A semiconductor device, having a first semiconductor chip including a first side portion at a front surface thereof and a first control electrode formed in the first side portion, a second semiconductor chip including a second side portion at a front surface thereof and a second control electrode formed in the second side portion, a first circuit pattern, on which the first semiconductor chip and the second semiconductor chip are disposed, a second circuit pattern, and a first control wire electrically connecting the first control electrode, the second control electrode, and the second circuit pattern. The first side portion and the second side portion are aligned. The first control electrode and the second control electrode are aligned. The second circuit pattern are aligned with the first control electrode and the second control electrode.

A module includes an electronic component, an enclosure at least partially enclosing the electronic component and defining a module interface at which the module is configured to be mounted on a mounting base, and a gas flow-inhibiting sealing at the module interface and configured to inhibit gas from propagating from an exterior of the module towards the electronic component. An electronic device that includes the module and a method of manufacturing the module are also described.

A module includes an electronic component, an enclosure at least partially enclosing the electronic component and defining a module interface at which the module is configured to be mounted on a mounting base, and a gas flow-inhibiting sealing at the module interface and configured to inhibit gas from propagating from an exterior of the module towards the electronic component. An electronic device that includes the module and a method of manufacturing the module are also described.

The present invention relates to a two-end driving, high-frequency sub-substrate structure, comprising a sub-substrate body, wherein: the sub-substrate body has an upper side provided with a first signal pad area and a second signal pad area, the first signal pad area and the second signal pad area are symmetric with respect to each other, each of the first signal pad area and the second signal pad area extends from one of two lateral portions of the sub-substrate body in an extending direction toward a center of the sub-substrate body and terminates in an end, the end of the first signal pad area is adjacent to but spaced from the end of the second signal pad area, the first signal pad area is configured for supporting a semiconductor chip provided thereon, the second signal pad area is provided with a jumper wire connected to an electrode of the semiconductor chip, there are two grounding pad areas provided respectively on two lateral sides of the first signal pad area and the second signal pad area and constituting a portion of a coplanar waveguide, the sub-substrate body has an inner layer or bottom side that is provided with a grounding layer or combined with a grounding layer.

The present invention relates to a two-end driving, high-frequency sub-substrate structure, comprising a sub-substrate body, wherein: the sub-substrate body has an upper side provided with a first signal pad area and a second signal pad area, the first signal pad area and the second signal pad area are symmetric with respect to each other, each of the first signal pad area and the second signal pad area extends from one of two lateral portions of the sub-substrate body in an extending direction toward a center of the sub-substrate body and terminates in an end, the end of the first signal pad area is adjacent to but spaced from the end of the second signal pad area, the first signal pad area is configured for supporting a semiconductor chip provided thereon, the second signal pad area is provided with a jumper wire connected to an electrode of the semiconductor chip, there are two grounding pad areas provided respectively on two lateral sides of the first signal pad area and the second signal pad area and constituting a portion of a coplanar waveguide, the sub-substrate body has an inner layer or bottom side that is provided with a grounding layer or combined with a grounding layer.

A power semiconductor module includes a leadframe having a first die pad, a second die pad separated from the first die pad, a first power lead formed as an extension of the first die pad, a second power lead separated from the first and second die pads, and a first connection region formed as an extension of the second power lead alongside the second die pad. A first plurality of power semiconductor dies is attached to the first die pad and electrically coupled in parallel. A second plurality of power semiconductor dies is attached to the second die pad and electrically coupled in parallel. A first electrical connection extends between the first plurality of power semiconductor dies and the second die pad in a first direction. A second electrical connection extends between the second plurality of power semiconductor dies and the first connection region in the first direction.

A half-bridge power semiconductor module includes an insulating wiring board including a positive-electrode wiring conductor, a bridge wiring conductor, and a negative-electrode wiring conductor arranged on or above a single insulating plate in such a way as to be electrically insulated from each other. The back-surface electrodes of a high-side power semiconductor device and a low-side power semiconductor device are joined to the front sides of the positive-electrode wiring conductor and the bridge wiring conductor. Front-surface electrodes of the high-side power semiconductor device and the low-side power semiconductor device are connected to the bridge wiring conductor and the negative-electrode wiring conductor by a plurality of bonding wires and a plurality of bonding wires.

A half-bridge power semiconductor module includes an insulating wiring board including a positive-electrode wiring conductor, a bridge wiring conductor, and a negative-electrode wiring conductor arranged on or above a single insulating plate in such a way as to be electrically insulated from each other. The back-surface electrodes of a high-side power semiconductor device and a low-side power semiconductor device are joined to the front sides of the positive-electrode wiring conductor and the bridge wiring conductor. Front-surface electrodes of the high-side power semiconductor device and the low-side power semiconductor device are connected to the bridge wiring conductor and the negative-electrode wiring conductor by a plurality of bonding wires and a plurality of bonding wires.

In a described example, an apparatus includes: a process chamber configured for a pressure greater than one atmosphere, having a device chuck configured to support electronic devices that are mounted on package substrates and partially covered in mold compound, the electronic devices spaced from one another by saw streets; and a saw in the process chamber configured to cut through the mold compound and package substrates in the saw streets to separate the molded electronic devices one from another.

A power module of the invention includes a power semiconductor element mounted on a circuit board, and an adapter connected to a front-surface main electrode of the element, wherein the adapter includes a main-electrode wiring member which is connected to the front-surface main electrode of the element; and wherein the main-electrode wiring member includes: an element connection portion connected to the front-surface main electrode of the element; a board connection portion which is placed outside the element connection portion and connected to the circuit board; and a connector connection portion which is placed outside the element connection portion and connected to an external electrode through a connector.