H01L2224/48225

CHARGED-PARTICLE DETECTOR PACKAGE FOR HIGH SPEED APPLICATIONS
20220393057 · 2022-12-08 · ·

A charged particle beam system may include a detector. A package for a detector may have a package body that includes two sets of pins, each of the sets of pins including two pins. Each pin of the sets of pins may be configured to be connected to one of two terminals of a sensing element. Pins of different sets may be configured to be connected to a different one of the two terminals of the diode. The sets of pins may be arranged with a symmetry such that magnetic fields generated when current passes through the sets of pins is reduced due to the symmetry.

ELECTROMAGNETIC INTERFERENCE SHIELDING PACKAGE STRUCTURES AND FABRICATING METHODS THEREOF

The present disclosure provides a semiconductor structure, comprising a die/die stack attached on a substrate, a conductive top block covering a top surface of the die/die stack, and a plurality of ground wires conductively connect the conductive top block and to the substrate. The conductive top block, the plurality of ground wires, and the substrate form a Faraday cage to provide an electromagnetic interference shielding of the die/die stack.

Semiconductor Device with Improved Performance in Operation and Improved Flexibility in the Arrangement of Power Chips
20220384305 · 2022-12-01 ·

A device includes an interposer including an insulative layer between a lower metal layer and a first upper metal layer and a second upper metal layer, a semiconductor transistor die attached to the first upper metal layer and comprising a first lower main face and a second upper main face, with a drain or collector pad on the first main face and electrically connected to the first upper metal layer, a source or emitter electrode pad and a gate electrode pad on the second main face, a leadframe connected to the interposer and comprising a first lead connected with the first upper metal layer, a second lead connected with the source electrode pad, and a third lead connected with the second upper metal layer, and wherein an electrical connector that is connected between the gate electrode pad and the second upper metal layer is orthogonal to a first electrical connector.

FARADAY CAGE PLASTIC CAVITY PACKAGE WITH PRE-MOLDED CAVITY LEADFRAME
20220384362 · 2022-12-01 ·

A Faraday cage cavity package, having: a leadframe; a plastic body molded onto the leadframe to form a cavity exposing top surfaces of a die attach paddle, tie bars and lead fingers of the leadframe within the cavity; and a lid attached onto the top of the leadframe to protect a die attached to the die attach pad from electromagnetic fields, wherein the Faraday cage cavity package is manufactured in a matrix format and then separated into a plurality of individual Faraday cage cavity package units.

Semiconductor device

A semiconductor device, having a first semiconductor chip including a first side portion at a front surface thereof and a first control electrode formed in the first side portion, a second semiconductor chip including a second side portion at a front surface thereof and a second control electrode formed in the second side portion, a first circuit pattern, on which the first semiconductor chip and the second semiconductor chip are disposed, a second circuit pattern, and a first control wire electrically connecting the first control electrode, the second control electrode, and the second circuit pattern. The first side portion and the second side portion are aligned. The first control electrode and the second control electrode are aligned. The second circuit pattern are aligned with the first control electrode and the second control electrode.

STACKED SEMICONDUCTOR DEVICE
20220375900 · 2022-11-24 · ·

A stacked semiconductor device includes a plurality of stacked semiconductor dies electrically connected with each other, a first power line electrically connected to a lowermost semiconductor die among the stacked semiconductor dies, a second power line formed over an uppermost semiconductor die among the stacked semiconductor dies, and an external connection line electrically connecting the first power line and the second power line.

INTEGRATED CIRCUIT PACKAGE STRUCTURE WITH CONDUCTIVE STAIR STRUCTURE AND METHOD OF MANUFACTURING THEREOF
20220375837 · 2022-11-24 ·

An integrated circuit package structure includes a circuit board, an integrated circuit die and a conductive stair structure. The circuit has an upper surface. The integrated circuit die is located on the upper surface of the circuit board. The conductive stair structure is located on the upper surface of the circuit board. The conductive stair structure includes steps along a first direction substantially perpendicular to the upper surface of the circuit board. The steps have different heights relative to the upper surface of the circuit board.

METAL JOINTED BODY, SEMICONDUCTOR DEVICE, WAVE GUIDE TUBE, AND METHOD FOR JOINING MEMBERS TO BE JOINED

Provided is a metal jointed body, joined by solid-phase joining in the atmosphere, in which no protrusion of molten joining material occurs, that improves dimensional stability. A metal jointed body is formed by (A) making Ag films of two metal laminated bodies opposed to each other, the metal jointed body being configured by sequentially laminating a Zn film and an Ag film on an Al substrate serving as a member to be joined, and (B) bringing the Ag films into contact with each other, then (C) heating is performed while pressurizing, and closely adhering and solid-phase joining the Ag films to each other. The completed metal jointed body is a portion where Al—Ag alloy layers are provided on both sides of an Ag—Zn—Al alloy layer to join the Al substrates to each other.

SEMICONDUCTOR PACKAGES
20230058485 · 2023-02-23 · ·

A semiconductor package includes a second semiconductor die stacked on a first semiconductor die. The first semiconductor die includes a first contact pad connected to a first integrated circuit, and includes a second contact pad connected to a third contact pad by a first interconnection line. The second semiconductor die includes a fourth contact pad connected to the third contact pad and connected to a second integrated circuit. A first bonding wire is connected to the first contact pad, and a second bonding wire is connected to the second contact pad.

INTEGRATED CIRCUIT PACKAGE WITH HEAT TRANSFER CHIMNEY INCLUDING THERMALLY CONDUCTIVE NANOPARTICLES
20230055102 · 2023-02-23 · ·

An electronic device includes an integrated circuit package including a die mounted on a die carrier, a mold structure at least partially encapsulating the mounted die, and a heat transfer chimney formed on the die. The heat transfer chimney extends at least partially through the mold structure to transfer heat away from the die. The heat transfer chimney is formed from a thermally conductive compound including thermally conductive nanoparticles.