Provided is A metal paste for joints, containing: metal particles; and monovalent carboxylic acid having 1 to 9 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 μm to 0.8 ηm, and a content of the monovalent carboxylic acid having 1 to 9 carbon atoms is 0.015 part by mass to 0.2 part by mass with respect to 100 parts by mass of the metal particles.

A method for backside metallization includes inkjet printing a pattern of nanosilver conductive ink on a first surface of a silicon wafer. The silicon wafer includes a plurality of dies. The pattern includes a clearance area along a scribe line between the dies. A laser is focused, through a second surface of the wafer, at a point between the first surface of the silicon wafer and the second surface of the silicon wafer. The second surface is opposite the first surface. The dies are separated along the scribe line.

A multichip package and a method for manufacturing the same are provided. A multichip package includes: a plurality of semiconductor chips each mounted on corresponding lead frame pads; lead frames connected to the semiconductor chips by a bonding wire; and fixed frames integrally formed with at least one of the lead frame pads and configured to support the lead frame pads on a package-forming substrate.

In a semiconductor device, a first protection film covers an end portion of a first metal layer disposed on a semiconductor substrate, and has a first opening above the first metal layer. A second metal layer is disposed on the first metal layer in the first opening. An oxidation inhibition layer is disposed on the second metal layer in the first opening. A second protection film has a second opening and covers an end portion of the oxidation inhibition layer and the first protection film. The second protection film has an opening peripheral portion on a periphery of the second opening, and covers the end portion of the oxidation inhibition layer. An adhesion portion adheres to a portion of a lower surface of the opening peripheral portion. The adhesion portion has a higher adhesive strength with the second protection film than the oxidation inhibition layer.

An electrical connection structure includes a first metallic lead having a first contact area, a second metallic lead having a second contact area, and a connection region connecting the first and second leads with each other. The connection region includes a trench. The trench includes a planar rectangular horizontal floor surface and vertical walls adjacent to the planar rectangular floor surface.

A semiconductor device includes a support member, a first switching element, a second switching element, a first passive element, a second passive element, and an electrical conductor. The support member includes a plurality of wiring parts, and the plurality of wiring parts include a first wiring section and a second wiring section spaced apart from each other in a first direction perpendicular to the thickness direction of the support member. The first switching element is electrically connected to the first wiring section. The second switching element is electrically connected to the first switching element and the second wiring section. The first passive element has a first electrode and a second electrode, and the first electrode is bonded to the first wiring section. The second passive element has a third electrode and a fourth electrode, and the fourth electrode is bonded to the second wiring section. The electrical conductor connects the second electrode and the third electrode to each other. At least one of the first passive element and the second passive element is a capacitor.

A chip arrangement is provided. The chip arrangement may include a chip including a first main surface, wherein the first main surface includes an active area, a chip termination portion, and at least one contact pad. A first dielectric layer at least partially covers the chip termination portion and the active area, and at least partially exposes the at least one contact pad, and a second dielectric layer formed by atomic layer deposition over the first dielectric layer and over the at least one contact pad.

In some examples, a semiconductor package comprises a semiconductor die including a device side having a circuit formed therein and a conductive member coupled to the circuit and having multiple layers. The conductive member includes: a titanium tungsten layer coupled to the circuit; a copper seed layer coupled to the titanium tungsten layer; a copper layer coupled to the copper seed layer; a nickel tungsten layer coupled to the copper layer; and a plated layer coupled to the nickel tungsten layer. The semiconductor package includes a bond wire coupled to the plated layer; and a conductive terminal coupled to the bond wire and exposed to an exterior surface of the semiconductor package.

A semiconductor package includes a leadframe including a die pad and a plurality of leads including a first lead, wherein the first lead includes a first ball bond. A semiconductor die having a plurality of bond pads including a first bond pad is on the die pad including a second ball bond on the first bond pad and a stitch bond on the second ball bond. A first wirebond connection is between the first ball bond and the stitch bond.

A semiconductor device incudes: a semiconductor chip that includes an active area and an outer peripheral area surrounding the active area; a metal member that includes one face including a mounting portion on which the semiconductor chip is mounted and a peripheral member surrounding the mounting portion; a joining member that connects the semiconductor chip and the metal member; and a sealing resin body. The metal member includes, as the peripheral portion, an adhesive portion that surrounds the mounting portion and adheres to the sealing resin body, and a non-adhesive portion that is placed between the mounting portion and the adhesive portion. An entire width is placed in an area overlapping the semiconductor chip in a projection view in a thickness direction of the semiconductor chip.