A semiconductor package includes a die pad comprising a die attach surface, a first lead extending away from the die pad, one or more semiconductor dies mounted on the die attach surface, the one or more semiconductor dies comprising first and second bond pads that each face away from the die attach surface, and a distribution element that provides a first transmission path for a first electrical signal between the first lead and the first bond pad of the one or more semiconductor dies and a second transmission path for the first electrical signal between the first lead and the second bond pad of the one or more semiconductor dies. The distribution element comprises at least one integrally formed circuit element that creates a difference in transmission characteristics between the first and second transmission paths.

Reliability of a semiconductor device is improved. In the semiconductor device SA1, a snubber capacitor pad SNP electrically connected to the capacitor electrode of the snubber capacitor is formed on the surface of the semiconductor chip CHP.

Reliability of a semiconductor device is improved. In the semiconductor device SA1, a snubber capacitor pad SNP electrically connected to the capacitor electrode of the snubber capacitor is formed on the surface of the semiconductor chip CHP.

A semiconductor device includes a first lead portion and a second lead portion spaced from each other in a first direction. A semiconductor chip is mounted to the first lead portion. A first connector has a first portion contacting a second electrode on the chip and a second portion connected to the second lead portion. A second connector has third portion that contacts the second electrode, but at a position further away than the first portion, and a fourth portion connected to the second portion. At least a part of the second connector overlaps a part of the first connector between the first lead portion and the second lead portion.

A semiconductor device includes a first lead portion and a second lead portion spaced from each other in a first direction. A semiconductor chip is mounted to the first lead portion. A first connector has a first portion contacting a second electrode on the chip and a second portion connected to the second lead portion. A second connector has third portion that contacts the second electrode, but at a position further away than the first portion, and a fourth portion connected to the second portion. At least a part of the second connector overlaps a part of the first connector between the first lead portion and the second lead portion.

A semiconductor device includes a semiconductor element, a sealing body, and a plurality of terminals. The sealing body seals the semiconductor element therein. The terminals are electrically connected to the semiconductor element inside of the sealing body, and project from the sealing body. Each of the terminals has a rough surface area having a larger surface roughness than a peripheral area in a section in a longitudinal direction of the terminal.

A semiconductor device includes a semiconductor element, a sealing body, and a plurality of terminals. The sealing body seals the semiconductor element therein. The terminals are electrically connected to the semiconductor element inside of the sealing body, and project from the sealing body. Each of the terminals has a rough surface area having a larger surface roughness than a peripheral area in a section in a longitudinal direction of the terminal.

A semiconductor package comprises a lead frame, a low side metal-oxide-semiconductor field-effect transistor (MOSFET), an E-fuse MOSFET, a high side MOSFET, a metal connection, a gate driver, an E-fuse IC, and a molding encapsulation. A buck converter comprises a smart power stage (SPS) network and an E-fuse solution network. The SPS network comprises a high side switch, a low side switch, and a gate driver. A drain of the low side switch is coupled to a source of the high side switch via a switch node. The gate driver is coupled to a gate of the high side switch and a gate of the low side switch. The E-fuse solution network comprises a sense resistor, an E-fuse switch, an E-fuse integrated circuit (IC), and an SD circuit.

A semiconductor package comprises a lead frame, a low side metal-oxide-semiconductor field-effect transistor (MOSFET), an E-fuse MOSFET, a high side MOSFET, a metal connection, a gate driver, an E-fuse IC, and a molding encapsulation. A buck converter comprises a smart power stage (SPS) network and an E-fuse solution network. The SPS network comprises a high side switch, a low side switch, and a gate driver. A drain of the low side switch is coupled to a source of the high side switch via a switch node. The gate driver is coupled to a gate of the high side switch and a gate of the low side switch. The E-fuse solution network comprises a sense resistor, an E-fuse switch, an E-fuse integrated circuit (IC), and an SD circuit.

Implementations of the semiconductor package may include a first sidewall opposite a second sidewall, and a third sidewall opposite a fourth sidewall. Implementations of the semiconductor package may include a first lead and a second lead extending from the first sidewall and a first half-etched tie bar directly coupled to the first lead. An end of the first half-etched tie bar may be exposed on the third sidewall of the semiconductor package. Implementations of the semiconductor package may also include a second half-etched tie bar directly coupled to the second lead. An end of the second half-etched tie bar may be exposed on the fourth sidewall. An end of the first lead and an end of the second lead may each be electroplated. The first die flag and the second die flag may be electrically isolated from the first lead and the second lead.