Example embodiments relate to amplifiers having improved stability. One example amplifier includes a conductive substrate, an input terminal arranged spaced apart from the conduct substrate, a first bondwire attachment structure electrically connected to or integrally formed with the input terminal, a first input matching capacitor having a non-grounded terminal and a grounded terminal, a second bondwire attachment structure electrically connected to the non-grounded terminal of the first input matching capacitor, a first semiconductor die on which a radiofrequency power transistor is arranged that has an output electrically connected to a fourth bondwire attachment structure, an output matching capacitor having a non-grounded terminal and a grounded terminal (the non-grounded terminal being electrically connected to a fifth bondwire attachment structure), an output terminal arranged spaced apart from the conductive substrate, a sixth bondwire attachment structure electrically connected to or integrally formed with the output terminal, and multiple bondwire assemblies.

An electronic device has a substrate and first and second metallization levels with a resonant circuit. The first metallization level has a first dielectric layer on a side of the substrate, and a first metal layer on the first dielectric layer. The second metallization level has a second dielectric layer on the first dielectric layer and the first metal layer, and a second metal layer on the second dielectric layer. The electronic device includes a first plate in the first metal layer, and a second plate spaced apart from the first plate in the second metal layer to form a capacitor. The electronic device includes a winding in one of the first and second metal layers and coupled to one of the first and second plates in a resonant circuit.

Provided is a heat sink having a clad structure of Co—Mo composite materials and Cu materials, satisfying high heat-sink properties required of the heat sink for use in a semiconductor package with a frame on which a high-output and small-sized semiconductor is mounted, and preventing, when applied to the semiconductor package with a frame, crack of the frame due to local stress concentration. The heat sink has three or more Cu layers and two or more Cu—Mo composite layers alternately stacked in a thickness direction so that the Cu layers are outermost layers on both sides thereof, the Cu layers as the outermost layers each having a thickness t.sub.1 of 40 μm or more, the heat sink satisfying 0.06≤t.sub.1/T≤0.27 (where T: heat sink thickness) and t.sub.2/T≤0.36/[(total number of layers−1)/2] (where t.sub.2: Cu—Mo composite layer thickness, the total number of layers: sum of numbers of Cu layers and Cu—Mo composite layers).

Provided is a heat sink having a clad structure of Co—Mo composite materials and Cu materials, satisfying high heat-sink properties required of the heat sink for use in a semiconductor package with a frame on which a high-output and small-sized semiconductor is mounted, and preventing, when applied to the semiconductor package with a frame, crack of the frame due to local stress concentration. The heat sink has three or more Cu layers and two or more Cu—Mo composite layers alternately stacked in a thickness direction so that the Cu layers are outermost layers on both sides thereof, the Cu layers as the outermost layers each having a thickness t.sub.1 of 40 μm or more, the heat sink satisfying 0.06≤t.sub.1/T≤0.27 (where T: heat sink thickness) and t.sub.2/T≤0.36/[(total number of layers−1)/2] (where t.sub.2: Cu—Mo composite layer thickness, the total number of layers: sum of numbers of Cu layers and Cu—Mo composite layers).

A first transistor chip (3) includes a first drain pad (5). A second transistor chip (4) includes a second drain pad (6). A transmission line (9) and a first capacitor (C1) are formed on a resin substrate (1). A first bonding wire (7) connects the first drain pad (5) and one end of the transmission line (9). A second bonding wire (10) connects the second drain pad (6) and one end of the first capacitor (C1). An output terminal (OUT) is connected to the other end of the transmission line (9) and the other end of the first capacitor (C1). A capacitance value of the first capacitor (C1) is selected so as to cause resonance with inductance of the second bonding wire (10).

Millimeter wave (mmWave) technology, apparatuses, and methods that relate to transceivers, receivers, and antenna structures for wireless communications are described. The various aspects include co-located millimeter wave (mmWave) and near-field communication (NFC) antennas, scalable phased array radio transceiver architecture (SPARTA), phased array distributed communication system with MIMO support and phase noise synchronization over a single coax cable, communicating RF signals over cable (RFoC) in a distributed phased array communication system, clock noise leakage reduction, IF-to-RF companion chip for backwards and forwards compatibility and modularity, on-package matching networks, 5G scalable receiver (Rx) architecture, among others.

An embodiment of the present disclosure provides a new integrated package electronic device structure, including a packaging component, including a packaging frame and a packaging substrate, and at least two circuit modules, being packaged on one side of the packaging substrate within the packaging frame, wherein the packaging frame including a merge point for the at least two circuit modules. In the present disclosure, by setting the merge points of at least two circuits packaged within the packaging frame on the packaging frame, the problem of occupying a large area when the integrated electronic device is applied due to setting the merge points on the packaging substrate is avoided, the utilization rate of the integrated electronic device is improved, and the integration and industrialization of the electronic device is facilitated.

Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components may further be configured to control application of RF energy in cycles between high and low powers. The power amplifier electronics may include a semiconductor die on which one or more RF power transistors are fabricated, an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab, and bonding wires bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network. The bonding wires may be copper bonding wires having a diameter of between about 10 microns and about 100 microns.

In embodiments, it is provided an integrated device for providing a measure of a quantity dependent on current through an electrical conductor, having: a sensing and processing sub-system; an electrical conductor to conduct a current; an insulating material encapsulating the sensing and processing sub-system and maintaining the electrical conductor in a fixed and spaced relationship to the sensing and processing sub-system, wherein the insulating material is configured to insulate the electrical conductor from the sensing and processing sub-system; sensing circuitry comprising a plurality of magnetic field sensing elements arranged on the sensing and processing sub-system adjacent to the electrical conductor, wherein the sensing circuitry is configured to provide a measure of the quantity as a weighted sum and/or difference of outputs of the magnetic field sensing elements caused by the current flowing through the electrical conductor adjacent to the plurality of magnetic field sensing elements; a voltage sensing input for sensing a measure of voltage associated with the current conductor; and output circuitry on the sensing and processing sub-system arranged to provide an output measure of the quantity from the sensed measure of current and sensed measure of voltage.

Example embodiments relate to amplifiers haying improved stability. One example amplifier includes a conductive substrate, an input terminal arranged spaced apart from the conduct substrate, a first bondwire attachment structure electrically connected to or integrally formed with the input terminal, a first input matching capacitor having a non-grounded terminal and a grounded terminal, a second bondwire attachment structure electrically connected to the non-grounded terminal of the first input matching capacitor, a first semiconductor die on which a radiofrequency power transistor is arranged that has an output electrically connected to a fourth bondwire attachment structure, an output matching capacitor having a non-grounded terminal and a grounded terminal (the non-grounded terminal being electrically connected to a fifth bondwire attachment structure), an output terminal arranged spaced apart from the conductive substrate, a sixth bondwire attachment structure electrically connected to or integrally formed with the output terminal, and multiple bondwire assemblies.