Disclosed is a method for fabricating a micro-LED module. The method includes: preparing a circuit board; forming solder bumps on one surface of the circuit board; arranging micro-LED chips on the one surface of the circuit board such that the micro-LED chips are in contact with the solder bumps; heating the solder bumps to bond the micro-LED chips to the one surface of the circuit board through the solder bumps; arranging driver ICs on the other surface of the circuit board such that the driver ICs are in contact with solders on the other surface of the circuit board in a state in which the micro-LED chips are bonded to the circuit board; and heating the solders to bond the driver ICs to the other surface of the circuit board through the solders. The micro-LED chips are arranged on the one surface of the circuit board after the flatness of the circuit board is enhanced.

According to one embodiment, in a substrate bonding apparatus a first chucking stage includes a first stage base, a plurality of first cylindrical members, and a plurality of first drive mechanisms. The first stage base includes a first main face facing a second chucking stage. The plurality of first cylindrical members are disposed on the first main face. The plurality of first cylindrical members are arrayed in planar directions. The plurality of first cylindrical members protrudes from the first main face in a direction toward the second chucking stage to chuck the first substrate. The plurality of first drive mechanisms are configured to drive the plurality of first cylindrical members independently of each other. The substrate bonding apparatus further comprises a first pressure control mechanism configured to control pressure states of spaces in the plurality of first cylindrical members independently of each other.

A substrate bonding method and apparatus are described. The substrate bonding apparatus is used to bond a first substrate to a second substrate. The bonding apparatus includes a first bonding chuck configured to hold the first substrate on a first surface of the first bonding chuck; a second bonding chuck configured to hold the second substrate on a second surface of the second bonding chuck, the second surface facing the first surface of the first bonding chuck; a seal arranged between the first bonding chuck and the second bonding chuck and adjacent to at least one edge of the first substrate and at least one edge of the second substrate; and a process gas supply device configured to supply a process gas to a bonding space surrounded by the seal.

A substrate bonding apparatus includes a first bonding chuck configured to support a first substrate and a second bonding chuck configured to support a second substrate such that the second substrate faces the first substrate. The first bonding chuck includes a first base, a first deformable plate on the first base and configured to support the first substrate and configured to be deformed such that a distance between the first base and the first deformable plate is varied, and a first piezoelectric sheet on the first deformable plate and configured to be deformed in response to power applied thereto to deform the first deformable plate.

A substrate bonding apparatus for bonding a first substrate to a second substrate includes: a first bonding chuck including: a first base; a first deformable plate provided on the first base to support the first substrate; and a first pneumatic adjustor configured to deform the first deformable plate by adjusting a first pressure in a first cavity formed between the first deformable plate and the first base; and a second bonding chuck including: a second base; a second deformable plate provided on the second base to support the second substrate; and a second pneumatic adjustor configured to deform the second deformable plate by adjusting a second pressure in a second cavity formed between the second deformable plate and the second base. The first deformable plate is deformed such that a first distance between the first base and the first deformable plate is varied based on the first pressure, and the second deformable plate is deformed such that a second distance between the second base the second deformable plate is varied based on the second pressure.

An apparatus includes a transfer mechanism to transfer an electrically-actuatable element directly from a wafer tape to a transfer location on a circuit trace on a product substrate. The transfer mechanism includes one or more transfer wires. Two or more stabilizers disposed on either side of the one or more transfer wires. A needle actuator is connected to the one or more transfer wires and the two or more stabilizers to move the one or more transfer wires and the two or more stabilizers to a die transfer position.

A stamp for micro-transfer printing includes a support having a support stiffness and a support coefficient of thermal expansion (CTE). A pedestal layer is formed on the support, the pedestal layer having a pedestal layer stiffness that is less than the support stiffness and a pedestal layer coefficient of thermal expansion (CTE) that is different from the support coefficient of thermal expansion (CTE). A stamp layer is formed on the pedestal layer, the stamp layer having a body and one or more protrusions extending from the body in a direction away from the pedestal layer. The stamp layer has a stamp layer stiffness that is less than the support stiffness and a stamp layer coefficient of thermal expansion that is different from the support coefficient of thermal expansion.

An industrial-scale apparatus, system, and method for handling precisely aligned and centered semiconductor wafer pairs for wafer-to-wafer aligning and bonding applications includes an end effector having a frame member and a floating carrier connected to the frame member with a gap formed therebetween, wherein the floating carrier has a semi-circular interior perimeter. The centered semiconductor wafer pairs are positionable within a processing system using the end effector under robotic control. The centered semiconductor wafer pairs are bonded together without the presence of the end effector in the bonding device.

A method is provided and includes the following steps. A first wafer is coupled to a first support of a bonding tool and a second wafer is coupled to a second support of the bonding tool. The second wafer is bonded to the first wafer with the first wafer coupled to the first support. Whether a bubble is between the bonded first and second wafers in the bonding tool is detected.

A bonding apparatus includes a body part; a vacuum hole disposed in the body part; a first protruding part protruding in a first direction from a first surface of the body part; a second protruding part protruding from the first surface of the body part in the first direction and spaced farther apart from a center of the first surface of the body part than the first protruding part in a second direction intersecting with the first direction; and a trench defined by the first surface of the body part and second surfaces of the first protruding part, the second surfaces protruding in the first direction from the first surface of the body part, and the trench being connected to the vacuum hole, wherein the second protruding part protrudes farther from the first surface of the body part in the first direction than the first protruding part.