The present disclosure provides a semiconductor packaging method and a semiconductor package device. The method includes providing a chip, where the chip includes a chip substrate having a front surface and a back surface; soldering pads disposed at the front surface of a chip substrate surrounding the photosensitive region; a metal part formed on a side of each soldering pad facing away from the chip substrate; and a transparent protective layer formed on the front surface of the chip substrate. A first end of the metal part away from a corresponding soldering pad is in coplanar with the transparent protective layer; and the first end of the metal part is not covered by the transparent protective layer. The method further includes electrically connecting the first end of the metal part to a circuit board using a conductive connection part to electrically connect the chip with the circuit board.

In some examples, a package comprises a die and a redistribution layer coupled to the die. The redistribution layer comprises a metal layer, a brass layer abutting the metal layer, and a polymer layer abutting the brass layer.

The present disclosure provides a method of creating a bond between a first object and a second object. For example, at least one insert may be provided at a location in a space formed between the first object and the second object. In additional, a filler material may be provided proximal to the location. An inter-diffusion layer may be formed, wherein a first portion of the inter-diffusion layer is formed by diffusion between the filler material and the at least one insert, wherein a second portion of the inter-diffusion layer is formed between the filler material and the first object, wherein a third portion of the inter-diffusion layer is formed between the filler material and the second object, wherein the first portion is coadunate with each of the second portion and third portion.

The present disclosure provides a method of creating a bond between a first object and a second object. For example, at least one insert may be provided at a location in a space formed between the first object and the second object. In additional, a filler material may be provided proximal to the location. An inter-diffusion layer may be formed, wherein a first portion of the inter-diffusion layer is formed by diffusion between the filler material and the at least one insert, wherein a second portion of the inter-diffusion layer is formed between the filler material and the first object, wherein a third portion of the inter-diffusion layer is formed between the filler material and the second object, wherein the first portion is coadunate with each of the second portion and third portion.

Layer structures for making direct metal-to-metal bonds at low temperatures and shorter annealing durations in microelectronics are provided. Example bonding interface structures enable direct metal-to-metal bonding of interconnects at low annealing temperatures of 150° C. or below, and at a lower energy budget. The example structures provide a precise metal recess distance for conductive pads and vias being bonded that can be achieved in high volume manufacturing. The example structures provide a vertical stack of conductive layers under the bonding interface, with geometries and thermal expansion features designed to vertically expand the stack at lower temperatures over the precise recess distance to make the direct metal-to-metal bonds. Further enhancements, such as surface nanotexture and copper crystal plane selection, can further actuate the direct metal-to-metal bonding at lowered annealing temperatures and shorter annealing durations.

Layer structures for making direct metal-to-metal bonds at low temperatures and shorter annealing durations in microelectronics are provided. Example bonding interface structures enable direct metal-to-metal bonding of interconnects at low annealing temperatures of 150° C. or below, and at a lower energy budget. The example structures provide a precise metal recess distance for conductive pads and vias being bonded that can be achieved in high volume manufacturing. The example structures provide a vertical stack of conductive layers under the bonding interface, with geometries and thermal expansion features designed to vertically expand the stack at lower temperatures over the precise recess distance to make the direct metal-to-metal bonds. Further enhancements, such as surface nanotexture and copper crystal plane selection, can further actuate the direct metal-to-metal bonding at lowered annealing temperatures and shorter annealing durations.

Composite integrated circuit (IC) device structures that include two components coupled through a hybrid bonded composite interconnect structure. The two components may be two different monolithic IC structures (e.g., chips) that are bonded over substantially planar dielectric and metallization interfaces. Composite interconnect metallization features formed at a bond interface may be doped with a metal or chalcogenide dopant. The dopant may migrate to a periphery of the composite interconnect structure and form a barrier material that will then limit outdiffusion of a metal, such as copper, into adjacent dielectric material.

Composite integrated circuit (IC) device structures that include two components coupled through a hybrid bonded composite interconnect structure. The two components may be two different monolithic IC structures (e.g., chips) that are bonded over substantially planar dielectric and metallization interfaces. Composite interconnect metallization features formed at a bond interface may be doped with a metal or chalcogenide dopant. The dopant may migrate to a periphery of the composite interconnect structure and form a barrier material that will then limit outdiffusion of a metal, such as copper, into adjacent dielectric material.

A semiconductor device is provided. The semiconductor device includes a substrate, an insulating film, and a photo sensitive film. The substrate includes a semiconductor chip region and a scribe line region disposed along an edge of the semiconductor chip region. The insulating film includes a first portion disposed on the semiconductor chip region, a second portion disposed on the scribe line region and connected with the first portion, and a third portion disposed on the scribe line region and protruded in a first direction from the second portion. The photo sensitive film is disposed on the insulating film and has a sidewall exposed on the second portion of the insulating film. A first width of the third portion in a second direction perpendicular to the first direction decreases as a distance from the semiconductor chip region increases.

A semiconductor device is provided. The semiconductor device includes a substrate, an insulating film, and a photo sensitive film. The substrate includes a semiconductor chip region and a scribe line region disposed along an edge of the semiconductor chip region. The insulating film includes a first portion disposed on the semiconductor chip region, a second portion disposed on the scribe line region and connected with the first portion, and a third portion disposed on the scribe line region and protruded in a first direction from the second portion. The photo sensitive film is disposed on the insulating film and has a sidewall exposed on the second portion of the insulating film. A first width of the third portion in a second direction perpendicular to the first direction decreases as a distance from the semiconductor chip region increases.