An integrated circuit includes two parallel active zones extending in a first direction, an n-type pick-up region, and a p-type pick-up region. The two parallel active zones includes a p-type active zone located in an n-type well and an n-type active zone located in a p-type well. The n-type pick-up region is located in the n-type well and configured to have a first supply voltage. The p-type pick-up region is located in the p-type well and configured to have a second supply voltage, wherein the second supply voltage is lower than the first supply voltage. The n-type pick-up region and the p-type pick-up region are separated from each other along a direction that is different from the first direction.

An integrated circuit includes a first standard cell including a first p-type transistor, a first n-type transistor, a first gate stack intersecting first and second active regions, first extended source/drain contacts on a first side of the first gate stack, a first normal source/drain contact on a second side of the first gate stack, a first gate via connected to the first gate stack, and a first source/drain via connected to the first normal source/drain contact, a second standard cell adjacent the first standard cell and including a second p-type transistor, a second n-type transistor, a second gate stack intersecting the first and second active regions, and a second gate via connected to the second gate stack, an input wiring connected to the first gate via, and an output wiring at a same level as the input wiring to connect the first source/drain via and the second gate via.

An integrated circuit includes a semiconductor substrate, first tap regions, second tap regions, and first gate structures. The semiconductor substrate includes a first active region. The first and second tap regions in the semiconductor substrate and on opposite sides of the first active region. The first gate structures are over the first active region. A distance between the first tap region and a first one of the first gate structures adjacent the first tap region is greater than a distance between the second tap region and a second one of the first gate structures adjacent the second tap region.

A semiconductor device includes first and second active patterns respectively on the first and second active regions of a substrate, a gate electrode on the first and second channel patterns, active contacts electrically connected to at least one of the first and second source/drain patterns, a gate contact electrically connected to the gate electrode, a first metal layer on the active and gate contacts and including a first and second power line, and first and second gate cutting patterns below the first and second power lines. The first active pattern may include first channel pattern between a pair of first source/drain patterns. The second active pattern may include a second channel pattern between a pair of second source/drain patterns. The first and second gate cutting patterns may cover the outermost side surfaces of the first and second channel patterns, respectively.

A MOS IC includes a first circuit including a first plurality of nMOS devices, a first p-tap cell, and a first dummy nMOS cell, and a second circuit including a first plurality of pMOS devices, a first dummy pMOS cell, and a first n-tap cell. The nMOS/pMOS devices are spaced apart in a first direction. The first p-tap cell and the first dummy nMOS cell are adjacent to each other in the first direction between the nMOS devices. The first dummy pMOS cell and the first n-tap cell are adjacent to each other in the first direction between the pMOS devices. The pMOS devices are adjacent to the nMOS devices in a second direction orthogonal to the first direction. The first p-tap cell/the first dummy pMOS cell and the first dummy nMOS cell/the first n-tap cell are respectively adjacent to each other in the second direction.

An integrated circuit includes a first pair of power rails and a second pair of power rails that are disposed in a first layer, conductive lines disposed in a second layer above the first layer, and a first active area disposed in a third layer above the second layer. The first active area is arranged to overlap the first pair of power rails. The first active area is coupled to the first pair of power rails through a first line of the conductive lines and a first group of vias, and the first active area is coupled to the second pair of power rails through at least one second line of the conductive lines and a second group of vias different from the first group of vias.

Provided is a semiconductor integrated circuit device including a nanowire field effect transistor (FET) and having a layout configuration effective for making manufacturing the device easy. A standard cell having no logical function is disposed adjacent to a standard cell having a logical function. The standard cell includes nanowire FETs having nanowires and pads. The standard cell further includes dummy pads, which have no contribution to a logical function of a circuit.

A chip is described including a semiconductor layer including doped regions; a metallization layer on the semiconductor layer and at least one cell row including p-channel field effect transistors and n-channel field effect transistors, wherein the doped regions form source regions and drain regions of the p-channel field effect transistors and the n-channel field effect transistors; contacts extending from the source regions, the drain regions and gate regions of the p-channel field effect transistors and the n-channel field effect transistors to the metallization layer, wherein the metallization layer is structured in accordance with a metallization grid such that the p-channel field effect transistors and the n-channel field effect transistors are connected to form one or more logic gates.

A method for forming an integrated circuit (IC) is provided. The method includes obtaining an IC design; generating a layout according to the IC design; calculating a score of a region in the layout based on voltage levels in the region; and fabricating a semiconductor device according to the layout when the score of the region in the layout is equal to or less than a threshold value.

An integrated circuit includes a first pair of power rails and a second pair of power rails that are disposed in a first layer, conductive lines disposed in a second layer above the first layer, and a first active area disposed in a third layer above the second layer. The first active area is arranged to overlap the first pair of power rails. The first active area is coupled to the first pair of power rails through a first line of the conductive lines and a first group of vias, and the first active area is coupled to the second pair of power rails through at least one second line of the conductive lines and a second group of vias different from the first group of vias.