The present application discloses a method for fabricating a semiconductor device with liners. The method includes providing a substrate having a first surface and a second surface opposite to the first surface, inwardly forming a trench on the first surface of the substrate, forming a plurality of liners positioned on side surfaces of the trench, forming a first insulating segment filling the trench, and removing part of the substrate from the second surface to expose the first insulating segment and the plurality of liners.

The present application discloses a method for fabricating a semiconductor device with liners. The method includes providing a substrate having a first surface and a second surface opposite to the first surface, inwardly forming a trench on the first surface of the substrate, forming a plurality of liners positioned on side surfaces of the trench, forming a first insulating segment filling the trench, and removing part of the substrate from the second surface to expose the first insulating segment and the plurality of liners.

A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer and a second semiconductor layer, wherein in a top view, the semiconductor stack comprises an outer peripheral region and an inner region, the outer peripheral region exposes the first semiconductor layer, and the second semiconductor layer is disposed in the inner region; an outer insulated structure comprising an insulation layer and a protective layer, the insulation layer comprising a plurality of first insulation layer outer openings and a second insulation layer opening; a first electrode covering the plurality of first insulation layer outer openings; and a second electrode covering the second insulation layer opening, wherein the outer insulated structure comprises a total thickness gradually decreasing from the outer peripheral region to the inner region.

A connection electrode includes a first metal film, a second metal film, a mixed layer, and an extraction electrode. The second metal film is located on the first metal film, and the extraction electrode is located on the second metal film. The mixed layer includes a mix of metal particles of the first and second metal films. As viewed in a first direction in which the first metal film and the second metal film are on top of each other, at least a portion of the mixed layer is in a first region that overlaps a bonding plane between the extraction electrode and the second metal film.

A connection electrode includes a first metal film, a second metal film, a mixed layer, and an extraction electrode. The second metal film is located on the first metal film, and the extraction electrode is located on the second metal film. The mixed layer includes a mix of metal particles of the first and second metal films. As viewed in a first direction in which the first metal film and the second metal film are on top of each other, at least a portion of the mixed layer is in a first region that overlaps a bonding plane between the extraction electrode and the second metal film.

An optoelectronic component includes a radiation side, a contact side opposite the radiation side having at least two electrically conductive contact elements, and a semiconductor layer sequence having an active layer that emits or absorbs the electromagnetic radiation, wherein the at least two electrically conductive contact elements have different polarities, are spaced apart from each other and are completely or partially exposed at the contact side in an unmounted state of the optoelectronic component, a region of the contact side is partially or completely covered with an electrically insulating, contiguously formed cooling element, the cooling element is in direct contact with the contact side and has a thermal conductivity of at least 30 W/(m.Math.K), and in a plan view of the contact side, the cooling element partially covers one or both of the at least two electrically conductive contact elements.

An optoelectronic component includes a radiation side, a contact side opposite the radiation side having at least two electrically conductive contact elements, and a semiconductor layer sequence having an active layer that emits or absorbs the electromagnetic radiation, wherein the at least two electrically conductive contact elements have different polarities, are spaced apart from each other and are completely or partially exposed at the contact side in an unmounted state of the optoelectronic component, a region of the contact side is partially or completely covered with an electrically insulating, contiguously formed cooling element, the cooling element is in direct contact with the contact side and has a thermal conductivity of at least 30 W/(m.Math.K), and in a plan view of the contact side, the cooling element partially covers one or both of the at least two electrically conductive contact elements.

A cobalt electroplating composition may include (a) cobalt ions; and (b) an ammonium compound of formula (NR.sup.1R.sup.2R.sup.3H.sup.+).sub.nX.sup.n−, wherein R.sup.1, R.sup.2, R.sup.3 are independently H or linear or branched C.sub.1 to C.sub.6 alkyl, X is one or more n valent inorganic or organic counter ion(s), and n is an integer from 1, 2, or 3.

A cobalt electroplating composition may include (a) cobalt ions; and (b) an ammonium compound of formula (NR.sup.1R.sup.2R.sup.3H.sup.+).sub.nX.sup.n−, wherein R.sup.1, R.sup.2, R.sup.3 are independently H or linear or branched C.sub.1 to C.sub.6 alkyl, X is one or more n valent inorganic or organic counter ion(s), and n is an integer from 1, 2, or 3.

A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.