According to the present invention, there is provided a resin composition for sealing containing (A) an epoxy resin; (B) a curing agent; and (C) a filler, wherein the epoxy resin (A) includes an epoxy resin (A-1) having a naphthyl ether skeleton, and wherein the resin composition for sealing satisfies the following Formula (1): Formula (1) E.sub.2×(α.sub.2×10.sup.−6)×(175−Tg)×η.sub.2≤0.3

wherein, in Formula (1), Tg (° C.) is a glass transition temperature of a cured product of the resin composition for sealing,
α.sub.2 (ppm/° C.) is a coefficient of linear expansion over a range from 190° C. to 230° C. of the cured product, and
E.sub.2 (MPa) is a hot elastic modulus at 260° C. of the cured product, and
η.sub.2 (MPa) is a rectangular pressure at 175° C. of the resin composition for sealing as measured by the following method;
(method)
the resin composition for sealing is injected, using a low-pressure transfer molding machine, into a rectangular-shaped flow channel having a width of 15 mm, a thickness of 1 mm, and a length of 175 mm under conditions of a mold temperature of 170° C. and an injection flow rate of 177 mm.sup.3/sec, a change in pressure over time is measured with a pressure sensor embedded at a position 25 mm away from an upstream tip of the flow channel, a lowest pressure (MPa) during a flow of the resin composition for sealing is measured, and the lowest pressure is regarded as the rectangular pressure.

A semiconductor device includes a first die pad, a second die pad, a first semiconductor element, a second semiconductor element, an insulating element, first terminals, second terminals, and a sealing resin. The sealing resin has a first side surface located on one side of a first direction, a second side surface located on the other side of the first direction, and third and fourth side surfaces that are separated from each other in a second direction orthogonal to both a thickness direction and the first direction and are connected to the first and second side surfaces. A first gate mark having a surface roughness larger than the other regions of the third side surface is formed on the third side surface. When viewed along the second direction, the first gate mark overlaps a pad gap provided between the first die pad and the second die pad in the first direction.

A semiconductor module is provided with: a case having a frame that surrounds a substrate and a terminal block formed extending inward from an inner wall surface of the frame; a terminal having one end extending outward from the frame, and another end extending inward from the frame and being secured to a top face of the terminal block; a wiring member that electrically connects the terminal and a semiconductor element on the substrate; and an encapsulating resin that encapsulates the other end of the terminal, the wiring member, and the semiconductor element inside the case. A hole is formed in the top face of the terminal block. The hole is filled with the encapsulating resin, and is positioned closer to the inner wall surface of the frame than a bonding part between the terminal and the wiring member.

A semiconductor module includes a conductive substrate, a plurality of first semiconductor elements, and a plurality of second semiconductor elements. The conductive substrate includes a first conductive portion to which the plurality of first semiconductor elements are electrically bonded, and a second conductive portion to which the plurality of second semiconductor elements are electrically bonded. The semiconductor module further includes a first input terminal, a second input terminal, and a third input terminal that are provided near the first conductive portion. The second input terminal and the third input terminal are spaced apart from each other with the first input terminal therebetween. The first input terminal is electrically connected to the first conductive portion. A polarity of the first input terminal is set to be opposite to a polarity of each of the second input terminal and the third input terminal.

A semiconductor device includes: an IC; a first lead having an island portion to which the IC is bonded; a second lead having a band-shaped portion; a plurality of additional leads spaced apart from the second lead with the first lead therebetween, and electrically connected to the IC; and a plurality of wires bonded to the IC and the plurality of additional leads. As viewed in the thickness direction, each of the additional leads has an edge facing the island portion. As viewed in the thickness direction, the band-shaped portion has a pair of elongated edges. As viewed in the thickness direction, the edge of the additional lead located closest to the band-shaped portion is positioned between the pair of elongated edges in a predetermined direction perpendicular to the thickness direction.

An electrical assembly that includes a semiconductor die, a heat sink and a case. The semiconductor die includes a power semiconductor device with a plurality of terminals, and a plurality of electrically conductive leads. Each of the electrically conductive leads is electrically coupled to an associated one of the terminals on the power semiconductor device. The heat sink has a base, a mount, and a plurality of fins. The mount extends from a first side of the base and is coupled to the semiconductor die. The fins are fixedly coupled to the base and extend from a second side of the base that is opposite the first side of the base. The case is formed of a first electrically insulating material. A first one of the leads is integrally and unitarily formed with the mount.

The semiconductor device includes a semiconductor element, a first lead, and a second lead. The semiconductor element has an element obverse surface and an element reverse surface spaced apart from each other in a thickness direction. The semiconductor element includes an electron transit layer disposed between the element obverse surface and the element reverse surface and formed of a nitride semiconductor, a first electrode disposed on the element obverse surface, and a second electrode disposed on the element reverse surface and electrically connected to the first electrode. The semiconductor element is mounted on the first lead, and the second electrode is joined to the first lead. The second lead is electrically connected to the first electrode. The semiconductor element is a transistor. The second lead is spaced apart from the first lead and is configured such that a main current to be subjected to switching flows therethrough.

A semiconductor device includes a semiconductor element, first and second leads, and a sealing resin. The semiconductor element includes first and second electrodes. The first lead includes a mounting base having a main face to which the first electrode is bonded and a back face, and includes a first terminal connected to the first electrode. The second lead includes a second terminal connected to the second electrode. The sealing resin includes a main face and a back face opposite to each other, and includes an end face oriented in the protruding direction of the terminals. The back face of the mounting base is exposed from the back face of the resin. The sealing resin includes a groove formed in its back face and disposed between the back face of the mounting base and a boundary between the second terminal and the end face of the resin.

The present disclosure relates to a power module comprising a substrate, first and second pluralities of vertical power devices, and first and second terminal assemblies. The substrate has a top surface with a first trace and a second trace. The first plurality of vertical power devices and a second plurality of vertical power devices are electrically coupled to form part of a power circuit. The first plurality of vertical power devices are electrically and mechanically directly coupled between the first trace and a bottom of a first elongated bar of the first terminal assembly. The second plurality of vertical power devices are electrically and mechanically directly coupled between the second trace and a bottom of a second elongated bar of the second terminal assembly.

The present disclosure describes a power module having a substrate, first and second pluralities of vertical power devices, and first and second terminal assemblies. The substrate has a top surface with a first trace and a second trace. The first plurality of vertical power devices and the second plurality of vertical power devices are electrically coupled to form part of a power circuit. The first plurality of vertical power devices is electrically and mechanically directly coupled between the first trace and a bottom of a first elongated bar of the first terminal assembly. The second plurality of vertical power devices are electrically and mechanically directly coupled between the second trace and a bottom of a second elongated bar of the second terminal assembly.