In one example, a method of manufacturing a semiconductor device includes providing a substrate having substrate terminals and providing a component having a first component terminal and a second component terminal adjacent to a first major side of the component. The method includes providing a clip structure having a first clip, a second clip, and a clip connector coupling the first clip to the second clip. The method includes coupling the first clip to the first component terminal and a first substrate terminal and coupling the second clip to a second substrate terminal. The method includes encapsulating the component, portions of the substrate, and portions of the clip structure. the method includes removing a sacrificial portion of the clip connector while leaving a first portion of the clip connector attached to the first clip and leaving a second portion of the clip connector attached to the second clip. In some examples, the first portion of the clip connector includes a first portion surface, the second portion of the clip connector includes a second portion surface, and the first portion surface and the second portion surface are exposed from a top side of the encapsulant after the removing. Other examples and related structures are also disclosed herein.

In one example, a method of manufacturing a semiconductor device includes providing a substrate having substrate terminals and providing a component having a first component terminal and a second component terminal adjacent to a first major side of the component. The method includes providing a clip structure having a first clip, a second clip, and a clip connector coupling the first clip to the second clip. The method includes coupling the first clip to the first component terminal and a first substrate terminal and coupling the second clip to a second substrate terminal. The method includes encapsulating the component, portions of the substrate, and portions of the clip structure. the method includes removing a sacrificial portion of the clip connector while leaving a first portion of the clip connector attached to the first clip and leaving a second portion of the clip connector attached to the second clip. In some examples, the first portion of the clip connector includes a first portion surface, the second portion of the clip connector includes a second portion surface, and the first portion surface and the second portion surface are exposed from a top side of the encapsulant after the removing. Other examples and related structures are also disclosed herein.

A strip of semiconductor devices includes a plurality of leadframes electrically isolated from each other, a plurality of semiconductor chips, and an encapsulation material. Each leadframe has a first surface and a second surface opposite to the first surface. At least one semiconductor chip of the plurality of semiconductor chips is electrically coupled to the first surface of each leadframe. The encapsulation material encapsulates each semiconductor chip and at least portions of each leadframe.

In some embodiments, a semiconductor device includes a semiconductor die including a vertical transistor device having a source electrode, a drain electrode and a gate electrode, the semiconductor die having a first surface and a metallization structure located on the first surface. The metallization structure includes a first conductive layer on the first surface, a first insulating layer on the first conductive layer, a second conductive layer on the first insulating layer, a second insulating layer on the second conductive layer and a third conductive layer on the second insulting layer. The third conductive layer includes at least one source pad electrically coupled to the source electrode, at least one drain pad electrically coupled to the drain electrode and at least one gate pad electrically coupled to the gate electrode.

Two or more switching devices (36) and two or more lead frames (41, 42, 43, and 44) are integrally molded by use of a molding resin (37) so that a power module (30) is formed; the power module (30) is made to adhere to a heat sink (32) via an insulating material (31); the power module (30) and the heat sink (32) are fixed to a housing (33) of the power module composite (23); the power module composite (23) is fixed to a case (6) of an electric rotating machine (1) via the housing (33).

Disclosed is a temporary protective film for semiconductor sealing molding comprising: a support film; and an adhesive layer provided on one surface or both surfaces of the support film and containing a resin and a silane coupling agent, and the content of the silane coupling agent in the temporary protective film may be more than 5% by mass and less than or equal to 35% by mass with respect to the total mass of the resin.

Disclosed is a temporary protective film for semiconductor sealing molding comprising: a support film; and an adhesive layer provided on one surface or both surfaces of the support film and containing a resin and a silane coupling agent, and the content of the silane coupling agent in the temporary protective film may be more than 5% by mass and less than or equal to 35% by mass with respect to the total mass of the resin.

Improvement in yield of a semiconductor device is obtained. In addition, increase in service life of a socket terminal is obtained. A projecting portion PJ1 and a projecting portion PJ2 are provided in an end portion PU of a socket terminal STE1. Thus, it is possible to enable contact between a lead and the socket terminal STE in which a large current is caused to flow, at two points by a contact using the projecting portion PJ1 and by a contact using the projecting portion PJ2, for example. As a result, the current flowing from the socket terminal STE1 to the lead flows by being dispersed into a path flowing in the projecting portion PJ1 and a path flowing in the projecting portion PJ2. Accordingly, it is possible to suppress increase of temperature of a contact portion between the socket terminal STE1 and the lead even in a case where the large current is caused to flow between the socket terminal STE1 and the lead.

Improvement in yield of a semiconductor device is obtained. In addition, increase in service life of a socket terminal is obtained. A projecting portion PJ1 and a projecting portion PJ2 are provided in an end portion PU of a socket terminal STE1. Thus, it is possible to enable contact between a lead and the socket terminal STE in which a large current is caused to flow, at two points by a contact using the projecting portion PJ1 and by a contact using the projecting portion PJ2, for example. As a result, the current flowing from the socket terminal STE1 to the lead flows by being dispersed into a path flowing in the projecting portion PJ1 and a path flowing in the projecting portion PJ2. Accordingly, it is possible to suppress increase of temperature of a contact portion between the socket terminal STE1 and the lead even in a case where the large current is caused to flow between the socket terminal STE1 and the lead.

A semiconductor device includes a semiconductor chip, a metal member, and a terminal. The semiconductor chip has an electrode. The metal member is electrically connected to the electrode. The terminal extends from the metal member to be connected to an external connection member. The terminal has a width-increased portion in a predetermined area beginning from a first end of the terminal that connects to the metal member.