A semiconductor package includes a semiconductor substrate, a conductive pad on the semiconductor substrate, a redistribution line conductor, a coating insulator, and an aluminum oxide layer. The redistribution line conductor is electrically connected to the conductive pad. The coating insulator covers the redistribution line conductor and partially exposes the redistribution line conductor. The aluminum oxide layer is provided below the coating insulator and extends along a top surface of the redistribution line conductor, and the aluminum oxide layer is in contact with the redistribution line conductor.

A semiconductor package includes a semiconductor substrate, a conductive pad on the semiconductor substrate, a redistribution line conductor, a coating insulator, and an aluminum oxide layer. The redistribution line conductor is electrically connected to the conductive pad. The coating insulator covers the redistribution line conductor and partially exposes the redistribution line conductor. The aluminum oxide layer is provided below the coating insulator and extends along a top surface of the redistribution line conductor, and the aluminum oxide layer is in contact with the redistribution line conductor.

Disclosed herein are lids for integrated circuit (IC) packages with solder thermal interface materials (STIMs), as well as related methods and devices. For example, in some embodiments, an IC package may include a STIM between a die of the IC package and a lid of the IC package. The lid of the IC package may include nickel, the IC package may include an intermetallic compound (IMC) between the STIM and the nickel, and the lid may include an intermediate material between the nickel and the IMC.

Disclosed herein are lids for integrated circuit (IC) packages with solder thermal interface materials (STIMs), as well as related methods and devices. For example, in some embodiments, an IC package may include a STIM between a die of the IC package and a lid of the IC package. The lid of the IC package may include nickel, the IC package may include an intermetallic compound (IMC) between the STIM and the nickel, and the lid may include an intermediate material between the nickel and the IMC.

A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness. A barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.

A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness. A barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.

Semiconductor devices and electronics packaging methods include integrated circuit chips having redundant signal bond pads along with signal bond pads connected to the same signal port for non-destructive testing of the integrated circuit chips prior to packaging. Electrical testing is made via the redundant signal bond after which qualified integrated circuit chips can be attached to a pristine and bumped final interposer or printed circuit board to provide increased reliability to the assembled electronic package.

Semiconductor devices and electronics packaging methods include integrated circuit chips having redundant signal bond pads along with signal bond pads connected to the same signal port for non-destructive testing of the integrated circuit chips prior to packaging. Electrical testing is made via the redundant signal bond after which qualified integrated circuit chips can be attached to a pristine and bumped final interposer or printed circuit board to provide increased reliability to the assembled electronic package.

Embodiments are directed to a method of forming a semiconductor chip package and resulting structures having an annular PSPI region formed under a BLM pad. An annular region is formed under a barrier layer metallurgy (BLM) pad. The annular region includes a photosensitive polyimide (PSPI). A conductive pedestal is formed on a surface of the BLM pad and a solder bump is formed on a surface of the conductive pedestal. The annular PSPI region reduces wafer warpage and ULK peeling stress.

Embodiments are directed to a method of forming a semiconductor chip package and resulting structures having an annular PSPI region formed under a BLM pad. An annular region is formed under a barrier layer metallurgy (BLM) pad. The annular region includes a photosensitive polyimide (PSPI). A conductive pedestal is formed on a surface of the BLM pad and a solder bump is formed on a surface of the conductive pedestal. The annular PSPI region reduces wafer warpage and ULK peeling stress.