This semiconductor device includes: a heat dissipation plate formed in a plate shape; a plurality of switching elements joined to one surface of the heat dissipation plate; a first terminal extending in a direction away from the heat dissipation plate in a state of being apart from the heat dissipation plate, the first terminal being connected via a first electric conductor to surfaces of the plurality of switching elements on an opposite side to the heat dissipation plate side; and a sealing member sealing the plurality of switching elements, the heat dissipation plate, and the first terminal. A notch is provided in an outer periphery portion of the heat dissipation plate. A portion of the first terminal on the heat dissipation plate side overlaps with a region of a cut at the notch as seen in a direction perpendicular to the one surface of the heat dissipation plate.

A semiconductor module includes: a first power semiconductor element that includes a first main current electrode; a main body that accommodates therein the first power semiconductor element; and a first main current terminal connectable to the first main current electrode. The main body includes: a top face; a side face that connects to the top face; a bottom face fixable to a cooler; and a recessed portion that is on the side face, and accommodates therein an end portion of an insulating member. The first main current terminal protrudes from the side face of the main body, and includes: a first face; and a second face on an opposite side of the first face. The second face is closer to the bottom face than the first face on the side face. The recessed portion is on the side face between the bottom face and the second face, and is at a position apart from the bottom face.

A semiconductor device includes: a semiconductor element that includes an element main body having an element main surface facing one side in a thickness direction, and a first electrode arranged on the element main surface; a first insulating layer that is arranged over a peripheral edge portion of the first electrode and the element main surface and includes a first annular portion formed in an annular shape when viewed in the thickness direction; and a second insulating layer that is laminated on the first insulating layer, is made of a resin material, and includes a second annular portion overlapping with the first annular portion when viewed in the thickness direction.

A power semiconductor device including a first and second die, each including a plurality of conductive contact regions and a passivation region including a number of projecting dielectric regions and a number of windows. Adjacent windows are separated by a corresponding projecting dielectric region with each conductive contact region arranged within a corresponding window. A package of the surface mount type houses the first and second dice. The package includes a first bottom insulation multilayer and a second bottom insulation multilayer carrying, respectively, the first and second dice. A covering metal layer is arranged on top of the first and second dice and includes projecting metal regions extending into the windows to couple electrically with corresponding conductive contact regions. The covering metal layer moreover forms a number of cavities, which are interposed between the projecting metal regions so as to overlie corresponding projecting dielectric regions.

A semiconductor package includes a die pad, a semiconductor die mounted on the die pad and comprising a first terminal facing away from the die pad and a second terminal facing and electrically connected to the die pad, an interconnect clip electrically connected to the first terminal, an encapsulant body of electrically insulating material that encapsulates the semiconductor die and the interconnect clip, and a first opening in the encapsulant body that exposes a surface of the interconnect clip, the encapsulant body comprises a lower surface, an upper surface opposite from the lower surface, and a first outer edge side extending between the lower surface and the upper surface, and the first opening is laterally offset from the first outer edge side.

An electronic module has a first substrate 11, a first electronic element 13, a second electronic element 23, a second substrate 21, a first terminal part 110 provided on a side of the first substrate 11 and a second terminal part 120 provided on a side of the second substrate 21. The first terminal part 110 has a first surface direction extending part 114 and a first normal direction extending part 113 extending toward one side or the other side. The second terminal part 120 has a second surface direction extending part 124 and a second normal direction extending part 123 extending toward one side or the other side. The second surface direction extending part 124 is provided on one side of the first surface direction extending part 114, and the first surface direction extending part 114 and the second surface direction extending part 124 overlap one another in a surface direction.

A connecting strip of conductive elastic material having an arched shape having a concave side and a convex side. The connecting strip is fixed at the ends to a support carrying a die with the convex side facing the support. During bonding, the connecting strip undergoes elastic deformation and presses against the die, thus electrically connecting the at least one die to the support.

A semiconductor device includes metal connector plate having a first lower surface, facing an electrode of a semiconductor chip, a first end surface, a second end surface, and a second lower surface connecting the first end surface and the second end surface. In a first direction parallel to the semiconductor chip, an end surface of the electrode is located between the positions of the first end surface and the second end surface. A distance from the second lower surface to the electrode is greater than a distance from the first lower surface to the electrode. A joining component has a first portion between the first lower surface and the electrode and a second portion between the second lower surface and the electrode.

Various teachings of the present disclosure include a method for welding an attachment piece to a semiconductor metallization using laser welding. The method may include: arranging an attachment piece having a flat side with a thin point so the flat side faces the semiconductor metallization; and welding the flat side to the semiconductor metallization. The flat side rests against a flat side of the semiconductor metallization over an entire surface area of the flat side. The thin point is formed with a cup shape of the attachment piece. The cup shape is open in the direction away from the semiconductor metallization.

A semiconductor device is provided, including a seal portion; an electronic element within the seal portion; first, second, and third lead terminals; first and second connecting elements; and first and second conductive bonding agents, one end of the first connecting element having a protrusion downward and electrically connected to a control electrode of the electronic element with the first conductive bonding agent, a first side surface extending from the one end to the other end of the first connecting element is parallel to an extending direction along which the one end of the second connecting element extends, a wall portion being disposed on a top surface of the one end of the second lead terminal, and the wall portion being in contact with the other end of the first connecting element.