Disclosed is a method for transient liquid-phase bonding between metal materials using a magnetic force. In particular, in the method, a magnetic force is applied to a transient liquid-phase bonding process, thereby shortening a transient liquid-phase bonding time between the metal materials, and obtaining high bonding strength. To this end, an attractive magnetic force is applied to a ferromagnetic base while a repulsive magnetic force is applied to a diamagnetic base, thereby to accelerate diffusion. This may reduce a bonding time during a transient liquid-phase bonding process between two bases and suppress formation of Kirkendall voids and voids and suppress a layered structure of an intermetallic compound, thereby to increase a bonding strength.

A first semiconductor die and a second semiconductor die can be bonded in a manner that enhances alignment of bonding pads. Non-uniform deformation of a first wafer including first semiconductor dies can be compensated for by forming a patterned stress-generating film on a backside of the first wafer. Metallic bump portions can be formed on concave surfaces of metallic bonding pads by a selective metal deposition process to reduce gaps between pairs of bonded metallic bonding pads. Pad-to-pad pitch can be adjusted on a semiconductor die to match the pad-to-pad pitch of another semiconductor die employing a tilt-shift operation in a lithographic exposure tool. A chuck configured to provide non-uniform displacement across a wafer can be employed to hold a wafer in a contoured shape for bonding with another wafer in a matching contoured position. Independently height-controlled pins can be employed to hold a wafer in a non-planar configuration.

A first semiconductor die and a second semiconductor die can be bonded in a manner that enhances alignment of bonding pads. Non-uniform deformation of a first wafer including first semiconductor dies can be compensated for by forming a patterned stress-generating film on a backside of the first wafer. Metallic bump portions can be formed on concave surfaces of metallic bonding pads by a selective metal deposition process to reduce gaps between pairs of bonded metallic bonding pads. Pad-to-pad pitch can be adjusted on a semiconductor die to match the pad-to-pad pitch of another semiconductor die employing a tilt-shift operation in a lithographic exposure tool. A chuck configured to provide non-uniform displacement across a wafer can be employed to hold a wafer in a contoured shape for bonding with another wafer in a matching contoured position. Independently height-controlled pins can be employed to hold a wafer in a non-planar configuration.

First and second contacts are formed on first and second wafers from disparate first and second conductive materials, at least one of which is subject to surface oxidation when exposed to air. A layer of oxide-inhibiting material is disposed over a bonding surface of the first contact and the first and second wafers are positioned relative to one another such that a bonding surface of the second contact is in physical contact with the layer of oxide-inhibiting material. Thereafter, the first and second contacts and the layer of oxide-inhibiting material are heated to a temperature that renders the first and second contacts and the layer of oxide-inhibiting material to liquid phases such that at least the first and second contacts alloy into a eutectic bond.

The light-emitting device package disclosed in the embodiment includes first and second frames; a body supporting the first and second frames; and a light emitting device on the second frame, and the body may include a lower surface, a first side, and a second side facing the first side. The first frame includes a first recess that is concave in a second side direction from a first side portion adjacent to the first side, and the second frame includes a second recess that is concave in a first side direction from a second side portion adjacent to the second side. The first side portion of the first frame includes plurality of protrusions exposed to the first side of the body, the first recess is disposed between the protrusions of the first side portion, the second side portion of the second frame includes plurality of protrusions exposed to the second side of the body, and the second recess is disposed between the protrusions of the second side portion. A first length in the second direction of the first and second recesses is longer than a width in the first direction, and the first length may be larger than the second length in the second direction, which is an interval between the protrusions disposed in each of the first and second frames.

The light-emitting device package disclosed in the embodiment includes first and second frames; a body supporting the first and second frames; and a light emitting device on the second frame, and the body may include a lower surface, a first side, and a second side facing the first side. The first frame includes a first recess that is concave in a second side direction from a first side portion adjacent to the first side, and the second frame includes a second recess that is concave in a first side direction from a second side portion adjacent to the second side. The first side portion of the first frame includes plurality of protrusions exposed to the first side of the body, the first recess is disposed between the protrusions of the first side portion, the second side portion of the second frame includes plurality of protrusions exposed to the second side of the body, and the second recess is disposed between the protrusions of the second side portion. A first length in the second direction of the first and second recesses is longer than a width in the first direction, and the first length may be larger than the second length in the second direction, which is an interval between the protrusions disposed in each of the first and second frames.

According to an embodiment, a semiconductor device includes a silicon substrate, a device layer, and a lower layer. The device layer is formed on an upper surface of the silicon substrate. The lower layer is formed on a lower surface of the silicon substrate and has a side surface connecting to a side surface of the silicon substrate. At least a pair of side surfaces of the semiconductor device has a curved shape widening from an upper side toward a lower side.

According to an embodiment, a semiconductor device includes a silicon substrate, a device layer, and a lower layer. The device layer is formed on an upper surface of the silicon substrate. The lower layer is formed on a lower surface of the silicon substrate and has a side surface connecting to a side surface of the silicon substrate. At least a pair of side surfaces of the semiconductor device has a curved shape widening from an upper side toward a lower side.

A semiconductor device is presented. The semiconductor device comprises a semiconductor body coupled to a first load terminal and to a second load terminal and configured to carry a load current between the first load terminal and the second load terminal. The first load terminal comprises a contiguous metal layer coupled to the semiconductor body; and at least one metal island arranged on top of and in contact with the contiguous metal layer and configured to be contacted by an end of a bond wire and to receive at least a part of the load current by means of the bond wire, wherein the contiguous metal layer and the metal island are composed of the same metal.

A first semiconductor die and a second semiconductor die can be bonded in a manner that enhances alignment of bonding pads. Non-uniform deformation of a first wafer including first semiconductor dies can be compensated for by forming a patterned stress-generating film on a backside of the first wafer. Metallic bump portions can be formed on concave surfaces of metallic bonding pads by a selective metal deposition process to reduce gaps between pairs of bonded metallic bonding pads. Pad-to-pad pitch can be adjusted on a semiconductor die to match the pad-to-pad pitch of another semiconductor die employing a tilt-shift operation in a lithographic exposure tool. A chuck configured to provide non-uniform displacement across a wafer can be employed to hold a wafer in a contoured shape for bonding with another wafer in a matching contoured position. Independently height-controlled pins can be employed to hold a wafer in a non-planar configuration.