A method for manufacturing an embedded chip package is provided. The method may include: forming electrically conductive lines over a substrate; placing the substrate next to a chip arrangement comprising a chip, the chip comprising one or more contact pads, wherein one or more of the electrically conductive lines are arranged proximate to a side wall of the chip; and forming one or more electrical interconnects over the chip arrangement to electrically connect at least one electrically conductive line to at least one contact pad.

Disclosed is a microelectronic device assembly comprising a substrate having conductors exposed on a surface thereof. Two or more microelectronic devices are stacked on the substrate and the components are connected with conductive material in preformed holes in dielectric material in the bond lines aligned with TSVs of the devices and the exposed conductors of the substrate. Methods of fabrication are also disclosed.

The present disclosure relates to the field of integrated circuit package design and, more particularly, to packages using a bumpless build-up layer (BBUL) designs. Embodiments of the present description relate to the field of fabricating microelectronic packages, wherein an interposer, such as a through-silicon via interposer, may be used in a bumpless build-up layer package to facilitate stacked microelectronic components.

A semiconductor arrangement includes top and bottom contact plates, a plurality of chip assemblies, a dielectric embedding compound, and a control electrode interconnection structure. Each chip assembly has a semiconductor chip having a semiconductor body. The semiconductor body has a top side and an opposing underside. The top side is spaced apart from the underside in a vertical direction. Each semiconductor chip has a top main electrode arranged on the top side, a bottom main electrode arranged on the underside, a control electrode arranged at the top side, and an electrically conductive top compensation die, arranged on the side of the top main electrode facing away from the semiconductor body and cohesively and electrically conductively connected to the top main electrode by means of a top connecting layer. An electric current between the top main electrode and the bottom main electrode can be controlled by means of the control electrode.

The invention relates to a simple to produce electric component for chips with sensitive component structures. Said component comprises a connection structure and a switching structure on the underside of the chip and a support substrate with at least one polymer layer.

Among other things, an inductor comprising a conductive trace and a method for forming the inductor are provided. The inductor comprises a magnetic structure, such as a ferrite core. A molding material, such as a dielectric, is formed around the magnetic structure. A conductive trace, comprising one or more conductive pillars interconnected by one or more upper interconnects and one or more lower interconnects, is formed around the magnetic structure to form the inductor. The conductive trace allows physical limitations associated with winding a wire to be avoided, and thus allows the inductor to be smaller than wire wound inductors. In one example, the inductor is formed within an integrated circuit package comprising an active device, such as an integrated circuit. In this way, the inductor can be connected to the integrated circuit within the integrated circuit package.

A method for making an electronic component package from an encapsulated panel. The encapsulated panel includes two packaging substrate assembles including electronic components. Access sides of the electronic components face outward from the encapsulated panel. Standoffs separate the packaging substrate assemblies from each other.

The present disclosure provides a power module, a chip-embedded package module and a manufacturing method of the chip-embedded package module. The chip-embedded package module includes: a chip having a first surface and a second surface that are disposed oppositely; a first plastic member including a first cover portion and a first protrusion; and a second plastic member including a second cover portion and a second protrusion. A height difference discontinuous interface structure is formed between the top surface of the second protrusion and the second surface of the chip, which cuts off a passage for expansion of delamination at an edge position of the chip, thereby effectively suppressing generation of the delamination.

In one example, an electronic device includes a substrate comprising a substrate top side, a substrate bottom side, and outward terminals. An electronic component is connected to the outward terminals. External interconnects are connected to the outward terminals and include a first external interconnect connected to a first outward terminal. A lower shield is adjacent to the substrate bottom side and is laterally between the external interconnects. The lower shield is electrically isolated from the first external interconnect by one or more of 1) a dielectric buffer interposed between the lower shield and the first external interconnect; or 2) the lower shield including a first part and a second part, the first part being laterally separated from the second part by a first gap, wherein the first part laterally surrounds lateral sides of the first external interconnect; and the second part is vertically interposed between the first outward terminal and the first external interconnect. Other examples and related methods are also disclosed herein.

A method of manufacturing a semiconductor device is provided. The method includes forming an assembly including placing a semiconductor die and a launcher structure on a carrier substrate, encapsulating at least a portion of the semiconductor die and the launcher structure, and applying a redistribution layer on a surface of the semiconductor die and a surface of the launcher structure to connect a bond pad of the semiconductor die with an antenna launcher of the launcher structure. The assembly is attached to a substrate and a waveguide overlapping the assembly is attached to the substrate. The waveguide structure is physically decoupled from the assembly.