An integrated circuit (IC) package comprises a semiconductor die, a leadframe comprising a plurality of leads coupled to bond pads on the semiconductor die, and an electrically conductive member electrically coupled to the leadframe. A magnetic mold compound encapsulates the electrically conductive member to form an inductor. A non-magnetic mold compound encapsulates the semiconductor die, the leadframe, and the magnetic mold compound.

A packaged integrated circuit (IC) includes a leadframe including a die pad and leads around the die pad, an analog IC die having first bond pads on its active top side, and a second circuit including second circuit bond pads attached to the analog IC die by an attachment layer configured as a ring with a hollow center that provides an inner gap. A bottom side of the analog IC or the second circuit is attached to the die pad. Bond wires couple at least some of the first bond pads or some of the second circuit bond pads to the leads, and there is a second coupling between others of the second circuit bond pads and others of the first bond pads. A mold compound is for encapsulating the second circuit and the analog IC.

The present invention relates to an integrated circuit package comprising at least one substrate, each substrate including at least one layer, at least one semiconductor die, at least one terminal, and an antenna located in the integrated circuit package, but not on said at least one semiconductor die. The conducting pattern comprises a curve having at least five sections or segments, at least three of the sections or segments being shorter than one-tenth of the longest free-space operating wavelength of the antenna, each of the five sections or segments forming a pair of angles with each adjacent segment or section, wherein the smaller angle of each of the four pairs of angles between sections or segments is less than 180 (i.e., no pair of sections or segments define a longer straight segment), wherein at least two of the angles are less than 115, wherein at least two of the angles are not equal, and wherein the curve fits inside a rectangular area the longest edge of which is shorter than one-fifth of the longest free-space operating wavelength of the antenna.

A resonator device includes first and second resonators and an integrated circuit. The integrated circuit includes first and second oscillation circuits that oscillate first and second resonators, first and second terminals connected to the first oscillation circuit, and third and fourth terminals connected to the second oscillation circuit. The first terminal of the integrated circuit and one electrode of the first resonator are connected to each other via a bump. The third terminal and one electrode of the second resonator are connected to each other via a bump. In a plan view, at least a portion of the first resonator overlaps the first oscillation circuit and at least a portion of the second resonator overlaps the second oscillation circuit.

The present invention relates to an integrated circuit package comprising at least one substrate, each substrate including at least one layer, at least one semiconductor die, at least one terminal, and an antenna located in the integrated circuit package, but not on said at least one semiconductor die. The conducting pattern comprises a curve having at least five sections or segments, at least three of the sections or segments being shorter than one-tenth of the longest free-space operating wavelength of the antenna, each of the five sections or segments forming a pair of angles with each adjacent segment or section, wherein the smaller angle of each of the four pairs of angles between sections or segments is less than 180 (i.e., no pair of sections or segments define a longer straight segment), wherein at least two of the angles are less than 115, wherein at least two of the angles are not equal, and wherein the curve fits inside a rectangular area the longest edge of which is shorter than one-fifth of the longest free-space operating wavelength of the antenna.

An IGBT die structure includes an auxiliary P well region. A terminal, that is not connected to any other IGBT terminal, is coupled to the auxiliary P well region. To accelerate IGBT turn on, a current is injected into the terminal during the turn on time. The injected current causes charge carriers to be injected into the N drift layer of the IGBT, thereby reducing turn on time. To accelerate IGBT turn off, charge carriers are removed from the N drift layer by drawing current out of the terminal. To reduce V.sub.CE(SAT), current can also be injected into the terminal during IGBT on time. An IGBT assembly involves the IGBT die structure and an associated current injection/extraction circuit. As appropriate, the circuit injects or extracts current from the terminal depending on whether the IGBT is in a turn on time or is in a turn off time.

A packaged integrated circuit (IC) includes a leadframe including a die pad. The packaged IC also includes a first circuit on the die pad, the first circuit having a region. The packaged IC also includes a second circuit on the first circuit, the second circuit being spaced from the region by a gap. The packaged IC also includes an attachment layer between the first and second circuits, the attachment layer and the first and second circuits enclosing at least a part of the gap over the region. The packaged IC also includes a mold compound encapsulating the first and second circuits, the attachment layer, and the at least part of the gap.

A semiconductor package assembly includes a first substrate. A first semiconductor die is disposed on the first substrate. A passive device is located directly on the first semiconductor die. The passive device is disposed within a boundary of the first semiconductor die in a plan view.

A disclosed circuit arrangement includes adhesive transfer tape, and an electronic device attached to adhesive of the adhesive transfer tape. First and second cross wires are attached to the adhesive and are disposed proximate the electronic device. One or more wire segments are attached to the adhesive and have first and second portions attached at a third portion of the first cross wire and at a fourth portion of the second cross wire, respectively. The first and second cross wires and the one or more wire segments have round cross sections, the first portion and the third portion have flat areas of contact, and the second and fourth portions have flat areas of contact. First and second bond wires are connected to the electronic device and to the first and second portions of the one or more wire segments, respectively.

A packaged semiconductor chip includes a semiconductor sub strate having formed thereon: radio-frequency (RF) input and output contact pads, DC contact pads, and first and second amplifier stages. An input of the first amplifier stage is coupled with the RF input contact pad. An input and an output of the second amplifier stage are respectively coupled to an output of the first amplifier stage and the RF output contact pad. The DC contact pads and the input of the first amplifier stages are connected via an input bias coupling path. The outputs of the amplifier stages are connected via an output bias coupling path. The chip further includes a lead frame having RF input and output pins electrically coupled to the RF input and output contact pads, and input bias pins electrically coupled to the DC contact pad.