A method for manufacturing a semiconductor device includes: a first bonding process including bonding, at a first bonding point, a tip of a wire held by a capillary; a first lifting process including moving the capillary upward; a first reverse process including moving the capillary in a direction that includes a component in a first direction that is from a second bonding point toward the first bonding point; a second lifting process including moving the capillary upward; a second reverse process including moving the capillary in the first direction; a third lifting process including moving the capillary upward; a forward process including moving the capillary toward the second bonding point; and a second bonding process including bonding the wire at the second bonding point. A movement distance of the capillary in the first lifting process is not less than a movement distance of the capillary in the second lifting process.

A redistribution assembly may have multiple layers. Each layer may include a signal conductor and a ground conductor. The width of the ground conductors may exceed the width of the signal conductors. In addition, the layers may be vertically positioned over each other to form the redistribution layer assembly. The conductors may be interleaved such that the ground conductor of a top layer is vertically positioned over the signal conductor for a bottom layer and the signal conductor of the top layer is positioned over the ground conductor of the bottom layer. Multi-layer redistribution layer assemblies may be used with stacks of dies in an IC package to create a fly-by topology that provides electrical continuity in the X, Y and Z dimensions.

A lead frame for assembling a smart card is formed with a substrate having first and second opposing major surfaces. A die receiving area is formed in the first major surface of the substrate and surrounded by conductive vias. A conductive coating is formed on the second major surface of the substrate and patterned to form electrical contact pads over the conductive vias. A conductive trace is formed on the first major surface of the substrate. The conductive trace extends between at least two adjacent vias and partially surrounds the at least two adjacent conductive vias, thereby forming a gap in the portion of the trace that surrounds the vias. An electrical connection between an integrated circuit chip and the conductive via extends over the gap. The gap prevents the electrical connection from inadvertently contacting the conductive trace.

A lead frame for assembling a smart card is formed with a substrate having first and second opposing major surfaces. A die receiving area is formed in the first major surface of the substrate and surrounded by conductive vias. A conductive coating is formed on the second major surface of the substrate and patterned to form electrical contact pads over the conductive vias. A conductive trace is formed on the first major surface of the substrate. The conductive trace extends between at least two adjacent vias and partially surrounds the at least two adjacent conductive vias, thereby forming a gap in the portion of the trace that surrounds the vias. An electrical connection between an integrated circuit chip and the conductive via extends over the gap. The gap prevents the electrical connection from inadvertently contacting the conductive trace.

A semiconductor chip includes a substrate including a circuit area having a rectangular shape and a peripheral area surrounding the circuit area, a key area being overlapping a part of the circuit area and a part of the peripheral area, a plurality of drive circuit cells in the circuit area, and a conductive reference line on the peripheral area and extending in a first direction parallel to a first edge among four edges of the rectangular shape of the circuit area.

A packaged semiconductor device includes a substrate including a die pad and a drain terminal extending from the die pad in one direction in a plan view, a gate terminal and a source terminal extending in the one direction on both sides of the drain terminal. A semiconductor chip has a rectangular shape and is disposed on the die pad such that short sides are parallel to the drain terminal and a center of gravity is closer to the source terminal than the gate terminal. A gate pad is disposed on the gate terminal side on an upper surface of the semiconductor chip. A plurality of source pads is arrayed from the source terminal side toward the gate terminal side on the upper surface of the semiconductor chip. A gate wire connects the gate pad to the gate terminal, and a plurality of source wires connects the plurality of source pads to the source terminal.

A semiconductor device includes a semiconductor element, a conductive layer, terminals, and a sealing resin. The conductive layer, containing metal particles, is in contact with the reverse surface and the side surface of the semiconductor element. The terminals are spaced apart from and electrically connected to the semiconductor element. The sealing resin covers the semiconductor element. The conductive layer has an edge located outside of the semiconductor element as viewed in plan. Each terminal includes a top surface, a bottom surface, an inner side surface held in contact with the sealing resin, and the terminal is formed with a dent portion recessed from the bottom surface and the inner side surface. The conductive layer and the bottom surface of each terminal are exposed from a bottom surface of the sealing resin.

A printed circuit board includes first and second insulating layers forming a cavity, a first heat releasing layer formed on an exterior surface of the cavity, and a circuit layer formed above or below the first the insulating layer and at least between a surface of the cavity and the first insulating layer. The heat releasing layer is electrically connected to at least a portion of the circuit layer.

Chip scale package such as a chip scale package having a chip integrated therein to provide an integrated chip scale package.

A semiconductor device includes a semiconductor element, a conductive layer, terminals, and a sealing resin. The conductive layer, containing metal particles, is in contact with the reverse surface and the side surface of the semiconductor element. The terminals are spaced apart from and electrically connected to the semiconductor element. The sealing resin covers the semiconductor element. The conductive layer has an edge located outside of the semiconductor element as viewed in plan. Each terminal includes a top surface, a bottom surface, an inner side surface held in contact with the sealing resin, and the terminal is formed with a dent portion recessed from the bottom surface and the inner side surface. The conductive layer and the bottom surface of each terminal are exposed from a bottom surface of the sealing resin.