A semiconductor package including a first semiconductor chip having a first thickness, a second semiconductor chip on the first semiconductor chip and having a second thickness, the second thickness being smaller than the first thickness, a third semiconductor chip on the second semiconductor chip and having a third thickness, the third thickness being smaller than the second thickness, a fourth semiconductor chip on the third semiconductor chip and having a fourth thickness, the fourth thickness being greater than the third thickness, and a fifth semiconductor chip disposed on the fourth semiconductor chip and having a fifth thickness, the fifth thickness being greater than the fourth thickness may be provided.

A semiconductor package including a first semiconductor chip having a first thickness, a second semiconductor chip on the first semiconductor chip and having a second thickness, the second thickness being smaller than the first thickness, a third semiconductor chip on the second semiconductor chip and having a third thickness, the third thickness being smaller than the second thickness, a fourth semiconductor chip on the third semiconductor chip and having a fourth thickness, the fourth thickness being greater than the third thickness, and a fifth semiconductor chip disposed on the fourth semiconductor chip and having a fifth thickness, the fifth thickness being greater than the fourth thickness may be provided.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first conductive body, a second conductive body positioned separate from the first conductive body, a plurality of liners respectively correspondingly attached to a side surface of the first conductive body and a side surface of the second conductive body, and a first insulating segment positioned between the first conductive body and the second conductive body.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first conductive body, a second conductive body positioned separate from the first conductive body, a plurality of liners respectively correspondingly attached to a side surface of the first conductive body and a side surface of the second conductive body, and a first insulating segment positioned between the first conductive body and the second conductive body.

In a described example, a method includes: forming a metal layer on a backside surface of a semiconductor wafer, the semiconductor wafer having semiconductor dies spaced apart by scribe lanes on an active surface of the semiconductor wafer opposite the backside surface; forming a layer with a modulus greater than about 4000 MPa up to about 8000 MPa over the metal layer; mounting the backside of the semiconductor wafer on a first side of a dicing tape having an adhesive; cutting through the semiconductor wafer, the metal layer, and the layer with a modulus greater than about 4000 MPa up to about 8000 MPa along scribe lanes; separating the semiconductor dies from the semiconductor wafer and from one another by stretching the dicing tape, expanding the cuts in the semiconductor wafer along the scribe lanes between the semiconductor dies; and removing the separated semiconductor dies from the dicing tape.

In a described example, a method includes: forming a metal layer on a backside surface of a semiconductor wafer, the semiconductor wafer having semiconductor dies spaced apart by scribe lanes on an active surface of the semiconductor wafer opposite the backside surface; forming a layer with a modulus greater than about 4000 MPa up to about 8000 MPa over the metal layer; mounting the backside of the semiconductor wafer on a first side of a dicing tape having an adhesive; cutting through the semiconductor wafer, the metal layer, and the layer with a modulus greater than about 4000 MPa up to about 8000 MPa along scribe lanes; separating the semiconductor dies from the semiconductor wafer and from one another by stretching the dicing tape, expanding the cuts in the semiconductor wafer along the scribe lanes between the semiconductor dies; and removing the separated semiconductor dies from the dicing tape.

A semiconductor package includes a substrate, a plurality of semiconductor devices stacked on the substrate, a plurality of underfill fillets disposed between the plurality of semiconductor devices and between the substrate and the plurality of semiconductor devices, and molding resin surrounding the plurality of semiconductor devices. At least one of the underfill fillets is exposed from side surfaces of the molding resin.

A semiconductor package includes a substrate, a plurality of semiconductor devices stacked on the substrate, a plurality of underfill fillets disposed between the plurality of semiconductor devices and between the substrate and the plurality of semiconductor devices, and molding resin surrounding the plurality of semiconductor devices. At least one of the underfill fillets is exposed from side surfaces of the molding resin.

A power semiconductor device is proposed. The power semiconductor device includes a semiconductor substrate. The power semiconductor device further includes an electrically conducting first layer. At least part of the electrically conducting first layer includes pores. The power semiconductor device further includes an electrically conducting second layer. The electrically conducting second layer is arranged between the semiconductor substrate and the electrically conducting first layer. The pores are at least partially filled with a phase change material.

A power semiconductor device is proposed. The power semiconductor device includes a semiconductor substrate. The power semiconductor device further includes an electrically conducting first layer. At least part of the electrically conducting first layer includes pores. The power semiconductor device further includes an electrically conducting second layer. The electrically conducting second layer is arranged between the semiconductor substrate and the electrically conducting first layer. The pores are at least partially filled with a phase change material.