An apparatus for executing a direct transfer of a semiconductor device die from a first substrate to a second substrate. The apparatus includes a first substrate conveyance mechanism movable in two axes. A micro-adjustment mechanism is coupled with the first substrate conveyance mechanism and is configured to hold the first substrate and to make positional adjustments on a scale smaller than positional adjustments caused by the first substrate conveyance mechanism. The micro-adjustment mechanism includes a micro-adjustment actuator having a distal end and a first substrate holder frame that is movable via contact with the distal end of the micro-adjustment actuator. A second frame is configured to secure the second substrate such that a transfer surface is disposed facing the semiconductor device die disposed on a surface of the first substrate. A transfer mechanism is configured to press the semiconductor device die into contact with the transfer surface of the substrate.

A stamp for micro-transfer printing includes a support having a support stiffness and a support coefficient of thermal expansion (CTE). A pedestal layer is formed on the support, the pedestal layer having a pedestal layer stiffness that is less than the support stiffness and a pedestal layer coefficient of thermal expansion (CTE) that is different from the support coefficient of thermal expansion (CTE). A stamp layer is formed on the pedestal layer, the stamp layer having a body and one or more protrusions extending from the body in a direction away from the pedestal layer. The stamp layer has a stamp layer stiffness that is less than the support stiffness and a stamp layer coefficient of thermal expansion that is different from the support coefficient of thermal expansion.

The present disclosure provides a device transferring apparatus and a device transferring method, comprising: a controlling component and a punching component, the punching component is located at one side of the controlling component; the punching component comprises at least one punching head movable in a first direction; and the controlling component comprises a protruding portion corresponding to the at least one punching head and capable of protruding toward the corresponding punching head, the protruding portion pushes the punching head to move in the first direction by protruding the protruding portion.

A direct transfer apparatus includes a dot matrix transfer head, which includes an impact wire housing and a plurality of impact wires disposed within the impact wire housing and extending out of the impact wire housing. A guide head is attached to the impact wire housing. The guide head includes multiple holes configured to arrange the plurality of impact wires in a matrix configuration, the matrix configuration being a matched-pitch configuration.

An industrial-scale system and method for handling precisely aligned and centered semiconductor substrate (e.g., wafer) pairs for substrate-to-substrate (e.g., wafer-to-wafer) aligning and bonding applications is provided. Some embodiments include an aligned substrate transport device having a frame member and a spacer assembly. The centered semiconductor substrate pairs may be positioned within a processing system using the aligned substrate transport device, optionally under robotic control. The centered semiconductor substrate pairs may be bonded together without the presence of the aligned substrate transport device in the bonding device. The bonding device may include a second spacer assembly which operates in concert with that of the aligned substrate transport device to perform a spacer hand-off between the substrates. A pin apparatus may be used to stake the substrates during the hand-off.

Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

A method for executing a direct transfer of semiconductor device die from a first substrate to transfer locations on a second substrate. The method includes determining a position of impact wires disposed on a transfer head, semiconductor device die, and transfer locations; determining whether there are at least two positions that an impact wire, a semiconductor device die, and a transfer locations are aligned within a threshold tolerance; and transferring, by the impact wires, the semiconductor device die such that the semiconductor device die detaches from the first substrate and attaches to transfer locations on the second substrate. The transferring being completed based at least in part on determining that the impact wire, the semiconductor device die, and the circuit trace are aligned within the threshold tolerance.

An apparatus includes a transfer mechanism to transfer an electrically-actuatable element directly from a wafer tape to a transfer location on a circuit trace on a product substrate. The transfer mechanism includes one or more transfer wires. Two or more stabilizers disposed on either side of the one or more transfer wires. A needle actuator is connected to the one or more transfer wires and the two or more stabilizers to move the one or more transfer wires and the two or more stabilizers to a die transfer position.

According to one embodiment, in a substrate bonding apparatus a first chucking stage includes a first stage base, a plurality of first cylindrical members, and a plurality of first drive mechanisms. The first stage base includes a first main face facing a second chucking stage. The plurality of first cylindrical members are disposed on the first main face. The plurality of first cylindrical members are arrayed in planar directions. The plurality of first cylindrical members protrudes from the first main face in a direction toward the second chucking stage to chuck the first substrate. The plurality of first drive mechanisms are configured to drive the plurality of first cylindrical members independently of each other. The substrate bonding apparatus further comprises a first pressure control mechanism configured to control pressure states of spaces in the plurality of first cylindrical members independently of each other.

Interconnecting a first chip and a second chip includes mounting the first and second chips to a chip handler having an opening and at least one support surface. Each of the first chip and the second chip has a first surface including a first set of terminals and a second surface opposite to the first surface. The first surface of the first chip and the first surface of the second chip mounted to the chip handler are supported by the at least one support surface of the chip handler. The first and second chips are placed on a chip support member with the chip handler from the second surfaces. A bridge member is inserted by a bridge handler through the opening of the chip handler to place the bridge member onto the first sets of terminals of the first and second chips that are exposed from the opening.