Disclosed is a semiconductor device that is capable of handling multiple different high-frequency contactless communication modes and that is formed by a multi-chip structure. A first semiconductor chip, which performs interface control of high-frequency contactless communication and data processing of communications data, is mounted on a wiring board; and a second semiconductor chip, which performs another data processing of the communication data, is mounted on the first semiconductor chip. In this case, transmission pads in the first semiconductor chip are arranged at positions farther from a periphery of the chip than those of receiving pads, and the second semiconductor chip is mounted by being biased on the first semiconductor chip so as to keep away the transmission pads.

A semiconductor device includes a die pad, a semiconductor chip with a bonding pad being formed, a lead one end of which is located in the vicinity of the semiconductor chip, a coupling wire that connects an electrode and the lead, and a sealing body that seals the semiconductor chip, the coupling wire, a part of the lead, and a part of the die pad. A lower surface of the die pad is exposed from a lower surface of the sealing body, the die pad and the coupling wire are comprised of copper, and a thickness of the semiconductor chip is larger than the sum of a thickness of the die pad and a thickness from an upper surface of the semiconductor chip to an upper surface of the sealing body.

Disclosed is a semiconductor device that is capable of handling multiple different high-frequency contactless communication modes and that is formed by a multi-chip structure. A first semiconductor chip, which performs interface control of high-frequency contactless communication and data processing of communications data, is mounted on a wiring board; and a second semiconductor chip, which performs another data processing of the communication data, is mounted on the first semiconductor chip. In this case, transmission pads in the first semiconductor chip are arranged at positions farther from a periphery of the chip than those of receiving pads, and the second semiconductor chip is mounted by being biased on the first semiconductor chip so as to keep away the transmission pads.

A semiconductor device includes a die pad, a semiconductor chip with a bonding pad being formed, a lead one end of which is located in the vicinity of the semiconductor chip, a coupling wire that connects an electrode and the lead, and a sealing body that seals the semiconductor chip, the coupling wire, a part of the lead, and a part of the die pad. A lower surface of the die pad is exposed from a lower surface of the sealing body, the die pad and the coupling wire are comprised of copper, and a thickness of the semiconductor chip is larger than the sum of a thickness of the die pad and a thickness from an upper surface of the semiconductor chip to an upper surface of the sealing body.

A semiconductor device with an improved arithmetic processing speed and a decreased circuit size, and its driving method are provided. In the semiconductor device, a first terminal of a first transistor and a gate of a second transistor are electrically connected to a first terminal of a capacitor, and a control circuit is electrically connected to a second terminal of the capacitor. The control circuit supplies a first potential to the second terminal of the capacitor, in other words, adds a value corresponding to the first potential to the value of first data previously retained in the gate of the second transistor in order to obtain second data. In the second transistor, the second data, specifically, a third potential commensurate with the potential of the gate will be output from a second terminal when a second potential is supplied to a first terminal.

Disclosed is a semiconductor device that is capable of handling multiple different high-frequency contactless communication modes and that is formed by a multi-chip structure. A first semiconductor chip, which performs interface control of high-frequency contactless communication and data processing of communications data, is mounted on a wiring board; and a second semiconductor chip, which performs another data processing of the communication data, is mounted on the first semiconductor chip. In this case, transmission pads in the first semiconductor chip are arranged at positions farther from a periphery of the chip than those of receiving pads, and the second semiconductor chip is mounted by being biased on the first semiconductor chip so as to keep away the transmission pads.

A semiconductor device includes a die pad, a semiconductor chip with a bonding pad being formed, a lead one end of which is located in the vicinity of the semiconductor chip, a coupling wire that connects an electrode and the lead, and a sealing body that seals the semiconductor chip, the coupling wire, a part of the lead, and a part of the die pad. A lower surface of the die pad is exposed from a lower surface of the sealing body, the die pad and the coupling wire are comprised of copper, and a thickness of the semiconductor chip is larger than the sum of a thickness of the die pad and a thickness from an upper surface of the semiconductor chip to an upper surface of the sealing body.

An electrical interconnection includes a wire loop having a first end bonded to a first bonding site using a first bonding portion, and a second end bonded to a second bonding site using a second bonding portion. The second bonding portion includes a folded portion having a wire that extends from the second end of the wire loop and is folded on the second bonding site. The folded portion includes a first folded portion connected to the second end of the wire loop and extending toward the first bonding site, a second folded portion provided on the first folded portion, and a tail protruding from a portion of the second folded portion. An interface is formed between the first and second folded portions. A top surface of the second folded portion includes an inclined surface recessed toward the first folded portion.

A semiconductor device with an improved arithmetic processing speed and a decreased circuit size, and its driving method are provided. In the semiconductor device, a first terminal of a first transistor and a gate of a second transistor are electrically connected to a first terminal of a capacitor, and a control circuit is electrically connected to a second terminal of the capacitor. The control circuit supplies a first potential to the second terminal of the capacitor, in other words, adds a value corresponding to the first potential to the value of first data previously retained in the gate of the second transistor in order to obtain second data. In the second transistor, the second data, specifically, a third potential commensurate with the potential of the gate will be output from a second terminal when a second potential is supplied to a first terminal.

According to one embodiment, a semiconductor device includes: a substrate; a first electrode provided on the substrate; a second electrode provided on the substrate distant from the first electrode; and a sheet-like conductive sheet configured to connect the first electrode and the second electrode, in which the conductive sheet includes a first fixing portion connected to the first electrode, a second fixing portion connected to the second electrode, and a wiring portion positioned between the first fixing portion and the second fixing portion, having a length in a first direction from the substrate toward the first electrode that is longer than a length of the first fixing portion in the first direction, and having a convex shape with its central part is curving away from the second fixing portion at a first end that is connected to the first fixing portion.