Implementations of semiconductor packages may include a substrate, a first die coupled on the substrate, and a lead frame coupled over the substrate. The lead frame may include a die attach pad. Implementations of semiconductor packages may also include a second die coupled on the die attach pad. The second die may overlap the first die.

A semiconductor package includes a substrate that includes a bonding pad, a first semiconductor chip disposed on the substrate, a second semiconductor chip disposed on a top surface of the first semiconductor chip that is opposite to the substrate, a chip pad disposed on the top surface of the first semiconductor chip, and a bonding wire that connects the chip pad to the bonding pad. The bonding wire includes a first upward protrusion and a second upward protrusion that are convexly curved in a direction away from the substrate. The second semiconductor chip has a first side surface between the first upward protrusion and the second upward protrusion.

Electronic chip comprising a first integrated circuit, a second integrated circuit, a first link connecting the first integrated circuit and the second integrated circuit, a second link connecting the first integrated circuit and the second integrated circuit, a surface-mount component, the component being configured and placed to limit an electromagnetic disturbance by the first link of the second link.

Provided is a semiconductor device that has a configuration provided with: a driving unit for driving an upper switching element and a lower switching element according to a control signal for controlling the driving of the upper switching element and the lower switching element, which are connected in series to constitute a bridge circuit; an insulating unit having an insulating transformer; and a package for sealing at least a part of the insulating unit and the driving unit. The insulating unit transmits a signal corresponding to the control signal to the driving unit side while insulating the signal.

Provided is a semiconductor device that has a configuration provided with: a driving unit for driving an upper switching element and a lower switching element according to a control signal for controlling the driving of the upper switching element and the lower switching element, which are connected in series to constitute a bridge circuit; an insulating unit having an insulating transformer; and a package for sealing at least a part of the insulating unit and the driving unit. The insulating unit transmits a signal corresponding to the control signal to the driving unit side while insulating the signal.

A semiconductor device capable of securing an insulation distance between a semiconductor element and a wiring. The semiconductor device includes a first semiconductor element, a second semiconductor element, a first wiring, and a second wiring. The first semiconductor element includes a first main surface and a second main surface. An electrode is formed on the first main surface. The second semiconductor element is disposed at a position different from a position of the first semiconductor element in a thickness direction. The first wiring includes an end connected to the electrode. The end includes an upper surface and a cut surface. Diameter of the second wiring is smaller than diameter of the first wiring. The second wiring includes a first end and a second end. The first end is directly connected to the upper surface of the end of the first wiring.

A semiconductor module includes: an insulating heat dissipation sheet; a semiconductor device provided on the heat dissipation sheet; a lead frame including a lead terminal and a die pad which are formed integrally; a wire connecting the lead frame to the semiconductor device and constituting a main current path; and a mold resin scaling the heat dissipation sheet, the semiconductor device, the lead frame and the wire, wherein the lead terminal is led out from the mold resin, the heat dissipation sheet is in direct contact with an undersurface of the die pad, and the wire is bonded to the die pad directly above a contact part provided between the die pad and the heat dissipation sheet.

A semiconductor includes: a substrate; a circuit pattern on the substrate, and including a first region, a second region located away from the first region, and a third region between the first region and the second region; a first chip disposed in the second region and including a diode; a second chip disposed in the third region, the second chip including a vertical transistor having a source pad disposed on a surface opposite to a surface facing the third region in a thickness direction of the substrate, and a gate pad disposed at a position different from the source pad; a first wire including a first bonded portion bonded to the first region, a second bonded portion bonded to the second chip, and a third bonded portion bonded to the first chip; and a second wire arranged to be adjacent to the first wire with the gate pad sandwiched therebetween.

A semiconductor device includes: a first semiconductor element to switch between an electrical communication state and a blocked state in accordance with a first driving signal; a first control element to generate the first driving signal based on a first input signal; a second semiconductor element to switch between an electrical communication state and a blocked state in accordance with a second driving signal; and a second control element to generate the second driving signal based on a second input signal. The second input signal is input to the first control element, and thus the first control element determines whether or not the second semiconductor element is in the electrical communication state based on the second input signal. When the second semiconductor element is in the electrical communication state, the first control element delays switching of the first semiconductor element from the blocked state to the electrical communication state.

A semiconductor device includes: a first semiconductor element to switch between an electrical communication state and a blocked state in accordance with a first driving signal; a first control element to generate the first driving signal based on a first input signal; a second semiconductor element to switch between an electrical communication state and a blocked state in accordance with a second driving signal; and a second control element to generate the second driving signal based on a second input signal. The second input signal is input to the first control element, and thus the first control element determines whether or not the second semiconductor element is in the electrical communication state based on the second input signal. When the second semiconductor element is in the electrical communication state, the first control element delays switching of the first semiconductor element from the blocked state to the electrical communication state.