An electronic device is provided in the present disclosure. The electronic device includes a substrate and a light emitting diode. The light emitting diode is bonded to the substrate through a solder alloy. The solder alloy includes tin and a metal element M, and the metal element M is one of the indium and bismuth. The atomic percentage of tin in the sum of tin and the metal element M ranges from 60% to 90% in the solder alloy.

An electronic device is provided in the present disclosure. The electronic device includes a substrate and a light emitting diode. The light emitting diode is bonded to the substrate through a solder alloy. The solder alloy includes tin and a metal element M, and the metal element M is one of the indium and bismuth. The atomic percentage of tin in the sum of tin and the metal element M ranges from 60% to 90% in the solder alloy.

A bonded assembly includes a first semiconductor die that includes first semiconductor devices, and a first pad-level dielectric layer and embedding first bonding pads; and a second semiconductor die that includes second semiconductor devices, and a second pad-level dielectric layer embedding second bonding pads that includes a respective second pad base portion. Each of the first bonding pads includes a respective first pad base portion and a respective first metal alloy material portion having a higher coefficient of thermal expansion (CTE) than the respective first pad base portion. Each of the second bonding pads is bonded to a respective one of the first bonding pads.

A bonded assembly includes a first semiconductor die that includes first semiconductor devices, and a first pad-level dielectric layer and embedding first bonding pads; and a second semiconductor die that includes second semiconductor devices, and a second pad-level dielectric layer embedding second bonding pads that includes a respective second pad base portion. Each of the first bonding pads includes a respective first pad base portion and a respective first metal alloy material portion having a higher coefficient of thermal expansion (CTE) than the respective first pad base portion. Each of the second bonding pads is bonded to a respective one of the first bonding pads.

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component having a first direct bonding region, wherein the first direct bonding region includes first metal contacts and a first dielectric material between adjacent ones of the first metal contacts; a second microelectronic component having a second direct bonding region and coupled to the first microelectronic component by the first and second direct bonding regions, wherein the second direct bonding region includes second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, and wherein individual first metal contacts in the first direct bonding region are coupled to respective individual second metal contacts in the second direct bonding region; and a void between an individual first metal contact and a respective individual second metal contact.

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component having a first direct bonding region, wherein the first direct bonding region includes first metal contacts and a first dielectric material between adjacent ones of the first metal contacts; a second microelectronic component having a second direct bonding region and coupled to the first microelectronic component by the first and second direct bonding regions, wherein the second direct bonding region includes second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, and wherein individual first metal contacts in the first direct bonding region are coupled to respective individual second metal contacts in the second direct bonding region; and a void between an individual first metal contact and a respective individual second metal contact.

A semiconductor die is disclosed. The semiconductor die includes a semiconductor body, a metallization over part of the semiconductor body and including a noble metal at a top surface of the metallization, a bondwire having a foot bonded to the top surface of the metallization, and a sealing material covering the foot of the bondwire, the top surface of the metallization, and one or more areas outside the top surface of the metallization where oxide and/or hydroxide-groups would be present if exposed to air. The sealing material adheres to the foot of the bondwire and the one or more areas outside the top surface of the metallization where the oxide and/or hydroxide-groups would be present if exposed to air.

A semiconductor die is disclosed. The semiconductor die includes a semiconductor body, a metallization over part of the semiconductor body and including a noble metal at a top surface of the metallization, a bondwire having a foot bonded to the top surface of the metallization, and a sealing material covering the foot of the bondwire, the top surface of the metallization, and one or more areas outside the top surface of the metallization where oxide and/or hydroxide-groups would be present if exposed to air. The sealing material adheres to the foot of the bondwire and the one or more areas outside the top surface of the metallization where the oxide and/or hydroxide-groups would be present if exposed to air.

A semiconductor device includes a chip that includes a mounting surface, a non-mounting surface, and a side wall connecting the mounting surface and the non-mounting surface and has an eaves portion protruding further outward than the mounting surface at the side wall and a metal layer that covers the mounting surface.

A semiconductor device includes a chip that includes a mounting surface, a non-mounting surface, and a side wall connecting the mounting surface and the non-mounting surface and has an eaves portion protruding further outward than the mounting surface at the side wall and a metal layer that covers the mounting surface.