An integrated circuit has an isolation capacitor structure that reduces the risk of breakdown from high electric fields at the edge of the top metal plate of the capacitor. The capacitor structure includes a bottom metal plate above a substrate. A first dielectric layer of a first dielectric material is formed between the bottom metal plate and the top metal plate. The capacitor structure also includes a thin narrow ring formed of a second dielectric material located under a portion of the top metal plate. The second dielectric material has a higher dielectric constant than the first dielectric material. The thin narrow ring follows the shape of the edge of the top metal plate with a portion of the ring underneath the top metal plate and a portion outside the edge of the top metal plate to thereby be located at a place of the maximum electric field.

A multiple-path amplifier (e.g., a Doherty amplifier) includes a first transistor (e.g., a main amplifier FET), a second transistor (e.g., a peaking amplifier FET), a combining node, and a shunt-inductance circuit. The first and second amplifiers and the combining node structure are integrally-formed with a semiconductor die, and the shunt-inductance circuit is integrated with the die. Outputs of the first and second transistors are electrically coupled to the combining node structure. The shunt-inductance circuit is electrically coupled between the combining node structure and a ground reference node. The shunt-inductance circuit includes a shunt inductance (e.g., including wirebond(s) and/or spiral inductor(s)) that is integrated with the semiconductor die. The multiple-path amplifier also may include an integrated phase shifter/impedance inverter coupled between the outputs of the first and second transistors, and which is configured to impart a 90-degree phase delay between intrinsic drains of the first and second transistors.

A semiconductor device according to the present disclosure includes: a semiconductor chip including a first supply terminal and a second supply terminal; a passive element provided on the semiconductor chip, the passive element including a first electrode, a dielectric provided on the first electrode, and a second electrode provided on the dielectric; a first wiring which electrically connects the first supply terminal and the first electrode to each other; and a second wiring which electrically connects the second supply terminal and the second electrode to each other.

A microphone package structure includes a substrate, a metal housing, a MEMS microphone component and at least one integrated circuit component. The substrate has a first surface and a second surface that are opposite to each other. The metal housing is located on the first surface such that the substrate and the metal housing collectively define a hollow chamber. The MEMS microphone component is located on the metal housing and within the hollow chamber. The at least one integrated circuit component is located within a region of the second surface on which the metal housing has a vertical projection.

A multiple-path amplifier (e.g., a Doherty amplifier) includes a first transistor (e.g., a main amplifier FET), a second transistor (e.g., a peaking amplifier FET), a combining node, and a shunt-inductance circuit. The first and second amplifiers and the combining node structure are integrally-formed with a semiconductor die, and the shunt-inductance circuit is integrated with the die. Outputs of the first and second transistors are electrically coupled to the combining node structure. The shunt-inductance circuit is electrically coupled between the combining node structure and a ground reference node. The shunt-inductance circuit includes a shunt inductance (e.g., including wirebond(s) and/or spiral inductor(s)) that is integrated with the semiconductor die. The multiple-path amplifier also may include an integrated phase shifter/impedance inverter coupled between the outputs of the first and second transistors, and which is configured to impart a 90-degree phase delay between intrinsic drains of the first and second transistors.

A packaged semiconductor chip includes a power amplifier die including a semiconductor substrate, and an input contact pad, an output contact pad, first and second direct-current (DC) contact pads, one or more transistors having an input coupled to the input contact pad, and an input bias coupling path electrically coupling the first DC contact pad to the second DC contact pad and the input contact pad implemented on the semiconductor substrate. The chip further includes a lead frame having one or more radio-frequency input pins electrically coupled to the input contact pad, one or more radio-frequency output pins electrically coupled to the output contact pad, and first and second input bias pins electrically coupled to the first and second DC contact pads, respectively.

The present invention relates to an integrated circuit package comprising at least one substrate, each substrate including at least one layer, at least one semiconductor die, at least one terminal, and an antenna located in the integrated circuit package, but not on said at least one semiconductor die. The conducting pattern comprises a curve having at least five sections or segments, at least three of the sections or segments being shorter than one-tenth of the longest free-space operating wavelength of the antenna, each of the five sections or segments forming a pair of angles with each adjacent segment or section, wherein the smaller angle of each of the four pairs of angles between sections or segments is less than 180 (i.e., no pair of sections or segments define a longer straight segment), wherein at least two of the angles are less than 115, wherein at least two of the angles are not equal, and wherein the curve fits inside a rectangular area the longest edge of which is shorter than one-fifth of the longest free-space operating wavelength of the antenna.

An electronic package structure includes a first printed circuit board, a second printed circuit board and first space columns. The first printed circuit board has a first surface and a through hole. The second printed circuit board has a second surface facing the first surface. Each first space column is interconnected between the first surface and the second surface. An encapsulation layer is filled between the first and second printed circuit boards and among the first space columns so as to define a hollow chamber. A MEMS microphone component located within the hollow chamber is located on the first surface and aligned with the through hole. A sensing component is located within the hollow chamber.

A microphone package structure includes a substrate, a metal housing, a MEMS microphone component and at least one integrated circuit component. The substrate has a first surface and a second surface that are opposite to each other. The metal housing is located on the first surface such that the substrate and the metal housing collectively define a hollow chamber. The MEMS microphone component is located on the metal housing and within the hollow chamber. The at least one integrated circuit component is located within a region of the second surface on which the metal housing has a vertical projection.

Techniques for providing vertical integrations of semiconductor chips, magnetic chips, and lead frames. The techniques can include fabricating an integrated circuit (IC) device as a multi-layer IC structure that includes, within a sealed protective enclosure, a first layer including at least one magnetic chip, a second layer including at least one semiconductor chip or die, and a lead frame. The techniques can further include vertically bonding the magnetic chip in the first layer onto the topside of the lead frame, and vertically bonding the semiconductor chip or die in the second layer on top of the magnetic chip to form a multi-layer IC structure.