According to one embodiment, a semiconductor device includes a first semiconductor chip, a heat dissipation member provided on one surface of the first semiconductor chip and connected to the first semiconductor chip, and a sealing resin sealing the first semiconductor chip and the heat dissipation member. The heat dissipation member includes mutually interlaced metal fibers and a thermosetting resin.

The on-resistance of a semiconductor device is reduced. A package structure composing the semiconductor device includes a die pad, a plurality of leads, a first semiconductor chip having a power transistor and mounted on the die pad, and a second semiconductor chip including a control circuit for controlling the power transistor and mounted on the first semiconductor chip. Here, a source pad of the first semiconductor chip is electrically connected to a first lead and a seventh lead of the plurality of leads via a clip made of a material which is copper as a main component, and the width (and cross-sectional area) of the clip is larger than the width (and diameter) of a wire in plan view.

In a general aspect, a power module package includes a substrate that has a ceramic layer with a first primary surface and a second primary surface opposite the first primary surface. The substrate also includes a patterned metal layer disposed on the first primary surface. The package also includes a first plurality of semiconductor die disposed on a first portion of the patterned metal layer. The first plurality of semiconductor die are linearly arranged along a first axis. The package further includes a second plurality of semiconductor die disposed on a second portion of the patterned metal layer. The second plurality of semiconductor die are linearly arranged along a second axis parallel to the first axis.

A power package includes a power substrate; one or more power devices arranged on the power substrate; and a lead frame power interconnection having a lead frame first portion and a lead frame second portion.

A semiconductor device is provided. The semiconductor device may include a heat dissipation pad that is formed such that the upper surface is exposed to the outside of a molding portion, a first lead frame that is formed on the left side of the heat dissipation pad so as to be spaced apart from the heat dissipation pad and includes a first portion extending in an upward and downward direction and a second portion protruding in a right direction, second lead frames that are formed on the right side of the heat dissipation pad, a first connection part that is formed so as to be connected to both of the lower surface of the heat dissipation pad and the lower surface of the second portion of the first lead frame, a semiconductor chip that is formed on the lower surface of the heat dissipation pad, and a second connection part that connects the semiconductor chip and the second lead frames.

An embodiment liquid immersion-cooled power module includes an enclosure, an insulating liquid filling the enclosure, a substrate disposed inside the enclosure, the substrate having a plurality of cooling fins in thermal contact with the insulating liquid, and a chip on the substrate inside the enclosure. Another embodiment liquid immersion-cooled power module further includes a connection body electrically connecting the plurality of substrates to each other.

A package which comprises an electrically conductive chip carrier, a first chip comprising a first connection terminal, a second connection terminal located on the chip carrier and a control terminal, a second chip comprising a first connection terminal, a second connection terminal located on the chip carrier and a control terminal, wherein the first chip and the second chip are connected to form a half bridge having inlet terminals and an outlet terminal, and a clip having three connection sections connecting the second connection terminal of the first chip with the first connection terminal of the second chip and with the outlet terminal of the half bridge.

A semiconductor device includes a semiconductor element, leads, and an encapsulation resin covering a portion of each of the leads and the semiconductor element. Each of the leads includes an external connection portion projecting from a side surface of the encapsulation resin. The external connection portion of at least one of the leads has opposite ends in a width-wise direction that extends along the side surface of the encapsulation resin. The external connection portion includes two recesses arranged toward a center in the width-wise direction from the opposite ends. The two recesses extend from a distal surface toward the encapsulation resin. The opposite ends in the width-wise direction define an end connection part. The external connection portion includes a part between the two recesses defining a center connection part.

A connection member for connecting an electronic chip, wherein the connection member comprises a bulk body, and a coating at least partially coating the bulk body and comprising a material having higher electric and higher thermal conductivity than the bulk body, wherein a ratio between a thickness of the coating and a thickness of the bulk body is at least 0.0016 at at least a part of the connection member.

A semiconductor package includes: a substrate having a metallic surface; a semiconductor die metallurgically bonded to the metallic surface of the substrate by a first solder joint; and a solder wetting structure metallurgically welded to the metallic surface of the substrate outside a perimeter of the semiconductor die and adjacent to one or more side faces of the semiconductor die. Excess solder squeezed out from under the semiconductor die is metallurgically bonded to the solder wetting structure. Methods of producing the semiconductor package and solder wetting structure are also described.