Described are semiconductor interposer, and microelectronic device assemblies incorporating such semiconductor interposers. The described interposers include multiple redistribution structures on each side of the core; each of which may include multiple individual redistribution layers. The interposers may optionally include circuit elements, such as passive and/or active circuit. The circuit elements may be formed at least partially within the semiconductor core.

A three-dimensional structure in which a wiring is provided on a surface is provided. At least a part of the surface of the three-dimensional structure includes an insulating layer containing filler. A recessed gutter for wiring is provided on the surface of the three-dimensional structure, and at least a part of a wiring conductor is embedded in the recessed gutter for wiring.

A solder connection may be surrounded by a solder locking layer (1210, 2210) and may be recessed in a hole (1230) in that layer. The recess may be obtained by evaporating a vaporizable portion (1250) of the solder connection. Other features are also provided.

Embodiments describe a display integration scheme in which an array of pixel driver chips embedded front side up in an insulator layer. A front side redistribution layer (RDL) spans across and is in electrical connection with the front sides of the array of pixel driver chips, and an array of light emitting diodes (LEDs) is bonded to the front side RDL. The pixel driver chips may be located directly beneath the display area of the display panel.

A semiconductor chip for measuring a magnetic field. The semiconductor chip comprises a magnetic sensing element, and an electronic circuit. The magnetic sensing element is mounted on the electronic circuit. The magnetic sensing element is electrically connected with the electronic circuit. The electronic circuit is produced in a first technology and/or first material and the magnetic sensing element is produced in a second technology and/or second material different from the first technology/material.

A stacked chip package structure includes a first chip, stud bumps, a second chip, pillar bumps, an encapsulant and conductive vias. The first stud bumps are respectively disposed on a plurality of first pads of the first chip, wherein each first stud bump includes a rough surface, and the rough surface of each first stud bump is rougher than a top surface of each first pad. The second chip is disposed on the first chip and exposes the first pads. The pillar bumps are respectively disposed on a plurality of second pads of the second chips. The encapsulant encapsulates the first chip and the second chip and exposes a top surface of each second stud bump. The first conductive vias penetrate the encapsulant and connect the first stud bumps. Each first conductive via covers the rough surface of each first stud bump.

A packaging structure including first, second, and third dies, an encapsulant, a circuit structure, and a filler is provided. The encapsulant covers the first die. The circuit structure is disposed on the encapsulant. The second die is disposed on the circuit structure and is electrically connected to the circuit structure. The third die is disposed on the circuit structure and is electrically connected to the circuit structure. The third die has an optical signal transmission area. The filler is disposed between the second die and the circuit structure and between the third die and the circuit structure. A groove is present on an upper surface of the circuit structure. The upper surface includes first and second areas located on opposite sides of the groove. The filler directly contacts the first area. The filler is away from the second area. A manufacturing method of a packaging structure is also provided.

A chip package and a method for forming the same are provided. The method includes: providing a first chip, wherein the first chip comprises a first surface and a second surface, and a first plurality of pads are disposed on the first surface; providing a second chip, wherein the second chip comprises a third surface and a fourth surface, a second plurality of pads are disposed on the third surface; combining the second surface of the first chip and the third surface of the second chip, wherein the second plurality of pads are out of the combination area of the first chip and the second chip; and forming a first insulation layer, wherein the first insulation layer covers the first chip, and is combined with the second chip. Processes of the method are simple, and the chip package is small.

A semiconductor package including a mounting board, a first semiconductor chip on the mounting board, the first semiconductor chip having a first peripheral area, a second peripheral area, and a central area between the first and second peripheral areas, the central area having penetrating electrodes formed therein, a second semiconductor chip on the first peripheral area, the second semiconductor chip including a second pad on a top surface thereof, a third semiconductor chip on the second peripheral area, the third semiconductor chip including a third pad on a top surface thereof, and conductive wirings extending from the second and third pads, respectively, the conductive wirings electrically connected to the penetrating electrodes, respectively, may be provided.

Semiconductor device packages may include a first semiconductor device over a substrate and a second semiconductor device over the first semiconductor device. An active surface of the second semiconductor device may face away from the substrate. Conductors may extend from bond pads of the second semiconductor device, along surfaces of the second semiconductor device, first semiconductor device, and substrate to pads of routing members of the substrate. The conductors may be in contact with the bond pads and the routing members and a dielectric material interposed between the conductors and the first semiconductor device and between the conductors and the second semiconductor device. An encapsulant distinct from the dielectric material may cover the conductors, the first semiconductor device, the second semiconductor device, and an upper surface of the substrate. Methods of fabrication are also disclosed.