A system, method, and silicon chip package for providing connections between a die of a silicon chip package and external leads of the silicon chip package is disclosed. The connections are formed using a pre-mold etched with a trace pattern. The trace pattern provides rigid traces that connect the die with the external leads.

A package is described for a radio frequency die that has a backside conductive plate. One example includes a conductive plate, a semiconductor die having a front side and a back side, the back side being attached to the plate, a radio frequency component attached to the plate, a dielectric filled cavity in the plate adjacent to the radio frequency component, and a redistribution layer attached to the front side of the die for external connection.

Methods are provided for forming an IC power package including a power MOSFET device, a microprocessor/driver, and/or other discrete electronics. A lead frame may be etched to form a half-etch lead frame defining component attach structures at the top side of the lead frame. A power MOSFET may be mounted to a die attach pad defined in the half-etch lead frame, and the structure may be overmolded. The top of the overmolded structure may be grinded to reduce a thickness of the power MOSFET and expose a top surface of the MOSFET through the surrounding mold compound. A conductive contact may be formed on a top surface of the MOSFET. Selected portions of the half-etch lead frame may be etched from the bottom-up to separate the MOSFET from other package components, and to define a plurality of package posts for solder-mounting the package to a PCB.

A multi-chip module (MCM) includes a molded body portion having a first outer surface and a second outer surface. A conductive layer defines at least a portion of the first outer surface A conductive connection layer portion is disposed outside of the second outer surface of the molded body portion. A first semiconductor die and a second semiconductor die are disposed between the conductive layer and the conductive connection layer, and first molding portion is disposed between the first semiconductor die and the second semiconductor die. The first molding portion extends between the first outer surface and the second outer surface of the molded body portion. A conductive pillar is electrically coupled to the conductive layer defining at least a portion of the first outer surface and the conductive connection layer portion disposed outside of the second outer surface.

Implementations of a semiconductor package may include two or more die, each of the two more die coupled to a metal layer at a drain of each of the two more die, the two or more die and each metal layer arranged in two parallel planes; a first interconnect layer coupled at a source of each of the two more die; a second interconnect layer coupled to a gate of each of the two or more die and to a gate package contact through one or more vias; and an encapsulant that encapsulates the two or more die and at least a portion of the first interconnect layer, each metal layer, and the second interconnect layer.

A switch circuit package module includes a semiconductor switch unit and a capacitor unit. The semiconductor switch unit includes a first semiconductor switch element and a second semiconductor switch element. The first semiconductor switch element includes sub micro-switch elements, each sub micro-switch element configured with a drain electrode and a source electrode. The second semiconductor switch element includes sub micro-switch elements, each sub micro-switch element configured with a drain electrode and a source electrode. The capacitor unit includes a plurality of capacitors. The semiconductor switch unit includes a plurality of common electrodes, each common electrode connects the source electrode of one sub micro-switch element in the first semiconductor switch element with the drain of one sub micro-switch element in the second semiconductor switch element and is disposed adjacent to at least one drain electrode from the first semiconductor switch element or one source electrode from the second semiconductor switch element.

A semiconductor device package includes a metal carrier, a passive device, a conductive adhesive material, a dielectric layer and a conductive via. The metal carrier has a first conductive pad and a second conductive pad spaced apart from the first conductive pad. The first conductive pad and the second conductive pad define a space therebetween. The passive device is disposed on top surfaces of first conductive pad and the second conductive pad. The conductive adhesive material electrically connects a first conductive contact and a second conductive contact of the passive device to the first conductive pad and the second conductive pad respectively. The dielectric layer covers the metal carrier and the passive device and exposes a bottom surface of the first conductive pad and the second conductive pad. The conductive via extends within the dielectric layer and is electrically connected to the first conductive pad and/or the second conductive pad.

A method of manufacturing semiconductor devices such as integrated circuits comprises: providing one or more semiconductor chips having first and second opposed surfaces, coupling the semiconductor chip or chips with a support substrate with the second surface towards the support substrate, embedding the semiconductor chip or chips coupled with the support substrate in electrically-insulating packaging material by providing in the packaging material electrically-conductive passageways. The electrically-conductive passageways comprise: electrically-conductive chip passageways towards the first surface of the at least one semiconductor chip, and/or electrically-conductive substrate passageways towards the support substrate.

A nitride semiconductor device includes a semiconductor carrier, a first nitride-based chip, and first conformal connecting structures. The first nitride-based chip is disposed over the semiconductor carrier. The semiconductor carrier has a first planar surface. The first nitride-based chip has a second planar surface, first conductive pads, and first slanted surfaces. The first conductive pads are disposed in the second planar surface. The first slanted surfaces connect the second planar surface to the first planar surface. The first conformal connecting structures are disposed on the first planar surface and the first nitride-based chip. First obtuse angles are formed between the second planar surface and the first slanted surfaces. Each of the first conformal connecting structures covers one of the first slanted surfaces of the first nitride-based chip and one of the first obtuse angles and is electrically connected to the first conductive pads.

A method produces a plurality of optoelectronic modules, and includes: A) providing a metallic carrier assembly with a plurality of carrier units; B) applying a logic chip, each having at least one integrated circuit, to the carrier units; C) applying emitter regions that generate radiation, which can be individually electrically controlled; D) covering the emitter regions and the logic chips with a protective material; E) overmolding the emitter regions and the logic chips so that a cast body is formed, which joins the carrier units, the logic chips and the emitter regions to one another; F) removing the protective material and applying electrical conductor paths to the upper sides of the logic chips and to a cast body upper side; and G) dividing the carrier assembly into the modules.