H01L2224/24265

INTEGRATED DEVICE PACKAGES WITH PASSIVE DEVICE ASSEMBLIES
20200185346 · 2020-06-11 ·

An integrated device package is disclosed. The package can include a package substrate and an integrated device die having active electronic circuitry. The integrated device die can have a first side and a second side opposite the first side. The first side can have bond pads electrically connected to the package substrate by way of bonding wires. A redistribution layer (RDL) stack can be disposed on a the first side of the integrated device die. The RDL stack can comprise an insulating layer and a conductive redistribution layer. The package can include a passive electronic device assembly mounted and electrically connected to the RDL stack.

Integrated Circuit Package and Method

In an embodiment, a device includes: an integrated circuit die; an encapsulant at least partially encapsulating the integrated circuit die; a redistribution structure on the encapsulant, the redistribution structure being electrically connect to the integrated circuit die, the redistribution structure including a pad; a passive device including a conductive connector physically and electrically connected to the pad; and a protective structure disposed between the passive device and the redistribution structure, the protective structure surrounding the conductive connector, the protective structure including an epoxy flux, the protective structure having a void disposed therein.

SEMICONDUCTOR PACKAGE
20200176391 · 2020-06-04 ·

A semiconductor package comprising: a frame having an opening and including wiring layers and one or more layer of connection vias; a semiconductor chip disposed in the opening and having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface; an encapsulant covering the frame and the semiconductor chip and filling the opening; a connection structure disposed on the frame and the active surface of the semiconductor chip, and including one or more redistribution layers electrically connected to the connection pads and the wiring layers; one or more passive components disposed on the connection structure; a molding material covering each of the passive components; and a metal layer covering outer surfaces of each of the frame, the connection structure, and the molding material. The metal layer is connected to a ground pattern included in the wiring layers of the frame.

SEMICONDUCTOR PACKAGE STRUCTURE AND SEMICONDUCTOR MANUFACTURING PROCESS

A semiconductor package structure includes a semiconductor die, at least one wiring structure, a metal support, a passive element, a plurality of signal vias, and a plurality of thermal structures. The semiconductor die has an active surface. The at least one wiring structure is electrically connected to the active surface of the semiconductor die. The metal support is used for supporting the semiconductor die. The passive element is electrically connected to the semiconductor die. The signal vias are electrically connecting the passive element and the semiconductor die. The thermal structures are connected to the passive element, and the thermal structures are disposed on a periphery of the at least one wiring structure.

ANTENNA MODULE
20200144697 · 2020-05-07 ·

An antenna module includes a connection member including at least one wiring layer and at least one insulating layer; an integrated circuit (IC) disposed on a first surface of the connection member and electrically connected to at least one wiring layer; and an antenna package disposed on a second surface of the connection member, and including a dielectric layer, a plurality of antenna members, and a plurality of feed vias, wherein the antenna package further includes a chip antenna including a dielectric body and first and second electrodes, respectively disposed on first and second surfaces of the dielectric body, wherein the chip antenna is disposed to be spaced apart from the plurality of feed vias within the dielectric layer so that at least one of the first electrode or the second electrode is electrically connected to a corresponding wire of the at least one wiring layer.

SEMICONDUCTOR PACKAGE

A semiconductor package includes: a connection structure including a plurality of insulating layers and redistribution layers respectively disposed on the plurality of insulating layers; a semiconductor chip having connection pads connected to the redistribution layer; an encapsulant encapsulating the semiconductor chip; first and second pads arranged on at least one surface of the connection structure and each having a plurality of through-holes; a surface mount component disposed on the at least one surface of the connection structure and including first and second external electrodes positioned, respectively, in regions of the first and second pads; first and second connection vias arranged in the plurality of insulating layers and connecting the first and second pads to the redistribution layers, respectively; and first and second connection metals connecting the first and second pads and the first and second external electrodes to each other, respectively.

SEMICONDUCTOR PACKAGE
20200144237 · 2020-05-07 · ·

A semiconductor package includes a frame having a through-hole, a semiconductor chip disposed in the through-hole of the frame, and having an active surface on which a connection pad is disposed and an inactive surface opposite to the active surface, a thermoelectric device disposed on the inactive surface of the semiconductor chip, in the through-hole of the frame, and including a semiconductor layer and an electrode layer connected to the semiconductor layer, an encapsulant sealing at least portions of the semiconductor chip and the thermoelectric device, and a first connection structure disposed on the active surface of the semiconductor chip, and including a first redistribution layer electrically connected to the connection pad of the semiconductor chip.

SEMICONDCUTOR PACKAGE AND MANUFACTURING METHOD OF SEMICONDCUTOR PACKAGE

A semiconductor package includes an encapsulated semiconductor device, a first redistribution structure, an insulating layer, and an antenna. The encapsulated semiconductor device includes a semiconductor device encapsulated by an encapsulation material. The redistribution structure is disposed on a first side the encapsulated semiconductor device and electrically connected to the semiconductor device. The insulating layer is disposed on a second side of the encapsulated semiconductor device and comprises a groove pattern. The antenna is filled the groove pattern, wherein an upper surface of the antenna is substantially coplanar with an upper surface of the insulating layer.

Electronic component package and manufacturing method of the same

An electronic component package includes first and second wiring parts including insulating layers, conductive patterns formed in the insulating layers, and conductive vias penetrating through the insulating layers, to be connected to the conductive patterns, respectively; a frame disposed between the first and second wiring parts and having conductive connection parts electrically connecting one or more through-holes with the first and second wiring parts and an electronic component disposed to be surrounded by the through-hole, to thereby be connected to the first wiring part, wherein the conductive patterns formed to be adjacent to the electronic component among the conductive patterns of the first wiring part are embedded in the insulating layer of the first wiring part.

PACKAGE STRUCTURE AND METHOD OF MANUFACTURING THE SAME

A package structure and a method of forming the same are provided. The package structure includes a die, an encapsulant, a polymer layer and a redistribution layer. The encapsulant laterally encapsulates the die. The polymer layer is on the encapsulant and the die. The polymer layer includes an extending portion having a bottom surface lower than a top surface of the die. The redistribution layer penetrates through the polymer layer to connect to the die.