An electrical contact upon an interposer and/or upon a processing device includes a minor axis and a major axis. The contact is positioned such that the major axis is generally aligned with the direction of expansion of the interposer and/or the processing device. The electrical contact may further be positioned within a power/ground or input/output (I/O) region of the interposer and/or processing device. The electrical contact may further be positioned within a center region that is surrounded by a perimeter region of the interposer and/or the processing device. The dimensions or aspect ratios of major and minor axes of neighboring electrical contacts within an electrical contact grid may differ relative thereto. Further, the angle of respective major and minor axes of neighboring electrical contacts within the electrical contact grid may differ relative thereto.

A memory device including an interposer including a first plurality of paths and a second plurality of paths, a first memory die attached to a first surface of the interposer, the first memory die including a first physical layer connected to the first plurality of paths, the first physical layer being attached to a first surface of the interposer, and a second memory die attached to a second surface of the interposer, the second memory die including a second physical layer connected to the second plurality of paths, the second physical layer being attached to a second surface of the interposer, the second physical layer not interfering with the first physical layer in a plan view may be provided.

An electrical contact upon an interposer and/or upon a processing device includes a minor axis and a major axis. The contact is positioned such that the major axis is generally aligned with the direction of expansion of the interposer and/or the processing device. The electrical contact may further be positioned within a power/ground or input/output (I/O) region of the interposer and/or processing device. The electrical contact may further be positioned within a center region that is surrounded by a perimeter region of the interposer and/or the processing device. The dimensions or aspect ratios of major and minor axes of neighboring electrical contacts within an electrical contact grid may differ relative thereto. Further, the angle of respective major and minor axes of neighboring electrical contacts within the electrical contact grid may differ relative thereto.

Techniques and mechanisms for determining an accessibility of circuit functionality via interface structures of a microelectronic device. In an embodiment, a packaged microelectronic device includes a substrate having interconnect structures formed therein. The interconnect structures variously couple one or more integrated circuit (IC) dies of the packaged microelectronic device to respective conductors (or contact lands) at a side of the substrate. Access to some functionality of the one or more IC dies via certain ones the contact landsthe access during an operational mode of the packaged microelectronic devicemay be selectively disabled based on testing which evaluates performance characteristics of the packaged microelectronic device. In another embodiment, some of the contact lands are covered with an insulator material to prevent deposition of solder on such contact lands.

Alternative surfaces for conductive pad layers of silicon bridges for semiconductor packages, and the resulting silicon bridges and semiconductor packages, are described. In an example, a semiconductor structure includes a substrate having a lower insulating layer disposed thereon. The substrate has a perimeter. A metallization structure is disposed on the lower insulating layer. The metallization structure includes conductive routing disposed in a dielectric material stack. First and second pluralities of conductive pads are disposed in a plane above the metallization structure. Conductive routing of the metallization structure electrically connects the first plurality of conductive pads with the second plurality of conductive pads. An upper insulating layer is disposed on the first and second pluralities of conductive pads. The upper insulating layer has a perimeter substantially the same as the perimeter of the substrate.

A semiconductor device includes a semiconductor chip having a first surface and a second surface, the first surface facing a substrate, and the second surface being opposite to the first surface and being a circuit surface; a first bump connecting the first surface of the semiconductor chip and the substrate; and a metallic pillar connecting the first surface of the semiconductor chip and the substrate.

A semiconductor package is provided. The semiconductor package includes: a first stack including a first semiconductor substrate; a through via that penetrates the first semiconductor substrate in a first direction; a second stack that includes a second face facing a first face of the first stack, on the first stack; a first pad that is in contact with the through via, on the first face of the first stack; a second pad including a concave inner side face that defines an insertion recess, the second pad located on the second face of the second stack; and a bump that connects the first pad and the second pad, wherein the bump includes a first upper bump on the first pad, and a first lower bump between the first upper bump and the first pad.

Alternative surfaces for conductive pad layers of silicon bridges for semiconductor packages, and the resulting silicon bridges and semiconductor packages, are described. In an example, a semiconductor structure includes a substrate having a lower insulating layer disposed thereon. The substrate has a perimeter. A metallization structure is disposed on the lower insulating layer. The metallization structure includes conductive routing disposed in a dielectric material stack. First and second pluralities of conductive pads are disposed in a plane above the metallization structure. Conductive routing of the metallization structure electrically connects the first plurality of conductive pads with the second plurality of conductive pads. An upper insulating layer is disposed on the first and second pluralities of conductive pads. The upper insulating layer has a perimeter substantially the same as the perimeter of the substrate.

A method for fabricating a semiconductor package may include: providing a first stack including a first pad; forming a lower bump including a first metal on the first pad; forming an upper bump including a second metal different from the first metal on the lower bump, wherein a Young's modulus of the second metal is lower than a Young's modulus of the first metal, and a melting point of the second metal is 400 degrees Celsius or higher; providing a second stack including a second pad, wherein the second pad includes a concave inner face defining an insertion recess; and bonding the first stack and the second stack by inserting the upper bump into the insertion recess of the second pad.

A semiconductor package may include an interconnection structure in which at least one insulating layer and at least one interconnection layer are alternately stacked, a semiconductor chip including a plurality of pads, the semiconductor chip at least partially overlapping with the interconnection structure in the vertical direction, a plurality of bumps between the plurality of pads and the interconnection structure, a peripheral pad portion at least a portion of which on a side surface of the semiconductor chip and electrically connected to the semiconductor chip by a surface thereof that opposing the semiconductor chip, and a peripheral connection portion electrically connecting the peripheral pad portion and the interconnection structure to each other.