material, a silver material, or a copper material. The copper material may include copper bumps. The semiconductor package may include a plurality of second dies on a package substrate. The substrate may be on the package substrate. The second dies may have top surfaces substantially coplanar to top surface of the first dies. The BSM and interface layers may be respectively over the first and second dies.

Semiconductor die assemblies having interconnect structures with redundant electrical connectors are disclosed herein. In one embodiment, a semiconductor die assembly includes a first semiconductor die, a second semiconductor die, and an interconnect structure between the first and the second semiconductor dies. The interconnect structure includes a first conductive film coupled to the first semiconductor die and a second conductive film coupled to the second semiconductor die. The interconnect structure further includes a plurality of redundant electrical connectors extending between the first and second conductive films and electrically coupled to one another via the first conductive film.

A semiconductor device and an amplifier assembly implementing the semiconductor device are disclosed. The semiconductor device, which is a type of Doherty amplifier, includes first transistor elements for a carrier amplifier of the Doherty amplifier and second transistor elements for a peak amplifier. A feature of the Doherty amplifier is that the first transistor elements and the second transistor elements are disposed alternatively on a common semiconductor substrate.

The present disclosure provides a driving substrate and a manufacturing method thereof, and a micro LED bonding method. The driving substrate includes: a base substrate; a driving function layer provided on the base substrate, and including a plurality of driving thin film transistors and a plurality of common electrode lines; a pad layer including a plurality of pads provided on a side of the driving function layer away from the base substrate, each pad including a pad body and a microstructure of hard conductive material provided on a side of the pad body away from the base substrate; and a plurality of buffer structures provided on the side of the driving function layer away from the base substrate, each buffer structure surrounding a portion of a corresponding microstructure close to the base substrate, and a height of the buffer structure being lower than a height of the microstructure.

An electronic device is disclosed. In an embodiment an electronic device includes a carrier board having an upper surface and an electronic chip mounted on the upper surface of the carrier board, the electronic chip having a mounting side facing the upper surface of the carrier board, a top side facing away from the upper surface of the carrier board, and sidewalls connecting the mounting side to the top side, wherein the electronic chip has equal to or less than 5 stud bumps per square millimeter of a base area of the mounting side, and wherein a laminated polymer hood at least partly covers the top side of the electronic chip and extends onto the upper surface of the carrier board.

A capacitor that includes a first capacitor layer having a first substrate provided with a first trench structure having a trench, a first electrode, and a second electrode provided in a region of the first trench structure that includes a trench, and a second capacitor layer having a second substrate, a third electrode, and a fourth electrode. Moreover, the first capacitor layer and the second capacitor layer are disposed such that the second electrode and the third electrode oppose each other and are electrically connected.

A semiconductor device and an amplifier assembly implementing the semiconductor device are disclosed. The semiconductor device, which is a type of Doherty amplifier, includes first transistor elements for a carrier amplifier of the Doherty amplifier and second transistor elements for a peak amplifier. A feature of the Doherty amplifier is that the first transistor elements and the second transistor elements are disposed alternatively on a common semiconductor substrate.

A package structure includes a first encapsulation member, a second encapsulation member, at least one semiconductor chip, a plurality of metal pins and a second insulation layer. The first encapsulation member includes a first metal layer, a first insulation layer and a second metal layer. The at least one semiconductor chip is disposed between the first encapsulation member and the second encapsulation member. The at least one semiconductor chip comprises a plurality of conductive terminals connected with the first metal layer or a third metal layer. The plurality of metal pins are disposed between and extended outward from the first encapsulation member and the second encapsulation member. The second insulation layer is disposed between the first encapsulation member and the second encapsulation layer for securing the first encapsulation member, the second encapsulation member, the at least one semiconductor chip, and the plurality of metal pins.