Disclosed is a semiconductor package structure comprising a body, a plurality of first-layer, second-layer, third-layer and fourth-layer electrical contacts, wherein the first-layer, the second-layer, the third-layer and the fourth-layer electrical contacts are arranged sequentially from outside to inside on a bottom surface of the body in a matrix manner. Adjacent first-layer electrical contacts have two different spacings therein, and adjacent third-layer electrical contacts have the two different spacings therein.

A die and a substrate are provided. The die comprises at least one integrated circuit chip, and the substrate comprises first and second subsets of conductive pillars extending at least partially therethrough. Each of the first subset of conductive pillars comprises a protrusion bump pad protruding from a surface of the substrate, and the second subset of conductive pillars each partially form a trace recessed within the surface of the substrate. The die is coupled to the substrate via a plurality of conductive bumps each extending between one of the protrusion bump pads and the die.

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate including a plurality of conductive traces and a recess filled with a conductive material electrically coupled to at least one of the plurality of conductive traces. The semiconductor structure also includes semiconductor chip. The semiconductor chip includes a plurality of conductive pads correspondingly electrically connected with the plurality of conductive traces through a plurality of conductive bumps. A height of each of the plurality of conductive bumps is determined by a minimum distance between the plurality of conductive pads and the corresponding conductive traces thereof.

Disclosed is a semiconductor package structure comprising a body, a plurality of first-layer, second-layer, third-layer and fourth-layer electrical contacts, wherein the first-layer, the second-layer, the third-layer and the fourth-layer electrical contacts are arranged sequentially from outside, to inside on a bottom surface of the body in a matrix manner. Adjacent first-layer electrical contacts have two different spacings therein, and adjacent third-layer electrical contacts have the two different spacings therein.

A semiconductor package comprising a package substrate that has a recessed portion on a top surface thereof, a lower semiconductor chip in the recessed portion of the package substrate, an upper semiconductor chip on the lower semiconductor chip and the package substrate and having a width greater than that of the lower semiconductor chip, a plurality of first bumps directly between the package substrate and the upper semiconductor chip, and a plurality of second bumps directly between the lower semiconductor chip and the upper semiconductor chip. A pitch of the second bumps is less than that of the first bumps.

Disclosed is a semiconductor package comprising a first semiconductor chip and at least one second semiconductor chip on the first semiconductor chip. The second semiconductor chip includes first and second test bumps that are adjacent to an edge of the second semiconductor chip and are on a bottom surface of the second semiconductor chip. The first and second test bumps are adjacent to each other. The second semiconductor chip also includes a plurality of data bumps that are adjacent to a center of the second semiconductor chip and are on the bottom surface of the second semiconductor chip. A first interval between the second test bump and one of the data bumps is greater than a second interval between the first test bump and the second test bump. The one of the data bumps is most adjacent to the second test bump.

A multilayer substrate includes a flexible element assembly including a principal surface, a first to an n-th external electrode disposed on the principal surface, and at least one first dummy conductor disposed inside the element assembly in a floating state. When the element assembly is viewed from a normal direction of the principal surface, a distance between an m-th external electrode and a nearest external electrode therefrom among the first to the n-th external electrodes is defined as a distance Dm, an average of distances D1 to Dn is defined as an average Dave, and an area within a circle having a center on the m-th external electrode and having a radius of Dm is defined as an area Am. The first dummy conductor is located in at least one area Am having a radius of Dm greater than the average Dave when viewed from the normal direction.

A power module includes a base plate, first, second, and third semiconductor chips. At least one of a third edge or fourth edge of the first semiconductor chip is disposed adjacent to a side end of the base plate. Among a half of a distance from a first edge of the first semiconductor chip to one edge of the second semiconductor chip, a half of a distance from a second edge of the first semiconductor chip to one edge of the third semiconductor chip, and a distance from the third edge or fourth edge of the first semiconductor chip disposed adjacent to the side end of the base plate to the side end of the base plate, a length of a solder fillet formed on the edge of the first semiconductor chip at the shortest distance is formed in the shortest length.

A semiconductor package may include vertically-stacked semiconductor chips and first, second, and third connection terminals connecting the semiconductor chips to each other. Each of the semiconductor chips may include a semiconductor substrate, an interconnection layer on the semiconductor substrate, penetration electrodes connected to the interconnection layer through the semiconductor substrate, and first, second, and third groups on the interconnection layer. The interconnection layer may include an insulating layer and first and second metal layers in the insulating layer. The first and second groups may be in contact with the second metal layer, and the third group may be spaced apart from the second metal layer. Each of the first and third groups may include pads connected to a corresponding one of the first and third connection terminals in a many-to-one manner. The second group may include pads connected to the second connection terminal in a one-to-one manner.

Disclosed is a semiconductor package structure comprising a body, a plurality of first-layer, second-layer, third-layer and fourth-layer electrical contacts, wherein the first-layer, the second-layer, the third-layer and the fourth-layer electrical contacts are arranged sequentially from outside to inside on a bottom surface of the body in a matrix manner. Adjacent first-layer electrical contacts have two different spacings therein, and adjacent third-layer electrical contacts have the two different spacings therein.