A power module includes a metal frame having a first and second device attach pads, first and second semiconductor packages each having an encapsulant body, a die pad exposed at a lower surface of the encapsulant body, a plurality of leads protruding out from the encapsulant body, and a potting compound that encapsulates both of the first and second semiconductor packages and partially covers the metal frame. The first semiconductor package is mounted on the metal frame such that the die pad of the first semiconductor package faces and electrically contacts the first device attach pad. The second semiconductor package is mounted on the metal frame such that the die pad of the second semiconductor package faces and electrically contacts the second device attach pad. The plurality of leads from each of the first and second semiconductor packages are electrically accessible from outside of the potting compound.

A semiconductor guide pin is disclosed. Specific implementations may include a heatsink, one or more substrates coupled together, one or more pressfit pins coupled to the one or more substrates, and two or more guide pins coupled to the one or more substrates, where the two or more guide pins may have a height greater than the one or more pressfit pins.

A method of forming a semiconductor device includes providing a substrate that comprises a metal region, forming an encapsulant body of electrically insulating material on an upper surface of the metal region, forming an opening in the encapsulant body, and inserting a press-fit connector into the opening, wherein after inserting the press-fit connector into the opening, the press-fit connector is securely retained to the substrate and an interfacing end of the press-fit connector is electrically accessible.

A semiconductor device includes an insulating layer having a first surface and a second surface opposite to the first surface. The semiconductor device includes at least one semiconductor element located on a side of the first surface. The semiconductor device includes a first metal sinter and a second metal sinter. The first metal sinter is in contact with the first surface of the insulating layer and the semiconductor element, and bonds the insulating layer and the semiconductor element. The second metal sinter is in contact with the second surface of the insulating layer.

A power module includes a plurality of conductive wire groups and a sealing member. The plurality of conductive wire groups each include a first bonded portion and a second bonded portion. A maximum gap between intermediate portions of a pair of conductive wire groups adjacent to each other is larger than a first gap between the first bonded portions of the pair of conductive wire groups adjacent to each other. The maximum gap between the intermediate portions of the pair of conductive wire groups adjacent to each other is larger than a second gap between the second bonded portions of the pair of conductive wire groups adjacent to each other. Therefore, the power module is improved in reliability.

A power semiconductor module contains a power semiconductor assembly, a housing which in a housing side with an outer surface has a recess with a direction of passage in the normal direction of the outer surface, having an internal contact device which has an electrically conducting contact inside the housing to an external connection element, designed as a load terminal element, with one section in the recess and having a spring element. The connection element is designed as a rigid metallic shaped body with an inner and an outer contact surface, and the outer contact surface is accessible from the outside, and the connection element is connected to the housing via an electrically insulating and mechanically elastic retaining device such that the connection element is moveable in the direction of passage, and wherein the spring element is arranged and designed in such a way that the spring action thereof acts directly or indirectly on the connection element in the direction of passage.

A semiconductor device includes: a semiconductor module including a switching device, a first wiring connected to the switching device, a second wiring positioned adjacent to the first wiring and generating induced electromotive force according to a change in an electric current flowing in the first wiring, and a sealing material sealing the switching device, the first wiring and the second wiring, wherein both of one end and the other end of the second wiring are exposed from the sealing material; a substrate including a GND electrode connected to the one end and on which the semiconductor module is mounted; and a diode rectifying the induced electromotive force output from the other end.

A semiconductor device includes first semiconductor chips that each include a first control electrode and a first output electrode, second semiconductor chips each include a second control electrode and a second output electrode, first and second input circuit patterns on which the first and second input electrodes are disposed, respectively, first and second control circuit patterns electrically connected to the first and second control electrodes, respectively, first and second resistive elements, and a first inter-board wiring member. The first control electrodes and first resistive element are electrically connected via the first control circuit pattern, the second control electrodes and second resistive element are electrically connected via the second control circuit pattern, and at least one of the first output electrodes and at least one of the second output electrodes are electrically connected to each other via the first inter-board wiring member.

Evaluation board (EVB) assemblies or stacks utilized in tuning electronic modules are disclosed, as are methods for tuning such modules. In embodiments, the module testing assembly includes an EVB and an EVB baseplate. The EVB includes, in turn, an EVB through-port extending from a first EVB side to a second, opposing EVB side; and a module mount region on the first EVB side and extending about a periphery of the EVB through-port. The module mount region is shaped and sized to accommodate installation of a sample electronic module provided in a partially-completed, pre-encapsulated state fabricated in accordance with a separate thermal path electronic module design. A baseplate through-port combines with the EVB through-port to form a tuning access tunnel providing physical access to circuit components of the sample electronic module through the EVB baseplate from the second EVB side when the sample electronic module is installed on the module mount region.

A semiconductor device, having a substrate including an insulating plate and a circuit board provided on a front surface of the insulating plate. The circuit board has a first disposition area and a second disposition area with a gap therebetween, and a groove portion, of which a longitudinal direction is parallel to the gap, formed in the gap. The semiconductor device further includes a first semiconductor chip and a second semiconductor chip located on the circuit board in the first disposition area and the second disposition area, respectively, and a blocking member located in the gap across the groove portion in parallel to the longitudinal direction in a plan view of the semiconductor device.