The embodiments described herein provide radio frequency (RF) amplifiers, and in some embodiments provide amplifiers that can be used in high power RF applications. Specifically, the amplifiers described herein may be implemented with multiple resonant circuits to provide class F and inverse class F amplifiers and methods of operation. In general, the resonant circuits are implemented inside a device package with a transistor die to provide high efficiency amplification for a variety of applications.

The embodiments described herein provide radio frequency (RF) amplifiers, and in some embodiments provide amplifiers that can be used in high power RF applications. Specifically, the amplifiers described herein may be implemented with multiple resonant circuits to provide class F and inverse class F amplifiers and methods of operation. In general, the resonant circuits are implemented inside a device package with a transistor die to provide high efficiency amplification for a variety of applications.

Techniques for providing vertical integrations of semiconductor chips, magnetic chips, and lead frames. The techniques can include fabricating an integrated circuit (IC) device as a multi-layer IC structure that includes, within a sealed protective enclosure, a first layer including at least one magnetic chip, a second layer including at least one semiconductor chip or die, and a lead frame. The techniques can further include vertically bonding the magnetic chip in the first layer onto the topside of the lead frame, and vertically bonding the semiconductor chip or die in the second layer on top of the magnetic chip to form a multi-layer IC structure.

The embodiments described herein provide radio frequency (RF) amplifiers, and in some embodiments provide amplifiers that can be used in high power RF applications. Specifically, the amplifiers described herein may be implemented with multiple resonant circuits to provide class F and inverse class F amplifiers and methods of operation. In general, the resonant circuits are implemented inside a device package with a transistor die to provide high efficiency amplification for a variety of applications.

The embodiments described herein provide radio frequency (RF) amplifiers, and in some embodiments provide amplifiers that can be used in high power RF applications. Specifically, the amplifiers described herein may be implemented with multiple resonant circuits to provide class F and inverse class F amplifiers and methods of operation. In general, the resonant circuits are implemented inside a device package with a transistor die to provide high efficiency amplification for a variety of applications.

A micro-coaxial wire has an overall diameter in a range of 0.1 m-550 m, a conductive core of the wire has a cross-sectional diameter in a range of 0.05 m-304 m, an insulator is disposed on the conductive core with thickness in a range of 0.005 m-180 m, and a conductive shield layer is disposed on the insulator with thickness in a range of 0.009 m-99 m.

An apparatus is provided which comprises: a substrate; a stacked ring structure disposed on the substrate, the stacked ring structure comprising a first ring and a second ring; a first partial through-mold-via (TMV) formed on the first ring; and a second partial TMV formed on the second ring, wherein the first ring and the second ring are stacked such that the first partial TMV is aligned on top of the second partial TMV.

An apparatus is provided which comprises: a substrate; a stacked ring structure disposed on the substrate, the stacked ring structure comprising a first ring and a second ring; a first partial through-mold-via (TMV) formed on the first ring; and a second partial TMV formed on the second ring, wherein the first ring and the second ring are stacked such that the first partial TMV is aligned on top of the second partial TMV.

After a contact component is disposed in a concave joint space, when a solder solidifies, the solder thickness of the solder in the joint space is kept. Thus, a contact area between the contact component and the solder is kept, and the solder thickness of the solder that joins the contact component and a conductive pattern is kept. In addition, since an appropriate amount of the solder is kept in the joint space, an extra amount of solder does not need to be applied in advance. As a result, there is prevented creeping up of the solder into a hollow hole of the contact component, caused by the heat applied when the contact component is joined to the conductive pattern.

Some embodiments include a method, comprising: attaching a carrier substrate to a side of at least one semiconductor substrate, the at least one semiconductor substrate including photodetectors on the side; thinning the at least one semiconductor substrate while the at least one semiconductor substrate is attached to the carrier substrate; attaching an optical substrate to the at least one semiconductor substrate while the at least one semiconductor substrate is attached to the carrier substrate; and removing the carrier substrate from the at least one semiconductor substrate.