The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first conductive body, a second conductive body positioned separate from the first conductive body, a plurality of liners respectively correspondingly attached to a side surface of the first conductive body and a side surface of the second conductive body, and a first insulating segment positioned between the first conductive body and the second conductive body.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first conductive body, a second conductive body positioned separate from the first conductive body, a plurality of liners respectively correspondingly attached to a side surface of the first conductive body and a side surface of the second conductive body, and a first insulating segment positioned between the first conductive body and the second conductive body.

Rework and recovery processes generally include application of liquid metal etchant compositions to selectively remove one layer at a time of a solder layer and underball metallurgy multilayer stack including a titanium-based adhesion layer, a copper seed layer, a plated copper conductor layer, and a nickel-based barrier layer. The rework and recovery process can be applied to the dies, wafers, and/or substrate.

Rework and recovery processes generally include application of liquid metal etchant compositions to selectively remove one layer at a time of a solder layer and underball metallurgy multilayer stack including a titanium-based adhesion layer, a copper seed layer, a plated copper conductor layer, and a nickel-based barrier layer. The rework and recovery process can be applied to the dies, wafers, and/or substrate.

A light emitting diode (LED) includes a n-doped semiconductor material layer, a p-doped semiconductor material layer, an active region disposed between the n-doped semiconductor layer and the p-doped semiconductor layer, and a photonic crystal grating configured to increase the light extraction efficiency of the LED.

Disclosed is a semiconductor device including a conductive pattern on a substrate, a passivation layer on the substrate and including an opening that partially exposes the conductive pattern, and a pad structure in the opening of the passivation layer and connected to the conductive pattern. The pad structure includes a first metal layer that fills the opening of the passivation layer and has a width greater than that of the opening, and a second metal layer on the first metal layer. The first metal layer has a first thickness at an outer wall of the first metal layer, a second thickness on a top surface of the passivation layer, and a third thickness on a top surface of the conductive pattern. The second thickness is greater than the first thickness, and the third thickness is greater than the second thickness.

Disclosed is a semiconductor device including a conductive pattern on a substrate, a passivation layer on the substrate and including an opening that partially exposes the conductive pattern, and a pad structure in the opening of the passivation layer and connected to the conductive pattern. The pad structure includes a first metal layer that fills the opening of the passivation layer and has a width greater than that of the opening, and a second metal layer on the first metal layer. The first metal layer has a first thickness at an outer wall of the first metal layer, a second thickness on a top surface of the passivation layer, and a third thickness on a top surface of the conductive pattern. The second thickness is greater than the first thickness, and the third thickness is greater than the second thickness.

Semiconductor devices having redistribution structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor package includes a first semiconductor die including a first redistribution structure and a second semiconductor die including a second redistribution structure. The first and second semiconductor dies can be mounted on a package substrate such that the first and second redistribution structures are aligned with each other. In some embodiments, an interconnect structure can be positioned between the first and second semiconductor dies to electrically couple the first and second redistribution structures to each other. The first and second redistribution structures can be configured such that signal routing between the first and second semiconductor dies can be altered based on the location of the interconnect structure.

Semiconductor devices having redistribution structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor package includes a first semiconductor die including a first redistribution structure and a second semiconductor die including a second redistribution structure. The first and second semiconductor dies can be mounted on a package substrate such that the first and second redistribution structures are aligned with each other. In some embodiments, an interconnect structure can be positioned between the first and second semiconductor dies to electrically couple the first and second redistribution structures to each other. The first and second redistribution structures can be configured such that signal routing between the first and second semiconductor dies can be altered based on the location of the interconnect structure.

An optoelectronic component includes a radiation side, a contact side opposite the radiation side having at least two electrically conductive contact elements, and a semiconductor layer sequence having an active layer that emits or absorbs the electromagnetic radiation, wherein the at least two electrically conductive contact elements have different polarities, are spaced apart from each other and are completely or partially exposed at the contact side in an unmounted state of the optoelectronic component, a region of the contact side is partially or completely covered with an electrically insulating, contiguously formed cooling element, the cooling element is in direct contact with the contact side and has a thermal conductivity of at least 30 W/(m.Math.K), and in a plan view of the contact side, the cooling element partially covers one or both of the at least two electrically conductive contact elements.