A circuit device comprises a circuit board and a plurality of leads each comprising an island portion, a bonding portion elevated from the island portion, and an oblique slope portion connecting the island portion and the bonding portion, and a plurality of circuit elements mounted on the island portions so as to be connected to corresponding bonding portions through wirings. Two leads are adapted to be connected to positive and negative electrodes of a direct-current power source, and yet another lead is an output lead adapted to output alternating-current power. One electrode provided on a transistor mounted on an island portion of the second input lead is connected to a bonding portion of the output lead through a wiring, and another electrode provided on a transistor mounted on an island portion of the output lead is connected to a bonding portion of the first input lead through a wiring.

A circuit device comprises a circuit board and a plurality of leads each comprising an island portion, a bonding portion elevated from the island portion, and an oblique slope portion connecting the island portion and the bonding portion, and a plurality of circuit elements mounted on the island portions so as to be connected to corresponding bonding portions through wirings. Two leads are adapted to be connected to positive and negative electrodes of a direct-current power source, and yet another lead is an output lead adapted to output alternating-current power. One electrode provided on a transistor mounted on an island portion of the second input lead is connected to a bonding portion of the output lead through a wiring, and another electrode provided on a transistor mounted on an island portion of the output lead is connected to a bonding portion of the first input lead through a wiring.

A semiconductor device having an arm block. The arm block includes a first circuit pattern that, in a plan view of the semiconductor device, has a recess formed thereon that extends inward from a side thereof, the recess forming a disposition area of the semiconductor device, a second circuit pattern having at least a part disposed in the disposition area, and a plurality of semiconductor chips formed on the first circuit pattern. Each semiconductor chip has a positive electrode on a back surface thereof, and a control electrode and a negative electrode on a front surface thereof, the negative electrode being electrically connected to the second circuit pattern by a wiring member.

A semiconductor device, including a substrate having an insulating layer and a plurality of circuit patterns formed on the insulating layer, the substrate having a principal surface on which an element region is set. The semiconductor device further includes a plurality of semiconductor elements provided on the plurality of circuit patterns in the element region, a plurality of main terminals that each have a first end joined to one of the plurality of circuit patterns in the element region and a second end extending out of the substrate from a first side of the substrate, a plurality of control terminals disposed in a control region that is adjacent to a second side of the substrate opposite the first side, and a sealing member that seals the principal surface and the control region.

A power module includes a first MOS transistor and a first Schottky barrier diode for a lower arm, and a second MOS transistor and a second Schottky barrier diode for an upper arm. In one embodiment, one positive-side power supply terminal and one negative-side power supply terminal are provided, while an output terminal to which the first and second MOS transistors are connected and an output terminal to which the first and second Schottky barrier diodes are connected are provided as separate output terminals.

An object of the present invention is to suppress reduction in a temperature cycle life of a wiring in a two-in-one type chopper module. A two-in-one type chopper module according to the present invention includes: a switching transistor; a first diode inverse-parallelly connected to the switching transistor; a second diode serially connected to the switching transistor and the first diode; a first wiring pattern mounting the switching transistor and the first diode; and a second wiring pattern mounting the second diode, wherein each of the switching transistor and the first diode has a power loss substantially identical with each other at a time of a forward direction current conduction, and an effective area of the second diode is larger than an effective area of the first diode.

A semiconductor device that includes a plurality of trench gate structures each having a gate electrode extending in a depth direction of an element, the plurality of trench gate structures including first trench gate structures respectively contributing to control of the element and second trench gate structures respectively not contributing to the control of the element, the semiconductor device including an electrode portion having a potential other than a gate potential, and an electrode pad that is disposed on a front face of a semiconductor substrate, wherein the electrode pad is used as a terminal to apply a predetermined voltage to gate insulator films, in screening that is executed by applying the predetermined voltage to the gate insulator films respectively in contact with the gate electrode connected to the electrode pad and that is executed before the electrode pad is short-circuited to the electrode portion.

A power semiconductor module includes a wiring member that electrically connects a front surface electrode of a semiconductor element and a circuit board of an insulating substrate in a housing. A resin provided in the housing covers the wiring member, and has a height in the vicinity of the wiring member. A cover covering the periphery of external terminals is provided between the resin and a first lid in the housing. A second lid is provided further outside the first lid in an aperture portion of the housing, and the space between the second lid and the first lid is filled with another resin.

A method for fabricating a semiconductor device includes providing a semiconductor die, arranging an electrical connector over the semiconductor die, the electrical connector including a conductive core, an absorbing feature arranged on a first side of the conductive core, and a solder layer arranged on a second side of the conductive core, opposite the first side and facing the semiconductor die, and soldering the electrical connector onto the semiconductor die by heating the solder layer with a laser, wherein the laser irradiates the absorbing feature and absorbed energy is transferred from the absorbing feature through the conductive core to the solder layer.

A semiconductor device includes an inverter circuit having a first switching element and a second switching element, a first control circuit, a second control circuit, and a limiting unit. The first switching element is supplied with a power supply voltage. The second switching element includes a first terminal connected to the first switching element, a second terminal connected to ground, and a control terminal. The first control circuit controls the first switching element. The second control circuit controls the second switching element. The limiting unit reduces fluctuation in voltage between the second terminal and the control terminal based on voltage fluctuation at the second terminal of the second switching element.