A semiconductor package and a method of manufacturing the same are provided. The semiconductor package includes a semiconductor die, a cap layer, a conductive terminal, and a dam structure. The semiconductor die has a first surface. The cap layer is over the semiconductor die and has a second surface facing the first surface of the semiconductor die. The conductive terminal penetrates the cap layer and electrically connects to the semiconductor die. The dam structure is between the semiconductor die and the cap layer and surrounds a portion of the conductive terminal between the first surface and the second surface, thereby forming a gap between the cap layer and the semiconductor die.

A semiconductor package and a method of manufacturing the same are provided. The semiconductor package includes a semiconductor die, a cap layer, a conductive terminal, and a dam structure. The semiconductor die has a first surface. The cap layer is over the semiconductor die and has a second surface facing the first surface of the semiconductor die. The conductive terminal penetrates the cap layer and electrically connects to the semiconductor die. The dam structure is between the semiconductor die and the cap layer and surrounds a portion of the conductive terminal between the first surface and the second surface, thereby forming a gap between the cap layer and the semiconductor die.

Methods and apparatus are described for enabling copper-to-copper (CuCu) bonding at reduced temperatures (e.g., at most 200 C.) by significantly reducing Cu oxide formation. These techniques provide for faster cycle time and entail no extraordinary measures (e.g., forming gas). Such techniques may also enable longer queue (Q) or staging times. One example semiconductor structure generally includes a semiconductor layer, an adhesion layer disposed above the semiconductor layer, an anodic metal layer disposed above the adhesion layer, and a cathodic metal layer disposed above the anodic metal layer. An oxidation potential of the anodic metal layer may be greater than an oxidation potential of the cathodic metal layer. Such a semiconductor structure may be utilized in fabricating IC packages implementing 2.5D or 3D integration.

A display panel and a method of fabricating the same, and a display device are provided, the display panel includes a display substrate a package substrate opposite to each other, the display substrate includes a first base substrate; and a first electrode, an electroluminescent layer and a second electrode disposed on the first base substrate in sequence; the package substrate includes a second base substrate; and a conductive layer on the second base substrate, the conductive layer and the second electrode facing towards each other; the display panel further includes a conductive adhesive between the second electrode and the conductive layer, the conductive adhesive is configured to bond the display substrate with the package substrate, and electrically connect the second electrode with the conductive layer.

The present invention includes: preparing a semiconductor substrate having a first main surface and a second main surface that is located on an opposite side of the first main surface; forming a first electrode on the first main surface; forming a solder-bonding metal film (a first solder-bonding metal film) on the first electrode; forming a sacrificial film on the first solder-bonding metal film; grinding the second main surface after forming the sacrificial film; performing heat treatment after the grinding (forming an element structure on the third main surface side); removing the sacrificial film after the performing heat treatment; and solder-bonding the first solder-bonding metal film and a first external electrode.

The present invention includes: preparing a semiconductor substrate having a first main surface and a second main surface that is located on an opposite side of the first main surface; forming a first electrode on the first main surface; forming a solder-bonding metal film (a first solder-bonding metal film) on the first electrode; forming a sacrificial film on the first solder-bonding metal film; grinding the second main surface after forming the sacrificial film; performing heat treatment after the grinding (forming an element structure on the third main surface side); removing the sacrificial film after the performing heat treatment; and solder-bonding the first solder-bonding metal film and a first external electrode.

Methods and apparatus are described for enabling copper-to-copper (CuCu) bonding at reduced temperatures (e.g., at most 200 C.) by significantly reducing Cu oxide formation. These techniques provide for faster cycle time and entail no extraordinary measures (e.g., forming gas). Such techniques may also enable longer queue (Q) or staging times. One example semiconductor structure generally includes a semiconductor layer, an adhesion layer disposed above the semiconductor layer, an anodic metal layer disposed above the adhesion layer, and a cathodic metal layer disposed above the anodic metal layer. An oxidation potential of the anodic metal layer may be greater than an oxidation potential of the cathodic metal layer. Such a semiconductor structure may be utilized in fabricating IC packages implementing 2.5D or 3D integration.

A method of manufacturing a bonding structure includes (a) providing a substrate, wherein the substrate includes a top surface and at least one bonding pad disposed adjacent to the top surface of the substrate, at least one bonding pad having a sloped surface with a first slope; (b) providing a semiconductor element, wherein the semiconductor element includes at least one pillar, and at least one pillar has a sidewall with a second slope, wherein the absolute value of the first slope is smaller than the absolute value of the second slope; and (c) bonding at least one pillar to a portion of the sloped surface of corresponding ones of the at least one bonding pad.

The present invention includes: preparing a semiconductor substrate having a first main surface and a second main surface that is located on an opposite side of the first main surface; forming a first electrode on the first main surface; forming a solder-bonding metal film (a first solder-bonding metal film) on the first electrode; forming a sacrificial film on the first solder-bonding metal film; grinding the second main surface after forming the sacrificial film; performing heat treatment after the grinding (forming an element structure on the third main surface side); removing the sacrificial film after the performing heat treatment; and solder-bonding the first solder-bonding metal film and a first external electrode.

The present invention includes: preparing a semiconductor substrate having a first main surface and a second main surface that is located on an opposite side of the first main surface; forming a first electrode on the first main surface; forming a solder-bonding metal film (a first solder-bonding metal film) on the first electrode; forming a sacrificial film on the first solder-bonding metal film; grinding the second main surface after forming the sacrificial film; performing heat treatment after the grinding (forming an element structure on the third main surface side); removing the sacrificial film after the performing heat treatment; and solder-bonding the first solder-bonding metal film and a first external electrode.