Patent classifications
H01L2224/48138
Method of manufacturing semiconductor device and semiconductor device
To enhance reliability of a test by suppressing defective bonding of a solder in the test of a semiconductor device, a method of manufacturing the semiconductor device includes: preparing a semiconductor wafer that includes a first pad electrode provided with a first cap film and a second pad electrode provided with a second cap film. Further, a polyimide layer that includes a first opening on the first pad electrode and a second opening on the second pad electrode is formed, and then, a rearrangement wiring that is connected to the second pad electrode via the second opening is formed. Next, an opening is formed in the polyimide layer such that an organic reaction layer remains on each of the first pad electrode and a bump land of the rearrangement wiring, then heat processing is performed on the semiconductor wafer, and then, a bump is formed on the rearrangement wiring.
IMAGING DEVICES, CAMERA MODULES, AND FABRICATION METHODS THEREOF
An imaging device includes an image sensor chip. The image sensor chip includes a photosensitive surface and, opposite to the photosensitive surface, a bottom surface. The photosensitive surface includes a sensitive region, a peripheral transition region surrounding the photosensitive region, and an input/output wiring region surrounding the peripheral transition region. At least one input/output wiring pad is disposed in the input/output wiring region. The imaging device also includes a selective filter cover, disposed above the photosensitive region; and a retaining wall, disposed in the peripheral transition region and bonded to the selective filter cover. The retaining wall and the selective filter cover together form a closed cavity above the photosensitive region. The imaging device further includes a plurality of outgoing wires. A terminal of each outgoing wire is connected to an input/output wiring pad, and another terminal of the outgoing wire extends out from the image sensor chip.
Method Of Making A Wire Support Leadframe For A Semiconductor Device
A leadframe includes a plurality of interconnected support members. A pair of die pads is connected to the support members and configured to receive a pair of dies electrically connected by at least one wire. A support bracket extends between the die pads and includes a surface for maintaining the at least one wire at a predetermined distance from the die pads during overmolding of the leadframe.
IC package with heat spreader
An integrated circuit (IC) package includes a molding having a first surface and a second surface, the first surface opposing the second surface. An interconnect is encased in the molding. The interconnect includes pads situated at a periphery of a side of the IC package. A portion of the pads are exposed at the first surface of the molding. A die pad is situated proximal to the second surface of the molding. The die pad has a first surface and a second surface, the first surface opposing the second surface, and the second surface is circumscribed by the second surface of the molding. A die is mounted on the first surface of the die pad. A heat spreader is mounted on the second surface of the molding and the second surface of the die pad. The heat spreader extends between edges of the second surface of the molding.
Method of making a wire support leadframe for a semiconductor device
A leadframe includes a plurality of interconnected support members. A pair of die pads is connected to the support members and configured to receive a pair of dies electrically connected by at least one wire. A support bracket extends between the die pads and includes a surface for maintaining the at least one wire at a predetermined distance from the die pads during overmolding of the leadframe.
Power overlay structure and reconstituted semiconductor wafer having wirebonds
A power overlay (POL) structure includes a power device having at least one upper contact pad disposed on an upper surface of the power device, and a POL interconnect layer having a dielectric layer coupled to the upper surface of the power device and a metallization layer having metal interconnects extending through vias formed through the dielectric layer and electrically coupled to the at least one upper contact pad of the power device. The POL structure also includes at least one copper wirebond directly coupled to the metallization layer.
Wire Support For A Leadframe
A leadframe includes a plurality of interconnected support members. A pair of die pads is connected to the support members and configured to receive a pair of dies electrically connected by at least one wire. A support bracket extends between the die pads and includes a surface for maintaining the at least one wire at a predetermined distance from the die pads during overmolding of the leadframe.
Wire support for a leadframe
A leadframe includes a plurality of interconnected support members. A pair of die pads is connected to the support members and configured to receive a pair of dies electrically connected by at least one wire. A support bracket extends between the die pads and includes a surface for maintaining the at least one wire at a predetermined distance from the die pads during overmolding of the leadframe.
IC PACKAGE WITH HEAT SPREADER
An integrated circuit (IC) package includes a molding having a first surface and a second surface, the first surface opposing the second surface. An interconnect is encased in the molding. The interconnect includes pads situated at a periphery of a side of the IC package. A portion of the pads are exposed at the first surface of the molding. A die pad is situated proximal to the second surface of the molding. The die pad has a first surface and a second surface, the first surface opposing the second surface, and the second surface is circumscribed by the second surface of the molding. A die is mounted on the first surface of the die pad. A heat spreader is mounted on the second surface of the molding and the second surface of the die pad. The heat spreader extends between edges of the second surface of the molding.
POWER CONVERTER APPARATUS
A power converter apparatus includes a first wire connected to first and second conductive portions on a substrate. The first wire includes first and second bonding portions that are bonded respectively to the first and second conductive portions and each have at opposite ends thereof respectively a bonding end and a joining end; and a wiring portion having opposite ends, to which the joining ends of the first and second bonding portions are connected and being located away from the front surface of the substrate. In a plan view, a first extending direction in which the first bonding portion extends is inclined at a first acute angle, from a first direction of a first line passing through the bonding ends of first and second bonding portions, toward a second direction of a force that acts on the first bonding portion due to thermal expansion of the sealing member.