A method for manufacturing a semiconductor device includes: providing a semiconductor substrate having first and second sides; forming at least one doping region at the first side; forming a first metallization structure at the first side on and in contact with the at least one doping region; and subsequently forming a second metallization structure at the second side, the second metallization structure forming at least one silicide interface region with the semiconductor substrate and at least one non-silicide interface region with the semiconductor substrate.

A semiconductor device includes a semiconductor substrate having a first surface and a second surface opposing each other, a plurality of semiconductor elements disposed on the first surface in a device region, an insulating protective layer, and a connection pad. The second surface is divided into a first region overlapping the device region, and a second region surrounding the first region. The insulating protective layer is disposed on the second surface of the semiconductor substrate, and includes an edge pattern positioned in the second region. The edge pattern includes a thinner portion having a thickness smaller than a thickness of a center portion of the insulating protective layer positioned in the first region and/or an open region exposing the second surface of the semiconductor substrate. The connection pad is disposed on the center portion of the insulating protective layer and is electrically connected to the semiconductor elements.

A semiconductor device includes a semiconductor substrate having a first surface and a second surface opposing each other, a plurality of semiconductor elements disposed on the first surface in a device region, an insulating protective layer, and a connection pad. The second surface is divided into a first region overlapping the device region, and a second region surrounding the first region. The insulating protective layer is disposed on the second surface of the semiconductor substrate, and includes an edge pattern positioned in the second region. The edge pattern includes a thinner portion having a thickness smaller than a thickness of a center portion of the insulating protective layer positioned in the first region and/or an open region exposing the second surface of the semiconductor substrate. The connection pad is disposed on the center portion of the insulating protective layer and is electrically connected to the semiconductor elements.

A method for fabricating a semiconductor structure is provided. The method includes forming a semiconductor chip; providing a printed circuit board; and forming an adhesive layer between a connection surface of the semiconductor chip and the printed circuit board to bond the semiconductor chip with the printed circuit board. The semiconductor chip includes a plurality of cutting tracks intersected with each other to enclose an area having corner regions. The connection surface of the semiconductor chip includes a plurality of conductive bumps and a plurality of first openings are formed in each of the corner regions.

A method for fabricating a semiconductor structure is provided. The method includes forming a semiconductor chip; providing a printed circuit board; and forming an adhesive layer between a connection surface of the semiconductor chip and the printed circuit board to bond the semiconductor chip with the printed circuit board. The semiconductor chip includes a plurality of cutting tracks intersected with each other to enclose an area having corner regions. The connection surface of the semiconductor chip includes a plurality of conductive bumps and a plurality of first openings are formed in each of the corner regions.

A display device includes a substrate including a display area and a pad area; a first conductive layer including a first pad electrode in the pad area; and a second conductive layer the second conductive layer includes a second pad electrode on the first pad electrode in the pad area; the first pad electrode and the second pad electrode overlap in a first direction that is a thickness direction, and do not overlap in a second direction perpendicular to the first direction.

A semiconductor package includes a substrate, a plurality of semiconductor devices stacked on the substrate, a plurality of underfill fillets disposed between the plurality of semiconductor devices and between the substrate and the plurality of semiconductor devices, and molding resin surrounding the plurality of semiconductor devices. At least one of the underfill fillets is exposed from side surfaces of the molding resin.

A semiconductor package includes a substrate, a plurality of semiconductor devices stacked on the substrate, a plurality of underfill fillets disposed between the plurality of semiconductor devices and between the substrate and the plurality of semiconductor devices, and molding resin surrounding the plurality of semiconductor devices. At least one of the underfill fillets is exposed from side surfaces of the molding resin.

A semiconductor device includes a semiconductor substrate and a connection terminal, including a base pillar, on the semiconductor substrate. An insulation layer is formed on the semiconductor substrate, the insulation layer including an opening in the insulation layer through which the base pillar extends, wherein a side wall of the insulation layer defining the opening includes a horizontal step at a level that is lower than an uppermost portion of the base pillar.

A semiconductor device includes a semiconductor substrate and a connection terminal, including a base pillar, on the semiconductor substrate. An insulation layer is formed on the semiconductor substrate, the insulation layer including an opening in the insulation layer through which the base pillar extends, wherein a side wall of the insulation layer defining the opening includes a horizontal step at a level that is lower than an uppermost portion of the base pillar.