Embodiments include semiconductor packages and a method of forming the semiconductor packages. A semiconductor package includes a package substrate with a plurality of cavities, and a plurality of adhesives in the cavities of the package substrate. The semiconductor package also includes a plurality of stacked dies over the adhesives and the package substrate, where the stacked dies are coupled to the adhesives with spacers. The spacers may be positioned below outer edges of the stacked dies. The adhesives may include a plurality of films. The semiconductor package may further include a plurality of interconnects coupled to the stacked dies and package substrate, a plurality of electrical components on the package substrate, a mold layer over the stacked dies, interconnects, spacers, adhesives, and electrical components, and a plurality of adhesive layers coupled to the plurality of stacked dies, where one of the adhesive layers couples the stacked dies to the spacers.

A method of forming a flip-chip integrated circuit die that includes a front side including active circuitry formed therein and a plurality of bond pads in electrical communication with the active circuitry, at least two through-wafer vias in electrical communication with the active circuitry and extending at least partially though the die and having portions at a rear side of the die, and a bond wire external to the die and electrically coupling the portions of the at least two through-wafer vias to one another at the rear side of the die.

According to one embodiment, a semiconductor device includes a substrate, first stacked components, second stacked components, and a coating resin. The first stacked components include first chips and are stacked on a surface of the substrate. The second stacked components include second chips and are stacked on the surface. The coating resin covers the surface, the first stacked components, and the second stacked components. A first top surface of a second farthest one of the first chips away from the surface differs in position in a first direction from a second top surface of second farthest one of the second chips away from the surface.

Systems, methods, and devices for 3D packaging. In some embodiments, a semiconductor package includes a first die and a second die. The first die includes a first bonding pad on a top of the first die and near a first edge of the first die. The second die includes a second bonding pad on a top of the second die and near a second edge of the second die. A pillar is located on the second bonding pad. The first die is mounted on top of the second die such that the first edge is parallel to the second edge and offset from the second edge such that the pillar is exposed. A wire is bonded to a bonding surface of the pillar and bonded to a bonding surface of the first bonding pad.

According to one embodiment, a semiconductor device includes a substrate, first stacked components, second stacked components, and a coating resin. The first stacked components include first chips and are stacked on a surface of the substrate. The second stacked components include second chips and are stacked on the surface. The coating resin covers the surface, the first stacked components, and the second stacked components. A first top surface of a second farthest one of the first chips away from the surface differs in position in a first direction from a second top surface of second farthest one of the second chips away from the surface.

According to one embodiment, a wiring board, includes a conductive layer on a first surface and an insulating layer covering a portion of the conductive layer. The conductive layer includes a first connection portion exposed from the insulating layer and having a first wettability to solder, a lead-out portion connected to the first connection portion and exposed from the insulating layer and having a second wettability to solder, and a wiring portion connected to the first connection portion via the lead-out portion and covered with the insulating layer. In some examples, the first connection portion may be coated with a gold layer and the conductive layer may be copper or a copper alloy material.

Provided is a semiconductor package including a package substrate including a substrate pad, a first chip stacked structure including a first base chip mounted on an upper surface of the package substrate, and one or more first stacked chips sequentially offset-stacked along a first direction on the first base chip, a second chip stacked structure including a second base chip offset-stacked along the first direction on an upper surface of the first chip stacked structure, and one or more second stacked chips sequentially offset-stacked along the first direction on the second base chip, a bonding wire, and a first support mounted on the package substrate to be spaced apart from the first chip stacked structure in the first direction and supporting the second chip stacked structure, wherein the first support supports the second chip stacked structure by supporting a lower surface of the second base chip.

Systems and methods for providing a low profile stacked die semiconductor package in which a first semiconductor package is stacked with a second semiconductor package and both semiconductor packages are conductively coupled to an active silicon substrate that communicably couples the first semiconductor package to the second semiconductor package. The first semiconductor package may conductively couple to the active silicon substrate using a plurality of interconnects disposed in a first interconnect pattern having a first interconnect pitch. The second semiconductor package may conductively couple to the active silicon substrate using a plurality of interconnects disposed in a second interconnect pattern having a second pitch that is greater than the first pitch. The second semiconductor package may be stacked on the first semiconductor package and conductively coupled to the active silicon substrate using a plurality of conductive members or a plurality of wirebonds.

A method of making a secure integrated-circuit system comprises providing a first integrated circuit in a first die having a first die size and providing a second integrated circuit in a second die. The second die size is smaller than the first die size. The second die is transfer printed onto the first die and connected to the first integrated circuit, forming a compound die. The compound die is packaged. The second integrated circuit is operable to monitor the operation of the first integrated circuit and provides a monitor signal responsive to the operation of the first integrated circuit. The first integrated circuit can be constructed in an insecure facility and the second integrated circuit can be constructed in a secure facility.

In described examples, an integrated circuit includes a leadframe structure, which includes electrical conductors. A first coil structure is electrically connected to a first pair of the electrical conductors of the leadframe structure. The first coil structure is partially formed on a semiconductor die structure. A second coil structure is electrically connected to a second pair of the electrical conductors of the leadframe structure. The second coil structure is partially formed on the semiconductor die structure. A molded package structure encloses portions of the leadframe structure. The molded package structure exposes portions of the first and second pairs of the electrical conductors to allow external connection to the first and second coil structures. The molded package structure includes a cavity to magnetically couple portions of the first and second coil structures.