Electronic design automation (EDA) of the present disclosure, in various embodiments, optimizes designing, simulating, analyzing, and verifying of one or more electronic architectural designs for an electronic device. The EDA of the present disclosure identifies one or more electronic architectural features from the one or more electronic architectural designs. In some situations, the EDA of the present disclosure can manipulate one or more electronic architectural models over multiple iterations using a machine learning process until one or more electronic architectural models from among the one or more electronic architectural models satisfy one or more electronic design targets. The EDA of the present disclosure substitutes the one or more electronic architectural models that satisfy the one or more electronic design targets for the one or more electronic architectural features in the one or more electronic architectural designs to optimize the one or more electronic architectural designs. The EDA of the present disclosure can substitute the one or more electronic architectural models before, during, and/or after designing, simulating, analyzing, and/or verifying of the one or more electronic architectural designs to effectively decrease the time to market (TTM) for the electronic device.

An integrated circuit includes a first conductive pattern in a first conductive layer, a second conductive pattern in a second conductive layer over the first conductive layer, and a via electrically connected with the first conductive pattern and the second conductive pattern to allow a first current flowing from the first conductive pattern to the second conductive pattern and a second current flowing from the second conductive pattern to the first conductive pattern to pass through at different times. The via is placed on the first conductive pattern so that a path of the first current does not overlap with a path of the second current in the first conductive pattern.

A semiconductor integrated circuit device including standard cells including fin transistors includes, at a cell row end, a cell-row-terminating cell that does not contribute to a logical function of a circuit block. The cell-row-terminating cell includes a plurality of fins extending in an X direction. Ends of the plurality of fins on the inner side of the circuit block are near a gate structure placed at a cell end and do not overlap with the gate structure in a plan view, and ends of the plurality of fins on an outer side of the circuit block overlap with any one of a gate structure in a plan view.

Electronic design automation (EDA) of the present disclosure, in various embodiments, optimizes designing, simulating, analyzing, and verifying of one or more electronic architectural designs for an electronic device. The EDA of the present disclosure identifies one or more electronic architectural features from the one or more electronic architectural designs. In some situations, the EDA of the present disclosure can manipulate one or more electronic architectural models over multiple iterations using a machine learning process until one or more electronic architectural models from among the one or more electronic architectural models satisfy one or more electronic design targets. The EDA of the present disclosure substitutes the one or more electronic architectural models that satisfy the one or more electronic design targets for the one or more electronic architectural features in the one or more electronic architectural designs to optimize the one or more electronic architectural designs. The EDA of the present disclosure can substitute the one or more electronic architectural models before, during, and/or after designing, simulating, analyzing, and/or verifying of the one or more electronic architectural designs to effectively decrease the time to market (TTM) for the electronic device.

An integrated circuit includes a first conductive pattern in a first conductive layer, a second conductive pattern in a second conductive layer over the first conductive layer, and a via electrically connected with the first conductive pattern and the second conductive pattern to allow a first current flowing from the first conductive pattern to the second conductive pattern and a second current flowing from the second conductive pattern to the first conductive pattern to pass through at different times. The via is placed on the first conductive pattern so that a path of the first current does not overlap with a path of the second current in the first conductive pattern.

The present invention relates to IC chips containing a mixture of standard cells obtained from an original set of design rules and enhanced standard cells that are a variant of the original set of design rules and methods for making the same.

A semiconductor integrated circuit device including standard cells including fin transistors includes, at a cell row end, a cell-row-terminating cell that does not contribute to a logical function of a circuit block. The cell-row-terminating cell includes a plurality of fins extending in an X direction. Ends of the plurality of fins on the inner side of the circuit block are near a gate structure placed at a cell end and do not overlap with the gate structure in a plan view, and ends of the plurality of fins on an outer side of the circuit block overlap with any one of a gate structure in a plan view.

A semiconductor device includes a substrate having cell areas and power areas that are alternately arranged in a second direction. Gate structures extend in the second direction. The gate structures are spaced apart from each other in a first direction perpendicular to the second direction. Junction layers are arranged at both sides of each gate structure. The junction layers are arranged in the second direction such that each of the junction layer has a flat portion that is proximate to the power area. Cutting patterns are arranged in the power areas. The cutting patterns extend in the first direction such that each of the gate structures and each of the junction layers in neighboring cell areas are separated from each other by the cutting pattern.

A semiconductor integrated circuit device including standard cells including fin transistors includes, at a cell row end, a cell-row-terminating cell that does not contribute to a logical function of a circuit block. The cell-row-terminating cell includes a plurality of fins extending in an X direction. Ends of the plurality of fins on the inner side of the circuit block are near a gate structure placed at a cell end and do not overlap with the gate structure in a plan view, and ends of the plurality of fins on an outer side of the circuit block overlap with any one of a gate structure in a plan view.

An integrated circuit device includes a first device and a second device. The first device is disposed within a first circuit region, the first device including a plurality of first semiconductor strips extending longitudinally in a first direction. Adjacent ones of the plurality of first semiconductor strips are spaced apart from each other in a second direction, which is generally perpendicular to the first direction. The second device is disposed within a second circuit region, the second circuit region being adjacent to the first circuit region in the first direction. The second device includes a second semiconductor strip extending longitudinally in the first direction. A projection of a longitudinal axis of the second semiconductor strip along the first direction lies in a space separating the adjacent ones of the plurality of first semiconductor strips.