A method of manufacturing a semiconductor package including coating a flux on a connection pad provided on a first surface of a substrate, the flux including carbon nanotubes (CNTs), placing a solder ball on the connection pad coated with the flux, forming a solder layer attached to the connection pad from the solder ball through a reflow process, and mounting a semiconductor chip on the substrate such that the solder layer faces a connection pad in the semiconductor chip may be provided.

A method of manufacturing a semiconductor package including coating a flux on a connection pad provided on a first surface of a substrate, the flux including carbon nanotubes (CNTs), placing a solder ball on the connection pad coated with the flux, forming a solder layer attached to the connection pad from the solder ball through a reflow process, and mounting a semiconductor chip on the substrate such that the solder layer faces a connection pad in the semiconductor chip may be provided.

An embodiment method includes forming a first plurality of bond pads on a device substrate, depositing a spacer layer over and extending along sidewalls of the first plurality of bond pads, and etching the spacer layer to remove lateral portions of the spacer layer and form spacers on sidewalls of the first plurality of bond pads. The method further includes bonding a cap substrate including a second plurality of bond pads to the device substrate by bonding the first plurality of bond pads to the second plurality of bond pads.

A semiconductor device includes a semiconductor substrate having a semiconductor device on an active surface thereof. The semiconductor substrate has a quadrangular plane. An insulating layer is on the active surface of the semiconductor substrate. A passivation layer is on the insulating layer. The insulating layer includes an insulating layer central portion having a side surface extending in parallel with a side surface of the semiconductor substrate. The side surface of the insulating layer central portion is spaced apart from the side surface of the semiconductor substrate by a first size. An insulating layer corner portion is at each corner of the insulating layer central portion and protrudes from the side surface of the insulating layer central portion in a horizontal direction. The passivation layer covers the insulating layer central portion.

A semiconductor device includes a semiconductor substrate having a semiconductor device on an active surface thereof. The semiconductor substrate has a quadrangular plane. An insulating layer is on the active surface of the semiconductor substrate. A passivation layer is on the insulating layer. The insulating layer includes an insulating layer central portion having a side surface extending in parallel with a side surface of the semiconductor substrate. The side surface of the insulating layer central portion is spaced apart from the side surface of the semiconductor substrate by a first size. An insulating layer corner portion is at each corner of the insulating layer central portion and protrudes from the side surface of the insulating layer central portion in a horizontal direction. The passivation layer covers the insulating layer central portion.

Semiconductor devices, such as vertical-cavity surface-emitting lasers, and methods for manufacturing the same, are disclosed. The semiconductor devices include contact extensions and electrically conductive adhesive material, such as fusible metal alloys or electrically conductive composites. In some instances, the semiconductor devices further include structured contacts. These components enable the production of semiconductor devices having minimal distortion. For example, arrays of vertical-cavity surface-emitting lasers can be produced exhibiting little to no bowing. Semiconductor devices having minimal distortion exhibit enhanced performance in some instances.

Semiconductor devices, such as vertical-cavity surface-emitting lasers, and methods for manufacturing the same, are disclosed. The semiconductor devices include contact extensions and electrically conductive adhesive material, such as fusible metal alloys or electrically conductive composites. In some instances, the semiconductor devices further include structured contacts. These components enable the production of semiconductor devices having minimal distortion. For example, arrays of vertical-cavity surface-emitting lasers can be produced exhibiting little to no bowing. Semiconductor devices having minimal distortion exhibit enhanced performance in some instances.

A semiconductor package includes a substrate, a plurality of semiconductor devices stacked on the substrate, a plurality of underfill fillets disposed between the plurality of semiconductor devices and between the substrate and the plurality of semiconductor devices, and molding resin surrounding the plurality of semiconductor devices. At least one of the underfill fillets is exposed from side surfaces of the molding resin.

A semiconductor package includes a substrate, a plurality of semiconductor devices stacked on the substrate, a plurality of underfill fillets disposed between the plurality of semiconductor devices and between the substrate and the plurality of semiconductor devices, and molding resin surrounding the plurality of semiconductor devices. At least one of the underfill fillets is exposed from side surfaces of the molding resin.

A semiconductor package includes a substrate and an interposer disposed on the substrate. The interposer comprises a first surface facing the substrate and a second surface facing away from the substrate. A first logic semiconductor chip is disposed on the first surface of the interposer and is spaced apart from the substrate in a first direction orthogonal to an upper surface of the substrate. A first memory package is disposed on the second surface of the interposer. A second memory package is disposed on the second surface of the interposer and is spaced apart from the first memory package in a second direction that is parallel to the upper surface of the substrate. A first heat transfer unit is disposed on a surface of the substrate facing the first logic semiconductor chip. The first heat transfer unit is spaced apart from the first logic semiconductor chip in the first direction.