Disclosed is a semiconductor package comprising a first semiconductor chip on a substrate, a second semiconductor chip between the substrate and the first semiconductor chip, and a spacer between the substrate and the first semiconductor chip. The substrate includes a first substrate pad between the second semiconductor chip and the spacer. The second semiconductor chip includes a chip pad and a signal wire. The spacer includes a first dummy pad on the spacer and a first dummy wire coupled to the first dummy pad. The first dummy pad is adjacent to the second semiconductor chip. The first semiconductor chip is attached to the second semiconductor chip and the spacer by an adhesive layer on the first semiconductor chip. A portion of each of the signal wire and the first dummy wire are in the adhesive layer.

Provided is a semiconductor apparatus comprising: a semiconductor substrate; an element electrode provided above the semiconductor substrate; an element electrode pad electrically connected to the element electrode; and a wire configured to connect to the element electrode pad at a plurality of connection points, wherein the semiconductor substrate includes an emitter region of a first conductivity type arrayed in an array direction, the emitter region facing the element electrode on an upper surface of the semiconductor substrate, wherein a density of the emitter region below a connection point of any of the wires is different from a density of the emitter region below a connection point of any other of the wires.

Leadless power amplifier (PA) packages and methods for fabricating leadless PA packages having topside terminations are disclosed. In embodiments, the method includes providing electrically-conductive pillar supports and a base flange. At least a first radio frequency (RF) power die is attached to a die mount surface of the base flange and electrically interconnected with the pillar supports. Pillar contacts are further provided, with the pillar contacts electrically coupled to the pillar supports and projecting therefrom in a package height direction. The first RF power die is enclosed in a package body, which at least partially defines a package topside surface opposite a lower surface of the base flange. Topside input/out terminals are formed, which are accessible from the package topside surface and which are electrically interconnected with the first RF power die through the pillar contacts and the pillar supports.

An isolation system and isolation device are disclosed. An illustrative isolation device is disclosed to include a transmitter circuit, a detector circuit, a first wire bond, and a second wire bond. The detector circuit is configured to generate a first current in accordance with a first signal. The first wire bond is configured to receive the first current from the transmitter circuit to generate a magnetic flux. The second wire bond is configured to receive the magnetic flux. An induced current in the second wire bond is then detected in the detector circuit. The detector circuit is configured to generate a reproduced first signal, as an output of the detector circuit.

In some embodiments, the present application provides a method for manufacture a memory device. The method includes forming a multilayer stack including a first magnetic layer and a first dielectric layer and forming another magnetic layer. The multilayer stack and the another magnetic layer are tailored to meet dimensions of a package structure. The package structure includes a chip having a memory cell and an insulating material enveloping the chip, where an outer surface of the package structure comprises the insulating material. The tailored multilayer stack and the tailored another magnetic layer are attached to the outer surface of the package structure.

A semiconductor device includes: a signal input circuit that receives a signal from an outside; a signal output circuit that outputs the signal to the outside; a coupling element connected between the signal input circuit and the signal output circuit; an inspection output circuit that causes the signal input circuit to output an inspection signal to the outside not via the coupling element or an inspection input circuit that causes the signal output circuit to receive the inspection signal from the outside not via the coupling element. The signal input circuit, the signal output circuit, and the coupling element are formed on a semiconductor chip and packaged.

A semiconductor device is disclosed including a die stack including a number of dies aligned with each other with respect to an axis, and a top die that is offset along the axis the to prevent die cracking.

Disclosed is a semiconductor package comprising a first semiconductor chip on a substrate, a second semiconductor chip between the substrate and the first semiconductor chip, and a spacer between the substrate and the first semiconductor chip. The substrate includes a first substrate pad between the second semiconductor chip and the spacer. The second semiconductor chip includes a chip pad and a signal wire. The spacer includes a first dummy pad on the spacer and a first dummy wire coupled to the first dummy pad. The first dummy pad is adjacent to the second semiconductor chip. The first semiconductor chip is attached to the second semiconductor chip and the spacer by an adhesive layer on the first semiconductor chip. A portion of each of the signal wire and the first dummy wire are in the adhesive layer.

An amplifier includes a transistor chip including a plurality of transistor cells, a gate pad, and a drain pad, a matching substrate having a surface on which a metal pattern is formed, a terminal with a width larger than a width of the transistor chip and than a width of the matching substrate, a plurality of terminal wires connecting the terminal to the metal pattern, and a plurality of chip wires connecting the metal pattern to the transistor chip. Inter-wire distances of portions of the plurality of terminal wires connected to the metal pattern are larger than inter-wire distances between portions of the plurality of terminal wires connected to the terminal.

In some embodiments, the present application provides an integrated chip. The integrated chip includes a chip comprising a semiconductor device. A shielding structure abuts the chip. The shielding structure comprises a first horizontal region adjacent to a first horizontal surface of the chip. The first horizontal region comprises a first multilayer structure comprising a first dielectric layer and two or more metal layers. The first dielectric layer is disposed between the two or more metal layers.