Patent classifications
H01L2224/37013
Packaged Electronic Device With Film Isolated Power Stack
A packaged electronic device includes a stacked configuration of a first semiconductor die in a first recess in a first side of a first conductive plate, a second semiconductor die in a second recess in a first side of a second conductive plate, a third conductive plate electrically coupled to a second side of the second semiconductor die, and a package structure that encloses the first semiconductor die, and the second semiconductor die, where the package structure includes a side that exposes a portion of a second side of the first conductive plate.
Semiconductor device
According to one embodiment, a semiconductor device includes a semiconductor chip, first and second conductive members, a first connection member, and a resin portion. The first conductive member includes first and second portions. The second portion is electrically connected to the semiconductor chip. A direction from the semiconductor chip toward the second portion is aligned with a first direction. A direction from the second portion toward the first portion is aligned with a second direction crossing the first direction. The second conductive member includes a third portion. The first connection member is provided between the first and third portion. The first connection member is conductive. The resin portion includes a first partial region. The first partial region is provided around the first and third portions, and the first connection member. The first portion has a first surface opposing the first connection member and including a recess and a protrusion.
Electronic module
An electronic module has a first substrate 11; a second substrate 21 provided in one side of the first substrate 11; and a chip module 100 provided between the first substrate 11 and the second substrate 21. The chip module 100 has an electronic element 13, 23 and a connecting body 60, 70, 80 electrically connected to the electronic element 13, 23. The electronic element 13, 23 extends along a first direction that is a thickness direction of the electronic module.
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND CORRESPONDING SEMICONDUCTOR DEVICE
A semiconductor device includes an electrically conductive clip arranged in a bridge-like position between a semiconductor integrated circuit chip and an electrically conductive pad of a leadframe. The electrically conductive clip is soldered to the semiconductor integrated circuit chip and to the electrically conductive pad via soldering material applied at coupling surfaces facing towards the semiconductor integrated circuit chip and the electrically conductive pad. Prior to soldering, the clip is immobilized in the desired bridge-like position via one of welding (such as laser welding) or gluing at dedicated immobilization areas.
Electronic module
An electronic module has a first substrate 11, a first electronic element 13 provided on one side of the first substrate 11, a first connection body 60 provided on one side of the first electronic element 13, a second electronic element 23 provided on one side of the first connection body 60, a second substrate 21 provided on one side of the second electronic element 23, and an abutment body 250 that abuts on a face on one side of the second electronic element 23 and is capable of imparting a force toward one side with respect to the second substrate 21.
Electronic module
An electronic module has a first electronic unit having a first substrate 11, a first conductor layer 12 provided on one side of the first substrate 11, and a first electronic element 13 provided on one side of the first conductor layer 12, a first connection body 60 provided on one side of the first electronic element 13, and a second electronic unit having a second electronic element 23 provided on one side of the first connection body 60. The first connection body 60 has a first head part 61 and a plurality of support parts 65 extending from the first head part 61. The electronic module is characterized by that the support part 65 abuts on the first substrate 11 or the first conductor layer 12.
SEMICONDUCTOR MODULE
A semiconductor module includes a semiconductor device having a gate runner extending in a first direction at an upper surface of the semiconductor device, and a metal wiring plate having a first bonding portion with a bonding surface to which the upper surface of the semiconductor device is bonded via a first bonding material. The first bonding portion has a plurality of first protrusions at the bonding surface. Each first protrusion protrudes toward the semiconductor device, and is provided in a position away from the gate runner by a first distance in a plan view of the semiconductor module.
SEMICONDUCTOR DEVICE
A semiconductor device includes: a first conductive plate having a first obverse face facing in a thickness direction; a second conductive plate located apart from the first conductive plate in a first direction crossing the thickness direction and having a second obverse face facing in the same direction as the first obverse face; semiconductor elements joined to the first obverse face; and a conductive member. The semiconductor elements each include an electrode opposite to the first obverse face. The conductive member includes a main body portion, first junction portions individually and electrically joined to the electrodes of the semiconductor elements, and a second junction portion electrically joined to the second obverse face. Moreover, the conductive member includes a first connection portion connecting the main body portion and the first junction portions, and a second connection portion connecting the main body portion and the second junction portion.
FLIP-STACK TYPE SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME
The present invention minimizes parasitic inductance at the time of packaging a semiconductor that requires high efficiency and high-speed switching driving. In implementing a semiconductor package composed of one or more switching devices and one or more diode devices, the present invention provides a flip-stack structure in which a switching device is mounted on an insulating substrate or a metal frame, a flat metal is bonded onto the switching device, and a diode device is flipped and stacked on the flat metal, and accordingly, the flat metal with a large area is used for connection between the devices and between the devices and the insulating substrate, thereby minimizing parasitic inductance generated at a time of semiconductor packaging and automating the entire process of the semiconductor packaging.
Electronic module with a groove and press hole on the surface of a conductor
An electronic module has a rear surface-exposed conductor 10, 20, 30 having a rear surface-exposed part 12, 22, 32 whose rear surface is exposed; an electronic element 15, 25 provided on a front surface of the rear surface-exposed conductor 10, 20, 30; and a connector 60 configure to connect the rear surface-exposed conductor 10, 20, 30 and the electronic element 15, 25 or two rear surface-exposed conductors 10, 20, 30 each other. A groove 150 is provided on the front surface of the rear surface-exposed conductor 10, 20, 30. The sealing part 90 is provided with a press hole or a press impression 110, 120, 130 used to press the rear surface-exposed conductor 10, 20, 30. In an in-plane direction, a center portion of the press hole or the press impression 110, 120, 130 is provided on the side opposite to the connector 60 or the electronic element 15, 25 with respect to the groove 150.