An electronic module includes a semiconductor package including a semiconductor chip and an electrically insulating encapsulation body encapsulating the semiconductor chip, the encapsulation body completely covering a second main face and four side faces of the semiconductor chip, wherein a first main face of the semiconductor chip that is opposite the first main face is exposed from the encapsulation body, a heat spreader attached to the semiconductor package, the heat spreader completely covering the first main face of the semiconductor chip, and an electrically insulating layer disposed on the heat spreader remote from the semiconductor package. The electrically insulating layer is completely separated from the semiconductor chip.

A package comprising a chip carrier, an electronic chip on the chip carrier, a clip on the electronic chip, an encapsulant at least partially encapsulating the electronic chip, and an electrically conductive vertical connection structure provided separately from the clip and electrically connecting the chip carrier with the clip.

A packaging structure is provided, including a substrate, a first chip, a second chip, and a conductive unit. The substrate includes a metal carrier, a patterned insulation layer disposed on the metal carrier and partially covering the metal carrier, and a patterned conductive layer disposed on the patterned insulation layer. The first chip is disposed on the metal carrier not covered by the patterned insulation layer. The second chip is disposed on the patterned conductive layer and electrically connected to the first chip by the conductive unit.

A packaging structure is provided, including a substrate, a first chip, a second chip, and a conductive unit. The substrate includes a metal carrier, a patterned insulation layer disposed on the metal carrier and partially covering the metal carrier, and a patterned conductive layer disposed on the patterned insulation layer. The first chip is disposed on the metal carrier not covered by the patterned insulation layer. The second chip is disposed on the patterned conductive layer and electrically connected to the first chip by the conductive unit.

An electronic device comprising a first substrate, a second substrate, a first semiconductor chip comprising a transistor, comprising a first mounting surface bonded to the first substrate and comprising a second mounting surface bonded to the second substrate, and a second semiconductor chip comprising a first mounting surface bonded to the first substrate and comprising a second mounting surface bonded to the second substrate, wherein the first semiconductor chip comprises a via electrically coupling a first transistor terminal at its first mounting surface with a second transistor terminal at its second mounting surface.

A semiconductor package includes a leadframe having a clip foot portion, the clip foot portion having a first tie bar, a conductive clip situated over the leadframe, the conductive clip including a first lock fork having at least two prongs around the first tie bar so as to secure the conductive clip to the clip foot portion of the leadframe. The conductive clip includes a second lock fork having at least two prongs around a second tie bar of the clip foot portion. The conductive clip is electrically coupled to the clip foot portion of the leadframe. The clip foot portion of the leadframe includes exposed leads. The semiconductor package also includes at least one semiconductor device situated on the leadframe. The at least one semiconductor device is coupled to a driver integrated circuit situated on the leadframe.

The present disclosure relates to semiconductor components. The teachings thereof may be embodied in a lead frame for a semiconductor component including: a frame having a recess; an electrically conductive connecting element for establishing an electrical connection to the semiconductor component arranged in the recess; and an insulating element arranged in the recess and mechanically connecting the connecting element to the frame and electrically insulating it from the frame.

A semiconductor device includes a first lead portion and a second lead portion spaced from each other in a first direction. A semiconductor chip is mounted to the first lead portion. A first connector has a first portion contacting a second electrode on the chip and a second portion connected to the second lead portion. A second connector has third portion that contacts the second electrode, but at a position further away than the first portion, and a fourth portion connected to the second portion. At least a part of the second connector overlaps a part of the first connector between the first lead portion and the second lead portion.

A semiconductor device includes a first lead portion and a second lead portion spaced from each other in a first direction. A semiconductor chip is mounted to the first lead portion. A first connector has a first portion contacting a second electrode on the chip and a second portion connected to the second lead portion. A second connector has third portion that contacts the second electrode, but at a position further away than the first portion, and a fourth portion connected to the second portion. At least a part of the second connector overlaps a part of the first connector between the first lead portion and the second lead portion.

A semiconductor module is provided with a conductive member having one end, in a longitudinal direction, joined to an electrode of a semiconductor element that is mounted on an insulating substrate, the other end of the conductive member in the longitudinal direction being joined to a component different from the electrode. The conductive member is made up of a metal sheet, and has a bent portion at the one end and at the other end. The bent portion provided at the one end has a cut in a leading end portion, in the longitudinal direction, and an end joining section at which the cut is not present is joined to the electrode of the semiconductor element. As a result, a semiconductor module can be realized that allows combination of increased current capacity with improved reliability.