A method for forming a redistribution structure in a semiconductor package and a semiconductor package including the redistribution structure are disclosed. In an embodiment, the method may include encapsulating an integrated circuit die and a through via in a molding compound, the integrated circuit die having a die connector; depositing a first dielectric layer over the molding compound; patterning a first opening through the first dielectric layer exposing the die connector of the integrated circuit die; planarizing the first dielectric layer; depositing a first seed layer over the first dielectric layer and in the first opening; and plating a first conductive via extending through the first dielectric layer on the first seed layer.

A semiconductor package is provided. The semiconductor package comprising a first redistribution structure comprising a first redistribution pattern; a first semiconductor chip on the first redistribution structure, the first semiconductor chip comprising a semiconductor substrate comprising a first surface and a second surface, a first back end of line (BEOL) structure on the first surface of the semiconductor substrate and comprising a first interconnect pattern, and a second BEOL structure on the second surface of the semiconductor substrate and comprising a second interconnect pattern; a molding layer covering a sidewall of the first semiconductor chip; a second redistribution structure on the first semiconductor chip and the molding layer and comprising a second redistribution pattern electrically connected to the second interconnect pattern.

A stacked chip package structure includes a first chip, pillar bumps, a first encapsulant, a first redistribution layer, a second chip, a second encapsulant, a second redistribution layer and a through via. The pillar bumps are disposed on a plurality of first pads of the first chip respectively. The first encapsulant encapsulates the first chip and exposes the pillar bumps. The first redistribution layer is disposed on the first encapsulant and electrically connects the first chip. The second chip is disposed on the first redistribution layer. The second encapsulant encapsulates the second chip. The second redistribution layer is disposed on the second encapsulant and electrically coupled to the second chip. The through via penetrates the second encapsulant and electrically connects the first redistribution layer and the second redistribution layer.

In some embodiments, an interconnect electrical connects a light emitter to wiring on a substrate. The interconnect may be deposited by 3D printing and lays flat on the light emitter and substrate. In some embodiments, the interconnect has a generally rectangular or oval cross-sectional profile and extends above the light emitter to a height of about 50 μm or less, or about 35 μm or less. This small height allows close spacing between an overlying optical structure and the light emitter, thereby providing high efficiency in the injection of light from the light emitter into the optical structure, such as a light pipe.

Generally discussed herein are systems and apparatuses that include a dense interconnect bridge and techniques for making the same. According to an example a technique can include creating a multidie substrate, printing an interconnect bridge on the multidie substrate, electrically coupling a first die to a second die by coupling the first and second dies through the interconnect bridge.

A semiconductor package is provided. The semiconductor package comprising a first redistribution structure comprising a first redistribution pattern; a first semiconductor chip on the first redistribution structure, the first semiconductor chip comprising a semiconductor substrate comprising a first surface and a second surface, a first back end of line (BEOL) structure on the first surface of the semiconductor substrate and comprising a first interconnect pattern, and a second BEOL structure on the second surface of the semiconductor substrate and comprising a second interconnect pattern; a molding layer covering a sidewall of the first semiconductor chip; a second redistribution structure on the first semiconductor chip and the molding layer and comprising a second redistribution pattern electrically connected to the second interconnect pattern.

The present disclosure provides a power module, a chip-embedded package module and a manufacturing method of the chip-embedded package module. The chip-embedded package module includes: a chip having a first surface and a second surface that are disposed oppositely; a first plastic member including a first cover portion and a first protrusion; and a second plastic member including a second cover portion and a second protrusion. A height difference discontinuous interface structure is formed between the top surface of the second protrusion and the second surface of the chip, which cuts off a passage for expansion of delamination at an edge position of the chip, thereby effectively suppressing generation of the delamination.

A via wiring formation substrate for mounting at least one semiconductor chip, the substrate including a support substrate, a releasable adhesive layer provided on the support substrate, a first insulating layer provided on the releasable adhesive layer, and a second insulating layer laminated on the first insulating layer, wherein the first insulating layer and the second insulating layer are provided with a via wiring formation via, the via wiring formation via enabling formation of via wirings which respectively correspond to a plurality of connection terminals of the semiconductor chip and which respectively connect the plurality of connection terminals, such that the via wiring formation via penetrates only through the first insulating layer and the second insulating layer without misalignment.

In an embodiment, a structure includes: a graphics processor device; a passive device coupled to the graphics processor device, the passive device being directly face-to-face bonded to the graphics processor device; a shared memory device coupled to the graphics processor device, the shared memory device being directly face-to-face bonded to the graphics processor device; a central processor device coupled to the shared memory device, the central processor device being directly back-to-back bonded to the shared memory device, the central processor device and the graphics processor device each having active devices of a smaller technology node than the shared memory device; and a redistribution structure coupled to the central processor device, the shared memory device, the passive device, and the graphics processor device.

The present disclosure provides a method for manufacturing a semiconductor structure. The method includes providing an underlying semiconductor layer; depositing an insulation layer over the underlying semiconductor layer; forming a first through semiconductor via extending continuously through the insulation layer; forming a second through semiconductor via extending continuously through the insulation layer; etching a portion of the insulation layer to expose a first upper end of the first through semiconductor via above the insulation layer and a second upper end of the second through semiconductor via above the insulation layer; and forming an upper conductive connecting portion laterally connected to a first upper lateral surface of the first upper end and a second upper lateral surface of the second upper end by a self-aligned deposition process.