Patent classifications
H01L21/31645
Method of manufacturing semiconductor device and substrate processing apparatus
Provided is a method of manufacturing a semiconductor device. The method includes: (a) forming an oxide film having a predetermined thickness on a substrate by alternately repeating: (a-1) forming a layer containing a predetermined element on the substrate by supplying a source gas containing the predetermined element into a process vessel accommodating the substrate and exhausting the source gas from the process vessel; and (a-2) changing the layer containing the predetermined element into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, wherein inside of the process vessel is under a heated atmosphere having a pressure lower than an atmospheric pressure; and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, wherein the inside of the process vessel is under the heated atmosphere having the pressure lower than the atmospheric pressure, and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel.
Methods of forming dielectric films, new precursors and their use in semiconductor manufacturing
Method of deposition on a substrate of a dielectric film by introducing into a reaction chamber a vapor of a precursor selected from the group consisting of Zr(MeCp)(NMe.sub.2).sub.3, Zr(EtCp)(NMe.sub.2).sub.3, ZrCp(NMe.sub.2).sub.3, Zr(MeCp)(NEtMe).sub.3, Zr(EtCp)(NEtMe).sub.3, ZrCp(NEtMe).sub.3, Zr(MeCp)(NEt.sub.2).sub.3, Zr(EtCp)(NEt.sub.2).sub.3, ZrCp(NEt.sub.2).sub.3, Zr(iPr.sub.2Cp)(NMe.sub.2).sub.3, Zr(tBu.sub.2Cp)(NMe.sub.2).sub.3, Hf(MeCp)(NMe.sub.2).sub.3, Hf(EtCp)(NMe.sub.2).sub.3, HfCp(NMe.sub.2).sub.3, Hf(MeCp)(NEtMe).sub.3, Hf(EtCp)(NEtMe).sub.3, HfCp(NEtMe).sub.3, Hf(MeCp)(NEt.sub.2).sub.3, Hf(EtCp)(NEt.sub.2).sub.3, HfCp(NEt.sub.2).sub.3, Hf(iPr.sub.2Cp)(NMe.sub.2).sub.3, Hf(tBu.sub.2Cp)(NMe.sub.2).sub.3, and mixtures thereof; and depositing the dielectric film on the substrate.
Methods of vapor deposition with multiple vapor sources
Methods of vapor deposition include multiple vapor sources. A vapor deposition method includes delivering pulses of a vapor containing a first source chemical to a reaction space from at least two separate source vessels simultaneously. The pulses can contain a substantially consistent concentration of the first source chemical. The method can include purging the reaction space of an excess of the first source chemical after the delivering, and delivering pulses of a vapor containing a second source chemical to the reaction space from at least two separate source vessels simultaneously after the purging.
Method of fabricating a gate dielectric for high-k metal gate devices
The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a substrate, forming an interfacial layer on the substrate by treating the substrate with radicals, and forming a high-k dielectric layer on the interfacial layer. The radicals are selected from the group consisting of hydrous radicals, nitrogen/hydrogen radicals, and sulfur/hydrogen radicals.
METHODS OF FORMING DIELECTRIC FILMS, NEW PRECURSORS AND THEIR USE IN SEMICONDUCTOR MANUFACTURING
Method of deposition on a substrate of a dielectric film by introducing into a reaction chamber a vapor of a precursor selected from the group consisting of Zr(MeCp)(NMe.sub.2).sub.3, Zr(EtCp)(NMe.sub.2).sub.3, ZrCp(NMe.sub.2).sub.3, Zr(MeCp)(NEtMe).sub.3, Zr(EtCp)(NEtMe).sub.3, ZrCp(NEtMe).sub.3, Zr(MeCp)(NEt.sub.2).sub.3, Zr(EtCp)(NEt.sub.2).sub.3, ZrCp(NEt.sub.2).sub.3, Zr(iPr.sub.2Cp)(NMe.sub.2).sub.3, Zr(tBu.sub.2Cp)(NMe.sub.2).sub.3, Hf(MeCp)(NMe.sub.2).sub.3, Hf(EtCp)(NMe.sub.2).sub.3, HfCp(NMe.sub.2).sub.3, Hf(MeCp)(NEtMe).sub.3, Hf(EtCp)(NEtMe).sub.3, HfCp(NEtMe).sub.3, Hf(MeCp)(NEt.sub.2).sub.3, Hf(EtCp)(NEt.sub.2).sub.3, HfCp(NEt.sub.2).sub.3, Hf(iPr.sub.2Cp)(NMe.sub.2).sub.3, Hf(tBu.sub.2Cp)(NMe.sub.2).sub.3, and mixtures thereof; and depositing the dielectric film on the substrate.
Graded dielectric structures
Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment, a dielectric layer is graded with respect to a crystalline structure profile across the dielectric layer. In an embodiment, a dielectric layer is formed by atomic layer deposition incorporating sequencing techniques to generate a doped dielectric material.
Method of forming dielectric films, new precursors and their use in semiconductor manufacturing
Method of deposition on a substrate of a dielectric film by introducing into a reaction chamber a vapor of a precursor selected from the group consisting of Zr(MeCp)(NMe.sub.2).sub.3, Zr(EtCp)(NMe.sub.2).sub.3, ZrCp(NMe.sub.2).sub.3, Zr(MeCp)(NEtMe).sub.3, Zr(EtCp)(NEtMe).sub.3, ZrCp(NEtMe).sub.3, Zr(MeCp)(NEt.sub.2).sub.3, Zr(EtCp)(NEt.sub.2).sub.3, ZrCp(NEt.sub.2).sub.3, Zr(iPr.sub.2Cp)(NMe.sub.2).sub.3, Zr(tBu.sub.2Cp)(NMe.sub.2).sub.3, Hf(MeCp)(NMe.sub.2).sub.3, Hf(EtCp)(NMe.sub.2).sub.3, HfCp(NMe.sub.2).sub.3, Hf(MeCp)(NEtMe).sub.3, Hf(EtCp)(NEtMe).sub.3, HfCp(NEtMe).sub.3, Hf(MeCp)(NEt.sub.2).sub.3, Hf(EtCp)(NEt.sub.2).sub.3, HfCp(NEt.sub.2).sub.3, Hf(iPr.sub.2Cp)(NMe.sub.2).sub.3, Hf(tBu.sub.2Cp)(NMe.sub.2).sub.3, and mixtures thereof; and depositing the dielectric film on the substrate.