A power module of the invention includes a power semiconductor element mounted on a circuit board, and an adapter connected to a front-surface main electrode of the element, wherein the adapter includes a main-electrode wiring member which is connected to the front-surface main electrode of the element; and wherein the main-electrode wiring member includes: an element connection portion connected to the front-surface main electrode of the element; a board connection portion which is placed outside the element connection portion and connected to the circuit board; and a connector connection portion which is placed outside the element connection portion and connected to an external electrode through a connector.

Package assemblies for improving heat dissipation of high-power components in microwave circuits are described. A laminate that includes microwave circuitry may have cut-outs that allow high-power components to be mounted directly on a heat slug below the laminate. Electrical connections to circuitry on the laminate may be made with wire bonds. The packaging allows more flexible design and tuning of packaged microwave circuitry.

Package assemblies for improving heat dissipation of high-power components in microwave circuits are described. A laminate that includes microwave circuitry may have cut-outs that allow high-power components to be mounted directly on a heat slug below the laminate. Electrical connections to circuitry on the laminate may be made with wire bonds. The packaging allows more flexible design and tuning of packaged microwave circuitry.

The present invention provides a power module including a substrate and a modular housing structure. The substrate includes an electronic element disposed thereon. The modular housing structure is disposed on the substrate and located around the electronic element. The modular housing structure includes a plurality of sidewalls configured to connect with each other detachably. Each sidewall includes two connecting elements disposed on two opposite ends thereof respectively. The two connecting elements of any one of the sidewalls are connected to two corresponding connecting elements of two adjacent sidewalls respectively. Consequently, the numbers and connections of the sidewalls are adjustable and varied according to the size of the substrate so as to avoid the waste of space and enhance the power density.

A floating die package including a cavity formed through sublimation of a sacrificial die encapsulant and sublimation or separation of die attach materials after molding assembly. A pinhole vent in the molding structure is provided as a sublimation path to allow gases to escape, whereby the die or die stack is released from the substrate and suspended in the cavity by the bond wires only.

A floating die package including a cavity formed through sublimation of a sacrificial die encapsulant and sublimation or separation of die attach materials after molding assembly. A pinhole vent in the molding structure is provided as a sublimation path to allow gases to escape, whereby the die or die stack is released from the substrate and suspended in the cavity by the bond wires only.

A power semiconductor module includes: a substrate with a metallization layer attached to a dielectric insulation layer and a semiconductor body mounted to the metallization layer; a housing at least partly enclosing the substrate and having sidewalls and a cover that at least partly covers an opening formed by the sidewalls and has a flexible portion; and a press-on pin having arranged on the substrate or semiconductor body. A first end of the press-on pin faces the substrate or semiconductor body and extends towards the cover such that a second end of the press-on pin contacts the flexible portion of the cover. The substrate in an area vertically below the press-on pin has a first spring constant k.sub.1 in a vertical direction that is perpendicular to a top surface of the substrate. The flexible portion of the cover has a second spring constant k.sub.2, where 0.5*k.sub.1≤k.sub.2≤5*k.sub.1.

A power semiconductor module includes: a substrate with a metallization layer attached to a dielectric insulation layer and a semiconductor body mounted to the metallization layer; a housing at least partly enclosing the substrate and having sidewalls and a cover that at least partly covers an opening formed by the sidewalls and has a flexible portion; and a press-on pin having arranged on the substrate or semiconductor body. A first end of the press-on pin faces the substrate or semiconductor body and extends towards the cover such that a second end of the press-on pin contacts the flexible portion of the cover. The substrate in an area vertically below the press-on pin has a first spring constant k.sub.1 in a vertical direction that is perpendicular to a top surface of the substrate. The flexible portion of the cover has a second spring constant k.sub.2, where 0.5*k.sub.1≤k.sub.2≤5*k.sub.1.

A power semiconductor contact structure for power semiconductor modules, which has at least one substrate 1 and a metal moulded body 2 as an electrode, which are sintered one on top of the other by means of a substantially uninterrupted sintering layer 3a with regions of varying thickness. The metal moulded body 2 takes the form here of a flexible contacting film 5 of such a thickness that this contacting film is sintered with its side 4 facing the sintering layer 3a onto the regions of varying thickness of the sintering layer substantially over the full surface area. A description is also given of a method for forming a power semiconductor contact structure in a power semiconductor module that has a substrate and a metal moulded body. The forming of the power semiconductor contact structure is performed firstly by applying a layer of sintering material of locally varying thickness to either the metal moulded body 2 or the substrate, followed by sintering together the contacting film 5 with the substrate 1 by using the properties of the layer of sintering material that are conducive to connection, the contacting film 5 being made to develop its distinct form to correspond to the varying thickness of the layer of sintering material 3a.

A power semiconductor contact structure for power semiconductor modules, which has at least one substrate 1 and a metal moulded body 2 as an electrode, which are sintered one on top of the other by means of a substantially uninterrupted sintering layer 3a with regions of varying thickness. The metal moulded body 2 takes the form here of a flexible contacting film 5 of such a thickness that this contacting film is sintered with its side 4 facing the sintering layer 3a onto the regions of varying thickness of the sintering layer substantially over the full surface area. A description is also given of a method for forming a power semiconductor contact structure in a power semiconductor module that has a substrate and a metal moulded body. The forming of the power semiconductor contact structure is performed firstly by applying a layer of sintering material of locally varying thickness to either the metal moulded body 2 or the substrate, followed by sintering together the contacting film 5 with the substrate 1 by using the properties of the layer of sintering material that are conducive to connection, the contacting film 5 being made to develop its distinct form to correspond to the varying thickness of the layer of sintering material 3a.